LM4755 Stereo 11W Audio Power Amplifier with Mute General Description The LM4755 is a stereo audio amplifier capable of delivering 11W per channel of continuous average output power to a 4Ω load or 7W per channel into 8Ω using a single 24V supply at 10% THD+N. The internal mute circuit and pre-set gain resistors provide for a very economical design solution. Output power specifications at both 20V and 24V supplies and low external component count offer high value to consumer electronic manufacturers for stereo TV and compact stereo applications. The LM4755 is specifically designed for single supply operation. n PO at 10% THD @ 1 kHz into 8Ω bridged TO-263 pkg. at VCC = 12V 5W(typ) Features n n n n n n n Drives 4Ω and 8Ω loads Integrated mute function Internal Gain Resistors Minimal external components needed Single supply operation Internal current limiting and thermal protection Compact 9-lead TO-220 package Key Specifications Applications n Output power at 10% THD with 1 kHz into 4Ω at VCC = 24V 11W(typ) n Output power at 10% THD with 1 kHz into 8Ω at VCC = 24V 7W(typ) n Closed loop gain 34 dB(typ) n PO at 10% THD @ 1 kHz into 4Ω single-ended TO-263 pkg. at VCC = 12V 2.5W(typ) n Stereos TVs n Compact stereos n Mini component stereos Typical Application Connection Diagrams Plastic Package DS100059-2 Package Description Top View Order Number LM4755T Package Number TA09A DS100059-36 DS100059-1 FIGURE 1. Typical Audio Amplifier Application Circuit © 1999 National Semiconductor Corporation DS100059 Top View Order Number LM4755TS Package Number TS9A www.national.com LM4755 Stereo 11W Audio Power Amplifier with Mute February 1999 Absolute Maximum Ratings (Note 2) T Package (10 seconds) Supply Voltage Temperature Range ± 0.7V Output Current TMIN ≤ TA ≤ TMAX Internally Limited Power Dissipation (Note 3) ESD Susceptability (Note 4) Junction Temperature −40˚C to 150˚C Operating Ratings 40V Input Voltage 250˚C Storage Temperature If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. −40˚C ≤ TA ≤ +85˚C Supply Voltage 9V to 32V 62.5W θJC 2˚C/W 2 kV θJA 76˚C/W 150˚C Soldering Information Electrical Characteristics The following specifications apply to each channel with VCC = 24V, TA = 25˚C unless otherwise specified. LM4755 Symbol ITOTAL PO Parameter Total Quiescent Power Supply Current Output Power (Continuous Average per Channel) Conditions Mute Off Typical (Note 5) Limit Units (Limits) 10 15 mA(max) 7 mA(min) Mute On 7 f = 1 kHz, THD+N = 10%, RL = 8Ω 7 mA f = 1 kHz, THD+N = 10%, RL = 4Ω 11 VS = 20V, RL = 8Ω 4 W VS = 20V, RL = 4Ω 7 W f = 1 kHz, THD+N = 10%, RL = 4Ω VS = 12V, TO-263 Pkg. 2.5 W W 10 W(min) THD Total Harmonic Distortion f = 1 kHz, PO = 1 W/ch, RL = 8Ω 0.08 % VOSW Output Swing PO = 10W, RL = 8Ω 15 V PO = 10W, RL = 4Ω 14 V 55 dB 50 dB XTALK Channel Separation See Apps. Circuit PSRR Power Supply Rejection Ratio See Apps. Circuit f = 1 kHz, VO = 4 Vrms f = 120 Hz, VO = 1 mVrms VODV Differential DC Output Offset Voltage SR Slew Rate 2 RIN Input Impedance 83 kΩ PBW Power Bandwidth 3 dB BW at PO = 2.5W, RL = 8Ω 65 kHz AVCL Closed Loop Gain (Internally Set) RL = 8Ω 34 eIN Noise IHF-A Weighting Filter, RL = 8Ω Output Referred VIN = 0V 0.09 0.4 V/µs 33 dB(min) 35 dB(max) 0.2 IO Output Short Circuit Limit VIN = 0.5V, RL = 2Ω Mute Pin VIL Mute Low Input Voltage Not in Mute Mode VIH Mute High Input Voltage In Mute Mode 2.0 AM Mute Attenuation VMUTE = 5.0V 80 V(max) mVrms 2 A(min) 0.8 V(max) 2.5 V(min) dB Note 1: All voltages are measured with respect to the GND pin (5), unless otherwse specified. Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance. Note 3: For operating at case temperatures above 25˚C, the device must be derated based on a 150˚C maximum junction temperature and a thermal resistance of θJC = 2˚C/W (junction to case). Refer to the section Determining the Maximum Power Dissipation in the Application Information section for more information. Note 4: Human body model, 100 pF discharged through a 1.5 kΩ resistor. www.national.com 2 Electrical Characteristics (Continued) Note 5: Typicals are measured at 25˚C and represent the parametric norm. Note 6: Limits are guaranteed that all parts are tested in production to meet the stated values. Note 7: The TO-263 Package is not recommended for VS > 16V due to impractical heatsinking limitations. DS100059-3 Equivalent Schematic 3 www.national.com Test Circuit DS100059-4 FIGURE 2. Test Circuit www.national.com 4 System Application Circuit DS100059-5 FIGURE 3. Circuit for External Components Description External Components Description Components 1, 2 Function Description CS Provides power supply filtering and bypassing. 3, 4 RSN Works with CSN to stabilize the output stage from high frequency oscillations. 5, 6 CSN Works with RSN to stabilize the output stage from high frequency oscillations. 7 Cb Provides filtering for the internally generated half-supply bias generator. 8, 9 Ci Input AC coupling capacitor which blocks DC voltage at the amplifier’s input terminals. Also creates a high pass filter with fc=1/(2 • π • Rin • Cin). 10, 11 Co Output AC coupling capacitor which blocks DC voltage at the amplifier’s output terminal. Creates a high pass filter with fc=1/(2 • π • Rout • Cout). 12, 13 Ri Voltage control - limits the voltage level allowed to the amplifier’s input terminals. 14 Rm Works with Cm to provide mute function timing. 15 Cm Works with Rm to provide mute function timing. 5 www.national.com Typical Performance Characteristics(Note 5) THD+N vs Output Power THD+N vs Output Power DS100059-12 THD+N vs Output Power DS100059-13 THD+N vs Output Power DS100059-6 THD+N vs Output Power THD+N vs Output Power THD+N vs Output Power THD+N vs Output Power DS100059-14 DS100059-7 DS100059-15 DS100059-8 THD+N vs Output Power DS100059-16 THD+N vs Output Power DS100059-9 www.national.com THD+N vs Output Power THD+N vs Output Power DS100059-10 6 DS100059-17 DS100059-11 Typical Performance Characteristics(Note 5) (Continued) THD+N vs Output Power THD+N vs Output Power DS100059-38 THD+N vs Output Power THD+N vs Output Power DS100059-39 THD+N vs Output Power DS100059-41 THD+N vs Output Power THD+N vs Output Power DS100059-42 THD+N vs Output Power DS100059-44 THD+N vs Output Power DS100059-40 DS100059-43 THD+N vs Output Power DS100059-45 THD+N vs Output Power DS100059-47 THD+N vs Output Power DS100059-48 7 DS100059-46 DS100059-49 www.national.com Typical Performance Characteristics(Note 5) Output Power vs Supply Voltage Output Power vs Supply Voltage DS100059-18 THD+N vs Frequency THD+N vs Frequency Channel Separation DS100059-22 DS100059-24 Power Dissipation vs Output Power DS100059-28 8 DS100059-23 Supply Current vs Supply Voltage DS100059-25 DS100059-27 DS100059-20 Frequency Response PSRR vs Frequency Power Derating Curve Frequency Response DS100059-19 DS100059-21 www.national.com (Continued) DS100059-26 Power Dissipation vs Output Power DS100059-29 Typical Performance Characteristics(Note 5) Power Dissipation vs Output Power (Continued) Power Dissipation vs Output Power DS100059-60 DS100059-61 earlier in the External Components section these capacitors create high-pass filters with their corresponding input/ output impedances. The Typical Application Circuit shown in Figure 1 shows input and output capacitors of 0.1 µF and 1,000 µF respectively. At the input, with an 83 kΩ typical input resistance, the result is a high pass 3 dB point occurring at 19 Hz. There is another high pass filter at 39.8 Hz created with the output load resistance of 4Ω. Careful selection of these components is necessary to ensure that the desired frequency response is obtained. The Frequency Response curves in the Typical Performance Characteristics section show how different output coupling capacitors affect the low frequency roll-off. Application Information The LM4755 contains circuitry to pull down the bias line internally, effectively shutting down the input stage. An external R-C should be used to adjust the timing of the pull-down. If the bias line is pulled down too quickly, currents induced in the internal bias resistors will cause a momentary DC voltage to appear across the inputs of each amplifier’s internal differential pair, resulting in an output DC shift towards Vsupply. An R-C timing circuit should be used to limit the pulldown time such that output “pops” and signal feedthroughs will be minimized. The pull-down timing is a function of a number of factors, including the internal mute circuitry, the voltage used to activate the mute, the bias capacitor, the half-supply voltage, and internal resistances used in the halfsupply generator. Table 1 shows a list of recommended values for the external R-C. OPERATING IN BRIDGE-MODE Though designed for use as a single-ended amplifier, the LM4755 can be used to drive a load differentially (bridgemode). Due to the low pin count of the package, only the non-inverting inputs are available. An inverted signal must be provided to one of the inputs. This can easily be done with the use of an inexpensive op-amp configured as a standard inverting amplifier. An LF353 is a good low-cost choice. Care must be taken, however, for a bridge-mode amplifier must theoretically dissipate four times the power of a single-ended type. The load seen by each amplifier is effectively half that of the actual load being used, thus an amplifier designed to drive a 4Ω load in single-ended mode should drive an 8Ω load when operating in bridge-mode. TABLE 1. Recommended Values for Mute Circuit VMUTE VCC Rm Cm 5V 12V 18 kΩ 10 µF 5V 15V 18 kΩ 10 µF 5V 20V 12 kΩ 10 µF 5V 24V 12 kΩ 10 µF 5V 28V 8.2 kΩ 10 µF 5V 30V 8.2 kΩ 10 µF CAPACITOR SELECTION AND FREQUENCY RESPONSE With the LM4755, as in all single supply amplifiers, AC coupling capacitors are used to isolate the DC voltage present at the inputs (pins 3, 7) and outputs (pins 1, 8). As mentioned 9 www.national.com Application Information (Continued) DS100059-30 FIGURE 4. Bridge-Mode Application DS100059-31 DS100059-37 FIGURE 5. THD+N vs POUT for Bridge-Mode Application require an external signal, the inputs should be terminated to ground with a resistance of 50 kΩ or less on the AC side of the input coupling capacitors. PREVENTING OSCILLATIONS With the integration of the feedback and bias resistors onchip, the LM4755 fits into a very compact package. However, due to the close proximity of the non-inverting input pins to the corresponding output pins, the inputs should be AC terminated at all times. If the inputs are left floating, the amplifier will have a positive feedback path through high impedance coupling, resulting in a high frequency oscillation. In most applications, this termination is typically provided by the previous stage’s source impedance. If the application will www.national.com UNDERVOLTAGE SHUTDOWN If the power supply voltage drops below the minimum operating supply voltage, the internal under-voltage detection circuitry pulls down the half-supply bias line, shutting down the preamp section of the LM4755. Due to the wide operating supply range of the LM4755, the threshold is set to just under 9V. There may be certain applications where a higher 10 Application Information PDMAX = maximum power dissipation of the IC TJ(˚C) = junction temperature of the IC TA(˚C) = ambient temperature θJC(˚C/W) = junction-to-case thermal resistance of the IC θCS(˚C/W) = case-to-heatsink thermal resistance (typically 0.2 to 0.5 ˚C/W) θSA(˚C/W) = thermal resistance of heatsink (Continued) threshold voltage is desired. One example is a design requiring a high operating supply voltage, with large supply and bias capacitors, and there is little or no other circuitry connected to the main power supply rail. In this circuit, when the power is disconnected, the supply and bias capacitors will discharge at a slower rate, possibly resulting in audible output distortion as the decaying voltage begins to clip the output signal. An external circuit may be used to sense for the desired threshold, and pull the bias line (pin 6) to ground to disable the input preamp. Figure 6 shows an example of such a circuit. When the voltage across the zener diode drops below its threshold, current flow into the base of Q1 is interrupted. Q2 then turns on, discharging the bias capacitor. This discharge rate is governed by several factors, including the bias capacitor value, the bias voltage, and the resistor at the emitter of Q2. An equation for approximating the value of the emitter discharge resistor, R, is given below: When determining the proper heatsink, the above equation should be re-written as: θSA ≤ [(TJ–TA) / PDMAX] - θJC–θCS TO-263 HEATSINKING Surface mount applications will be limited by the thermal dissipation properties of printed circuit board area. The TO-263 package is not recommended for surface mount applications with VS > 16V due to limited printed circuit board area. There are TO-263 package enhancements, such as clip-on heatsinks and heatsinks with adhesives, that can be used to improve performance. Standard FR-4 single-sided copper clad will have an approximate Thermal resistance (θSA) ranging from: R = (0.7v) / (Cb • (VCC/2) / 0.1s) Note that this is only a linearized approximation based on a discharge time of 0.1s. The circuit should be evaluated and adjusted for each application. As mentioned earlier in the Built-in Mute Circuit section, when using an external circuit to pull down the bias line, the rate of discharge will have an effect on the turn-off induced distortions. Please refer to the Built-in Mute Circuit section for more information. 1.5 x 1.5 in. sq. 20–27˚C/W (TA=28˚C, Sine wave 2 x 2 in. sq. 16–23˚C/W testing, 1 oz. Copper) The above values for θSA vary widely due to dimensional proportions (i.e. variations in width and length will vary θSA). For audio applications, where peak power levels are short in duration, this part will perform satisfactory with less heatsinking/copper clad area. As with any high power design proper bench testing should be undertaken to assure the design can dissipate the required power. Proper bench testing requires attention to worst case ambient temperature and air flow. At high power dissipation levels the part will show a tendency to increase saturation voltages, thus limiting the undistorted power levels. DETERMINING MAXIMUM POWER DISSIPATION For a single-ended class AB power amplifier, the theoretical maximum power dissipation point is a function of the supply voltage, VS, and the load resistance, RL and is given by the following equation: (single channel) PDMAX (W) = [VS2 / (2 • π2 • RL)] DS100059-32 The above equation is for a single channel class-AB power amplifier. For dual amplifiers such as the LM4755, the equation for calculating the total maximum power dissipated is: FIGURE 6. External Undervoltage Pull-Down (dual channel) PDMAX (W) = 2 • [VS2 / (2 • π2 • RL)] or VS2 / (π2 • RL) (Bridged Outputs) PDMAX (W) = 4[VS2 / (2π2 • RL)] THERMAL CONSIDERATIONS Heat Sinking Proper heatsinking is necessary to ensure that the amplifier will function correctly under all operating conditions. A heatsink that is too small will cause the die to heat excessively and will result in a degraded output signal as the thermal protection circuitry begins to operate. The choice of a heatsink for a given application is dictated by several factors: the maximum power the IC needs to dissipate, the worst-case ambient temperature of the circuit, the junction-to-case thermal resistance, and the maximum junction temperature of the IC. The heat flow approximation equation used in determining the correct heatsink maximum thermal resistance is given below: TJ–TA = PDMAX • (θJC + θCS + θSA) HEATSINK DESIGN EXAMPLE: Determine the system parameters: VS = 24V Operating Supply Voltage RL = 4Ω Minimum Load Impedance TA = 55˚C Worst Case Ambient Temperature Device parameters from the datasheet: TJ = 150˚C where: 11 Maximum Junction Temperature www.national.com Application Information θJC = 2˚C/W PDMAX ≈ 3.7W Calculating PDMAX: PDMAX = VCC2/(π2RL) = (12V) 2/(π2(4Ω)) = 3.65W Calculating Heatsink Thermal Resistance: θSA < [(TJ − TA) / PDMAX] − θJC − θCS θSA < 100˚C/3.7W − 2.0˚C/W − 0.2˚C/W = 24.8˚C/W Therefore the recommendation is to use 2.0 x 2.0 square inch of single-sided copper clad. Example 3: (Bridged Output) Given: TA = 50˚C TJ = 150˚C RL = 8Ω VS = 12V θJC = 2˚C/W (Continued) Junction-to-Case Thermal Resistance Calculations: 2 • PDMAX = 2 • [VS2 / 2 • π2 • RL)] = (24V)2 / (2 • π2 • 4Ω) = 14.6W θSA ≤ [(TJ-TA) / PDMAX] - θJC–θCS = [ (150˚C - 55˚C) / 14.6W] - 2˚C/W–0.2˚C/W = 4.3˚C/W Conclusion: Choose a heatsink with θSA ≤ 4.3˚C/W. TO-263 HEATSINK DESIGN EXAMPLES: Example 1: (Stereo Single-Ended Output) Given: TA = 30˚C TJ = 150˚C RL = 4Ω VS = 12V θJC = 2˚C/W PDMAX from PD vs PO Graph: PDMAX ≈ 3.7W Calculating PDMAX: PDMAX = VCC2/(π2RL) = (12V)2/π2(4Ω)) = 3.65W Calculating Heatsink Thermal Resistance: θSA < TJ − TA / PDMAX − θJC − θCS θSA < 120˚C/3.7W − 2.0˚C/W − 0.2˚C/W = 30.2˚C/W Therefore the recommendation is to use 1.5 x 1.5 square inch of single-sided copper clad. Example 2: (Stereo Single-Ended Output) Given: TA = 50˚C TJ = 150˚C RL = 4Ω VS = 12V θJC = 2˚C/W Calculating PDMAX: PDMAX = 4[VCC2/(2π2RL)] = 4(12V)2/(2π2(8Ω)) = 3.65W Calculating Heatsink Thermal Resistance: θSA < [(TJ − TA) / PDMAX] − θJC − θCS θSA < 100˚C / 3.7W − 2.0˚C/W − 0.2˚C/W = 24.8˚C/W Therefore the recommendation is to use 2.0 x 2.0 square inch of single-sided copper clad. LAYOUT AND GROUND RETURNS Proper PC board layout is essential for good circuit performance. When laying out a PC board for an audio power amplifier, particular attention must be paid to the routing of the output signal ground returns relative to the input signal and bias capacitor grounds. To prevent any ground loops, the ground returns for the output signals should be routed separately and brought together at the supply ground. The input signal grounds and the bias capacitor ground line should also be routed separately. The 0.1 µF high frequency supply bypass capacitor should be placed as close as possible to the IC. PDMAX from PD vs PO Graph: www.national.com 12 Application Information (Continued) PC BOARD LAYOUT-COMPOSITE DS100059-33 13 www.national.com Application Information (Continued) PC BOARD LAYOUT-SILK SCREEN DS100059-34 www.national.com 14 Application Information (Continued) PC BOARD LAYOUT-SOLDER SIDE DS100059-35 15 www.national.com 16 Physical Dimensions inches (millimeters) unless otherwise noted Order Number LM4755T NS Package Number TA9A 17 www.national.com LM4755 Stereo 11W Audio Power Amplifier with Mute Physical Dimensions inches (millimeters) unless otherwise noted (Continued) Order Number LM4755TS NS Package Number TS9A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 2. 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