GaAs-IR-Lumineszenzdiode (Mini Sidelooker) GaAs Infrared Emitter (Mini Sidelooker) Lead (Pb) Free Product - RoHS Compliant SFH 4110 Wesentliche Merkmale Features • • • • • • Wellenlänge der Strahlung 950 nm Enger Abstrahlwinkel Hohe Strahlstärke Geringe Außenabmessungen Gehäusegleich mit Fototransistor SFH 3100 F Hoher Koppelfaktor in Lichtschranken in Verbindung mit SFH 3100 F • Hohe Zuverlässigkeit • • • • • • Anwendungen Applications • • • • • • • • • • • • • • Peak wavelength of 950 nm Narrow half angle High radiant intensity Small outline dimensions Same package as phototransistor SFH 3100 F High coupling factor in light barriers with SFH 3100 F • High reliability Sender für Lichtschranken Bandende Erkennung (z.B. Videorecorder) Datenübertragung Positionsüberwachung Barcode-Leser „Messen/Steuern/Regeln“ Münzzähler Emitter in photointerrupter Tape end detection (VCR e.g.) Data transmission Position sensing Barcode reader For control and drive circuits Coin counters Typ Type Bestellnummer Ordering Code Strahlstärke 1) (IF = 20mA, tp = 20 ms) Radiant intensity 1) Ie (mW/sr) SFH 4110 Q62702P5072 > 2.5 1) gemessen bei einem Raumwinkel Ω = 0.01sr measured at a solid angle of Ω = 0.01 sr 2007-04-03 1 SFH 4110 Grenzwerte (TA = 25 °C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 85 °C Sperrspannung Reverse voltage VR 5 V Durchlaßstrom Forward current IF (DC) 60 mA Stoßstrom, tp = 10 μs, D = 0 Surge current IFSM 1 A Verlustleistung Power dissipation Ptot 100 mW Wärmewiderstand Sperrschicht - Umgebung Thermal resistance junction - ambient RthJA 280 K/W Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength at peak emission λpeak 950 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax Δλ 55 nm Abstrahlwinkel Half angle ϕ ±9 Grad deg. Aktive Chipfläche Active chip area A 0.0625 mm2 Abmessungen der aktiven Chipfläche Dimensions of the active chip area L×B L×W 0.25 × 0.25 mm² Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 20 mA, RL = 50 Ω Switching times, Ιe from 10% to 90% and from 90% to 10%, IF = 20 mA, RL = 50 Ω tr , tf 450/360 ns Kapazität, Capacitance VR = 0 V, f = 1 MHz Co 16 pF Kennwerte (TA = 25 °C) Characteristics 2007-04-03 2 SFH 4110 Kennwerte (TA = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Durchlaßspannung, Forward voltage IF = 20 mA, tp = 20 ms VF 1.2 (≤ 1.4) V Sperrstrom, Reverse current VR = 3 V IR 0.01 (≤ 1.0) μA Gesamtstrahlungsfluß, Total radiant flux IF = 20 mA, tp = 20 ms Φe 2 mW Temperaturkoeffizient von Ie bzw. Φe, IF = 20 mA Temperature coefficient of Ie or Φe, IF = 20 mA TCI – 0.55 %/K Temperaturkoeffizient von VF, IF = 20 mA Temperature coefficient of VF, IF = 20 mA TCV – 1.8 mV/K Temperaturkoeffizient von λ, IF = 20 mA Temperature coefficient of λ, IF = 20 mA TCλ + 0.3 nm/K Bezeichnung Parameter Symbol Werte Values Einheit Unit Strahlstärke1) Radiant intensity1) IF = 20 mA, tp = 20 ms Ie min 2.5 mW/sr Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr 1) Sonderselektion auf Anfrage. 1) Special bin selection on request. 2007-04-03 3 SFH 4110 Relative Spectral Emission Irel = f (λ) Ιe % Ι rel Max. Permissible Forward Current IF = f (TA) Single pulse, tp = 20 μs OHR01938 100 Ie = f (IF) Ie 100 mA Radiant Intensity OHF00369 10 1 OHF00372 90 Ι F mA Ι e (100 mA) 80 70 10 0 R thJA = 280 K/W 60 60 50 10 -1 40 40 30 10 -2 20 20 10 0 880 920 960 nm λ 1000 1060 Forward Current IF = f (VF), Single pulse, tp = 20 μs ΙF 10 -3 -1 10 10 1 40˚ 30˚ 20˚ 10˚ ϕ 10 3 0 10 2 mA 10 3 ΙF 0 20 40 60 80 C TA 120 Radiation Characteristics Ιrel = f (ϕ) OHF00367 10 4 mA 10 0 0˚ OHF00371 1.0 50˚ 0.8 10 2 60˚ 10 0.6 1 70˚ 0.4 80˚ 0.2 10 0 10 -1 0 90˚ 10 -2 0 0.5 1 1.5 2 2.5 3 V VF 4 100˚ 1.0 0.8 0.6 Permissible Pulse Power , Duty cycle D = parameter, TA = 25 °C OHF00373 10 1 ΙF A 10 0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 10 -1 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 2007-04-03 s tP 10 2 4 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ SFH 4110 1.6 (0.063) 1.4 (0.055) 1.3 (0.051) 1.1 (0.043) 5 0.84 (0.033) 0.64 (0.025) 3.9 (0.154) 0.84 (0.033) 4.1 (0.161) 1.04 (0.041) 0.84 (0.033) 17.77 (0.700) 17.27 (0.680) 2.2 (0.087) 2.0 (0.079) 3.0 (0.118) 2.8 (0.110) Maße in mm (inch) / Dimensions in mm (inch). 2007-04-03 3.1 (0.122) 2.9 (0.114) R 0.9 (0.035) R 0.7 (0.028) 1.04 (0.041) 0.9 (0.035) 0.7 (0.028) 0.3 (0.012) 16.5 (0.650) 16.0 (0.630) 60˚ 0.5 (0.020) 1.42 (0.056) 1.22 (0.048) 0.6 (0.024) 0.4 (0.016) 2.54 (0.100) Emitter/ Cathode 0.5 (0.020) x 45˚ Maßzeichnung Package Outlines GEOY6976 SFH 4110 Wellenlöten (TTW) Recommended Solder Pad TTW Soldering 4.8 (0.189) Empfohlenes Lötpaddesign 4 (0.157) OHLPY985 2007-04-03 6 SFH 4110 Lötbedingungen Soldering Conditions Wellenlöten (TTW) (nach CECC 00802) TTW Soldering (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskühlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-03 7 Mouser Electronics Related Product Links 720-SFH4110 - Osram Opto Semiconductor SFH 4110