GaAlAs-Lumineszenzdiode (660 nm) GaAlAs Light Emitting Diode (660 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4860 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • Hermetisch dichtes Metallgehäuse • • • • • Anwendungen Applications • Lichtschranken für Gleich- und Wechsellichtbetrieb • IR-Gerätefernsteuerungen • Sensorik • Lichtgitter • • • • Fabricated in a liquid phase epitaxy process Cathode is electrically connected to the case High reliability Matches all Si-Photodetectors Hermetically sealed package Photointerrupters IR remote control Sensor technology Light curtains Typ Type Bestellnummer Ordering Code Gehäuse Package SFH 4860 Q62702P5053 18 A3 DIN 41876 (TO-18), Bodenplatte, Plankappe, Anschlüsse im 2.54-mm-Raster (1/10’’) Anodenkennzeichnung: Nase am Gehäuseboden 18 A3 DIN 870 (TO-18), flat glass cap, lead spacing 2.54 mm (1/10’’) anode making: projection at package bottom 2007-12-07 1 SFH 4860 Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 100 °C Sperrschichttemperatur Junction temperature Tj 125 °C Sperrspannung Reverse voltage VR 3 V Durchlassstrom Forward current IF 50 mA Stoßstrom, tp = 10 µs, D = 0 Surge current IFSM 1 A Verlustleistung Power dissipation Ptot 140 mW Wärmewiderstand Thermal resistance RthJA RthJC 450 160 K/W K/W Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength at peak emission IF = 50 mA λpeak 660 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 50 mA ∆λ 25 nm Abstrahlwinkel Half angle ϕ ± 50 Grad deg. Aktive Chipfläche Active chip area A 0.106 mm2 Abmessungen der aktiven Chipfläche Dimension of the active chip area L×B L×W 0.325 × 0.325 mm² Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 50 mA, RL = 50 Ω Switching times, Ιe from 10% to 90% and from 90% to10%, IF = 50 mA, RL = 50 Ω tr , tf 100 ns Kennwerte (TA = 25 °C) Characteristics 2007-12-07 2 SFH 4860 Kennwerte (TA = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kapazität, VR = 0 V, f = 1 MHz Capacitance Co 25 pF Durchlassspannung, IF = 50 mA, tp = 20 ms Forward voltage VF 2(≤ 2.8) V Sperrstrom, VR = 3V Reverse current IR 0.01 (≤ 10) µA Gesamtstrahlungsfluss, IF = 50mA, tp = 20 ms Total radiant flux Φe 3 mW Temperaturkoeffizient von Ie bzw. Φe, IF = 50 mA Temperature coefficient of Ie or Φe, IF = 50 mA TCI – 0.4 %/K Temperaturkoeffizient von VF, IF = 50 mA Temperature coefficient of VF, IF = 50 mA TCV –3 mV/K Temperaturkoeffizient von λ, IF = 50 mA Temperature coefficient of λ, IF = 50 mA TCλ + 0.16 nm/K Symbol Werte Values Einheit Unit Ie min Ie typ ≥ 0.63 1.3 mW/sr mW/sr Ie typ 15 mW/sr Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Strahlstärke Radiant intensity IF = 50 mA, tp = 20 ms Strahlstärke Radiant intensity IF = 1 A, tp = 100 µs 2007-12-07 3 SFH 4860 Relative Spectral Emission Irel = f (λ) Radiant Intensity = f (IF) Single pulse, tp = 20 µs OHR01869 100 Ιe Ie 50 mA Ι rel % 10 2 OHR01870 OHR00390 120 Ι F mA Ιe Ι e 50 mA 80 Max. Permissible Forward Current IF = f (TC), RthJC = 160 K/W 100 10 1 80 60 10 0 60 40 40 10 -1 20 20 10 -2 0 600 650 700 nm λ Forward Current IF = f (VF), single pulse, tp = 20 µs ΙF 10 2 mA ΙF 10 3 OHR01872 10 4 mA tP D= 10 3 2 10 1 Permissible Pulse Handling Capability IF = f (τ), TA = 25 °C, duty cycle D = parameter OHR01871 10 3 mA ΙF 10 10 0 750 0.1 tP T ΙF 0 20 40 60 80 100 ˚C 130 TA Max. Permissible Forward Current IF = f (TA), RthJA = 450 K/W OHR00391 120 Ι F mA 100 T D= 0.005 0.01 0.02 0.05 80 60 0.2 10 2 0.5 10 1 0 40 DC 20 10 0 0 1 2007-12-07 2 3 4 5 6 V 7 VF 10 1 10 -5 10 -4 10 -3 10 -2 10 -1 s tP 4 10 1 0 0 20 40 60 80 100 ˚C 130 TA SFH 4860 Maßzeichnung Package Outlines Chip position ø0.45 Cathode 1.1 .9 0 ø4.8 ø4.6 2.54 mm spacing 1 0.9 .1 (2.7) 14.5 12.5 4.05 3.45 Flat glass cap ø2.54 Maße in mm (inch) / Dimensions in mm (inch). Radiation Characteristics Ιrel = f (ϕ) 40 30 20 10 ϕ 0 OHR00389 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2007-12-07 0.8 0.6 0.4 0 20 40 60 80 5 100 120 5.5 5.2 GMO06983 SFH 4860 Lötbedingungen Soldering Conditions Wellenlöten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskühlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-12-07 6 Mouser Electronics Related Product Links 720-SFH4860 - Osram Opto Semiconductor SFH 4860