ETC SFH4110

GaAs-IR-Lumineszenzdiode (Mini Sidelooker)
GaAs Infrared Emitter (Mini Sidelooker)
SFH 4110
Wesentliche Merkmale
Features
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Wellenlänge der Strahlung 950 nm
Enger Abstrahlwinkel
Hohe Strahlstärke
Geringe Außenabmessungen
Gehäusegleich mit Fototransistor SFH 3100 F
Hoher Koppelfaktor in Lichtschranken in
Verbindung mit SFH 3100 F
• Hohe Zuverlässigkeit
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Anwendungen
Applications
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Peak wavelength of 950 nm
Narrow half angle
High radiant intensity
Small outline dimensions
Same package as phototransistor SFH 3100 F
High coupling factor in light barriers with
SFH 3100 F
• High reliability
Sender für Lichtschranken
Bandende Erkennung (z.B. Videorecorder)
Datenübertragung
Positionsüberwachung
Barcode-Leser
„Messen/Steuern/Regeln“
Münzzähler
Emitter in photointerrupter
Tape end detection (VCR e.g.)
Data transmission
Position sensing
Barcode reader
For control and drive circuits
Coin counters
Typ
Type
Bestellnummer
Ordering Code
Gehäuse
Package
SFH 4110
Q62702-P5072
Klares Miniatur-Kunststoffgehäuse, seitliche Abstrahlung,
Anschlüsse im 2,54-mm Raster,
Kathodenkennzeichnung: kurzer Anschluß
Clear miniature plastic package, sidelooker, solder tabs
2.54-mm (1/10”), cathode marking: short lead
2001-02-22
1
SFH 4110
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg
– 40 … + 85
°C
Sperrspannung
Reverse voltage
VR
3
V
Durchlaßstrom
Forward current
IF (DC)
60
mA
Stoßstrom, tp = 10 µs, D = 0
Surge current
IFSM
1
A
Verlustleistung
Power dissipation
Ptot
100
mW
Wärmewiderstand Sperrschicht - Umgebung
Thermal resistance junction - ambient
RthJA
280
K/W
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
λpeak
950
nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
∆λ
55
nm
Abstrahlwinkel
Half angle
ϕ
±9
Grad
deg.
Aktive Chipfläche
Active chip area
A
0.0625
mm2
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area
L×B
L×W
0.25 × 0.25
mm
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 20 mA, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from
90% to 10%, IF = 20 mA, RL = 50 Ω
tr, tf
450/360
ns
Kapazität,
Capacitance
VR = 0 V, f = 1 MHz
Co
16
pF
Kennwerte (TA = 25 °C)
Characteristics
2001-02-22
2
SFH 4110
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Durchlaßspannung,
Forward voltage
IF = 20 mA, tp = 20 ms
VF
1.2 (≤ 1.4)
V
Sperrstrom,
Reverse current
VR = 3 V
IR
0.01 (≤ 1.0)
µA
Gesamtstrahlungsfluß,
Total radiant flux
IF = 20 mA, tp = 20 ms
Φe
2
mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 20 mA
Temperature coefficient of Ie or Φe,
IF = 20 mA
TCI
– 0.55
%/K
Temperaturkoeffizient von VF, IF = 20 mA
Temperature coefficient of VF, IF = 20 mA
TCV
– 1.8
mV/K
Temperaturkoeffizient von λ, IF = 20 mA
Temperature coefficient of λ, IF = 20 mA
TCλ
+ 0.3
nm/K
Bezeichnung
Parameter
Symbol
Werte
Values
Einheit
Unit
Strahlstärke1)
Radiant intensity1)
IF = 20 mA, tp = 20 ms
Ie min
2.5
mW/sr
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
1)
Sonderselektion auf Anfrage.
1)
Special bin selection on request.
2001-02-22
3
SFH 4110
Relative Spectral Emission
Irel = f (λ)
Ιe
%
Ι rel
Max. Permissible Forward Current
IF = f (T A )
Single pulse, tp = 20 µs
OHR01938
100
Ie
= f (IF)
Ie 100 mA
Radiant Intensity
OHF00369
10 1
OHF00372
90
Ι F mA
Ι e (100 mA)
80
70
10 0
R thJA = 280 K/W
60
60
50
10 -1
40
40
30
10 -2
20
20
10
0
880
920
960
nm
λ
1000
1060
Forward Current
IF = f (VF), Single pulse, tp = 20 µs
ΙF
10 -3 -1
10
10 1
0
10 2 mA 10 3
ΙF
0
20
40
60
80
C
TA
120
Radiation Characteristics
Ιrel = f (ϕ)
40˚
OHF00367
10 4
mA
10 0
30˚
20˚
10˚
ϕ
0˚
OHF00371
1.0
50˚
10 3
0.8
10 2
60˚
10
1
10
0
10
0.6
70˚
0.4
80˚
0.2
-1
0
90˚
10 -2
0
0.5
1
1.5
2
2.5
3
V
VF
4
100˚
1.0
0.8
0.6
Permissible Pulse Power ,
Duty cycle D = parameter, TA = 25 °C
OHF00373
10 1
ΙF A
10 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
10 -1
10 -2 -5
10 10 -4 10 -3 10 -2 10 -1 10 0
2001-02-22
s
tP
10 2
4
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
SFH 4110
3.1 (0.122)
2.9 (0.114)
R 0.9 (0.035)
R 0.7 (0.028)
1.04 (0.041)
2.2 (0.087)
2.0 (0.079)
3.9 (0.154)
1.6 (0.063)
1.4 (0.055)
1.3 (0.051)
1.1 (0.043)
0.84 (0.033)
0.64 (0.025)
4.1 (0.161)
0.84 (0.033)
3.0 (0.118)
2.8 (0.110)
1.04 (0.041)
0.84 (0.033)
17.77 (0.700)
17.27 (0.680)
0.9 (0.035)
0.7 (0.028)
0.3 (0.012)
16.5 (0.650)
16.0 (0.630)
60˚
0.5 (0.020)
1.42 (0.056)
1.22 (0.048)
0.6 (0.024)
0.4 (0.016)
2.54 (0.100)
Emitter/
Cathode
0.5 (0.020) x 45˚
Maßzeichnung
Package Outlines
GEOY6976
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2001-02-22
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