• MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS CD4765 thru CD4767A and CD4770 thru CD4772A and CD4775 thru CD4777A and CD4780 thru CD4782A • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • 8.5 & 9.1 VOLT NOMINAL ZENER VOLTAGE +5% • ELECTRICALLY EQUIVALENT TO 1N4765 THRU 1N4772A AND 1N4775 THRU 1N4782A SERIES • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW 38 23 MAXIMUM RATINGS 38 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C TYPE NUMBER ZENER VOLTAGE vz @ I ZT ZENER TEST CURRENT I ZT (Note 3) MAXIMUM MAXIMUM VOLTAGE ZENER TEMPERATURE IMPEDANCE STABILITY ZZT ³V ZT MAXIMUM (Note 1) (Note 2) 23 ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed. TEMPERATURE EFFECTIVE RANGE TEMPERATURE COEFFICIENT FIGURE 1 VOLTS mA OHMS mV CD4765 CD4765A CD4766 CD4766A 9.1 9.1 9.1 9.1 0.5 0.5 0.5 0.5 350 350 350 350 68 141 34 70 0 -55 0 -55 to to to to °C + + + + 75 100 75 100 % / °C 0.01 0.01 0.005 0.005 CD4767 CD4767A CD4770 CD4770A 9.1 9.1 9.1 9.1 0.5 0.5 1.0 1.0 350 350 200 200 14 28 68 141 0 -55 0 -55 to to to to + + + + 75 100 75 100 0.002 0.002 0.01 0.01 CD4771 CD4771A CD4772 CD4772A 9.1 9.1 9.1 9.1 1.0 1.0 1.0 1.0 200 200 200 200 34 70 14 28 0 -55 0 -55 to to to to + + + + 75 100 75 100 0.005 0.005 0.002 0.002 CD4775 CD4775A CD4776 CD4776A 8.5 8.5 8.5 8.5 0.5 0.5 0.5 0.5 350 350 350 350 64 132 32 66 0 -55 0 -55 to to to to + + + + 75 100 75 100 0.01 0.01 0.005 0.005 CD4777 CD4777A CD4780 CD4780A 8.5 8.5 8.5 8.5 0.5 0.5 1.0 1.0 350 350 200 200 13 26 64 132 0 -55 0 -55 to to to to + + + + 75 100 75 100 0.002 0.002 0.01 0.01 CD4781 CD4781A CD4782 CD4782A 8.5 8.5 8.5 8.5 1.0 1.0 1.0 1.0 200 200 200 200 32 66 13 26 0 -55 0 -55 to to to to + + + + 75 100 75 100 0.005 0.005 0.002 0.002 DESIGN DATA METALLIZATION: Top: C (Cathode)...................Al A (Anode)............. .........Al Back: ......................................Au AL THICKNESS............25,000 Å Min GOLD THICKNESS... .....4,000 Å Min CHIP THICKNESS............. .....10 Mils CIRCUIT LAYOUT DATA: Backside must be electrically isolated. Backside is not cathode. For Zener operation cathode must be operated positive with respect to anode. NOTE 1 Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current equal to 10% of lZT. NOTE 2 The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the speci½ed mV at any discrete temperature between the established limits, per JEDEC standard No.5. NOTE 3 Zener voltage range is +5% 6 LAKE STREET, LAWRENCE, PHONE (978) 620-2600 WEBSITE: http://www.microsemi.com TOLERANCES: ALL Dimensions + 2 mils M A S S A C H U S E T T S 01841 FAX (978) 689-0803 201 CD4765 thru CD4767A thru CD4770 thru CD4772A and CD4775 thru CD4777A and CD4780 thru CD4782A 1000 ZENER IMPEDANCE ZZT (OHMS) 500 100 50 10 1 2 3 OPERATING CURRENT lZT (mA) FIGURE 2 ZENER IMPEDANCE VS. OPERATING CURRENT CHANGE IN TEMPERATURE COEFFICIENT ( %/°C) +.0015 +.0010 +.0005 0 -.0005 -.0010 -.0015 0.5 1.0 1.5 OPERATING CURRENT lZT (mA) 2.0 FIGURE 3 TYPICAL CHANGE OF TEMPERATURE COEFFICIENT WITH CHANGE IN OPERATING CURRENT 202