SEMIHOW SPGP0565A

SPGP0565A
VER : Preliminary_2
( SEMIHOW POWER SWITCH )
FEATURES
 Variable frequency operation
 Low Start-up Current(Typ.100uA )
 Pulse by Pulse Current Limiting
 Over Current Protection
 Over Voltage Protection (Min. 20)
 Internal Thermal Shutdown Function
APPLICATION
 SMPS for STB, SVR, DVD & DVCD
 SMPS for Printer, Facsimile & Scanner
 Adaptor
 Under Voltage Lockout
 Internal High Voltage Sense FET
 Auto-Restart Mode
 Frequency Modulation for low EMI
 Advanced Burst-Mode Operation
DESCRIPTION
The SemiHow Power Switch product family is specially designed for an off-line SMPS with minimal external components.
The SemiHow Power Switch consists of a high voltage power SenseFET and a current mode PWM IC.
It has a basic platform well suited for the cost effective design in either a flyback converter
INTERNAL BLOCK DIAGRAM
◎ SEMIHOW REV.PLIMILARY” January 2011
SP
PGP0565A-Pre
eliminary
January 2011
Ta=25C, unless otherwise specified
Symbol
VDSS
Parameter
Drain-Source Voltage
Value
Units
650
V
Drain Current
– Continuous (TC = 25℃)
5.0
A
Drain Current
– Continuous ((TC = 100℃))
3.5
A
IDM
Drain Current
– Pulsed
20
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
406
mJ
VCC(MAX)
Maximum Supply voltage
20
V
VFB
Analog Input Voltage Range
-0.3 To VSD
V
PD
Power Dissipation (TC = 25℃)
- Derate above 25℃
93
W
0.74
W/℃
TJ
Operating Junction Temperature
+160
℃
TA
Operating Ambient Temperature
-25 to +85
℃
TSTG
Storage Temperature Range
-55 to +150
℃
ID
(Note 1)
(Note 2)
Notes :
1 Repetitive Rating : Pulse width limited by maximum junction temperature
1.
2. L=30mH, IAS=5.0A , VDD=50V, RG=25, Starting TJ =25C
◎ SEMIHOW REV.PLIMILARY” January 2011
SP
PGP0565A-Pre
eliminary
Absolute Maximum Ratings
Ta=25C, unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
--
1.35
1.69
Ω
650
--
--
V
VDS = 650 V, VGS = 0 V
--
--
50
㎂
VDS = 520 V, TC = 125℃
--
--
200
㎂
--
900
1200
㎊
--
90
120
㎊
--
11
14.5
㎊
--
25
--
㎱
--
25
--
㎱
--
100
--
㎱
--
50
--
㎱
--
18
24
nC
--
4.0
--
nC
--
6.0
--
nC
On Characteristics
Static Drain-Source
On-Resistance
RDS(ON)
VGS = 10 V, ID = 2.5 A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 50 ㎂
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
Tr
Turn-On Rise Time
td(off)
d( ff)
Turn-Off
Turn
Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 325 V, ID = 5.0 A,
RG = 25 Ω
(Note 4,5)
VDS = 325V, ID = 5.0 A,
VGS = 10 V
Gate-Drain Charge
(Note 4,5)
Notes :
1. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
2.
S
1
R
◎ SEMIHOW REV.PLIMILARY” January 2011
SP
PGP0565A-Pre
eliminary
Electrical Characteristics ( SenseFET Part )
Ta=25C, unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
UVLO Section
VSTART
Start Threshold Voltage
VFB = GND
14
15
16
V
VSTOP
St Th
Stop
Threshold
h ld V
Voltage
lt
VFB = GND
84
8.4
9
96
9.6
V
57
64
71
KHz
--
5
10
%
73
77
82
%
Oscillator Section
FOSC
-DMAX
Initial Accuracy
Frequency Change With
Temperature (Note 2)
-25°C  Ta  +85°C
Maximum Duty Cycle
FEEDBACK Section
IFB
Feedback Source Current
Ta=25°C, 0V<Vfb<3V
0.7
0.9
1.1
mA
VSD
Shutdown Feedback Voltage
Vfb>6.5V
5.4
6
6.6
V
Idelay
Shutdown Delay Current
Ta=25°C, 5VVfbVSD
4
5
6
mA
4.8
5
5.2
V
--
0.3
0.6
mV/°C
Max. inductor current
3.2
3.6
4.0
A
VCC 20V
20
--
23
V
140
160
--
°C
Reference Section
VREF
Reference Output Voltage (Note 1) Ta=25°C
Vref/T Temperature Stability (Note 1 , 2)
IOVER
Peak Current Limit
-25°C  Ta  +85°C
Protection Section
VOVP
Over Voltage Protection
TSD
Thermal Shutdown Temperature
(Tj) (Note 1)
--
Protection Section
ISTART
IOP
Start-up Current
VCC = 14V
--
100
170

Operating Supply Current
(Control Part Only)
VCC 20V
--
3
6
mA
Notes :
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
◎ SEMIHOW REV.PLIMILARY” January 2011
SP
PGP0565A-Pre
eliminary
Electrical Characteristics ( Control Part )
(SPGP0565A)
10
VGS
1
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
ID, Draiin Current [A]
ID, Drain Current [A]
10
0
10
o
150 C
1
o
25 C
o
-25 C
* Notes :
1. 300us Pulse Test
o
2. TC = 25 C
0
* Notes :
1. VDS= 30V
2. 300us Pulse Test
0.1
1
10
10
2
4
8
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
10
IDR, Reverse
e Drain Current [A]
3
VGS = 10V
2
1
VGS = 20V
1
0.1
o
o
25 C
150 C
* Notes :
1. VGS= 0V
o
 Note : TJ = 25 C
0
0
1
2
3
4
5
2. 300us Pulse Test
6
0.01
0.4
0.6
Crss = Cgd
1000
800
Coss
600
* Note ;
1. VGS = 0 V
400
2. f = 1 MHz
Crss
200
VDS = 130V
VGS, Gate-S
Source Voltage [V]
Ciss
1.2
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
1200
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1400
0.8
VSD, Source-Drain Voltage [V]
ID, Drain Current [A]
Capacittances [pF]
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
RDDS(ON) [],
Drain-Sourc
ce On-Resistance
6
10
VDS = 325V
VDS = 520V
8
6
4
2
* Note : ID = 5.0A
0
-1
10
0
10
1
10
0
0
4
8
12
16
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
20
◎ SEMIHOW REV.PLIMILARY” January 2011
SP
PGP0565A-Pre
eliminary
Typical Characteristics ( SenseFET Part )
(SPGP0565A)
2.5
RDS(ON), (Normalized)
Drain-Sourc
ce On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
 Note :
0.9
1. VGS = 0 V
2. ID = 250A
0.8
-100
-50
0
50
100
2.0
1.5
1.0
0.5
 Note :
1. VGS = 10 V
2. ID = 2.5 A
150
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
2
5
10
Operation in This Area
is Limited by R DS(on)
100 s
4
1
ID, Drain
n Current [A]
1 ms
10 ms
100 ms
0
10
DC
-1
10
* Notes :
o
1. TC = 25 C
3
2
1
o
2. TJ = 150 C
3. Single Pulse
-2
0
1
10
2
10
0
25
3
10
10
50
75
125
150
o
Figure 9. Maximum Safe Operating Area
10
100
TC, Case Temperature [ C]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs Case Temperature
p
0
(t), Therrmal Response
D = 0 .5
10
10
0 .2
-1
0 .1
* N o te s :
o
1 . Z  J C ( t ) = 1 . 3 4 C /W M a x .
0 .0 5
3 . T J M - T C = P D M * Z  J C ( t)
2 . D u ty F a c to r , D = t 1 /t 2
PDM
0 .0 2
0 .0 1
JC
10
Z
ID, Drain Current [A]
10
-2
10
t1
s in g le p u ls e
-5
10
-4
10
-3
10
-2
10
t2
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.PLIMILARY” January 2011
SP
PGP0565A-Pre
eliminary
Typical Characteristics ( SenseFET Part ) (continued)
(continued)
(These characteristic graphs are normalized at Ta=25C)
1.20
1.20
1.15
1.15
1.10
1.10
1.05
Fosc
1.05
Ifb
1.00
1.00
0.95
0.95
0.90
0.90
0.85
0.85
0.80
-25
0
25
50
75
100
125
0.80
-25
150
Figure 1. Operating Frequency
1.20
2.0
1.15
1.8
1.10
1.6
75
100
125
150
1.2
0.95
1.0
0.90
0.8
0.85
0.6
0
25
50
75
100
125
150
Figure 3.
3 Operating Supply Current
0.4
-25
1.20
1.15
1.15
1.10
1.10
1.05
1.05
Vstart1.00
Vstop 1.00
0.95
0.95
0.90
0.90
0.85
0.85
0
25
50
75
100
125
150
Figure 5. Start Threshold Voltage
0
25
50
75
100
125
150
125
150
Figure 4
4. Start up Current
1.20
0.80
-25
50
1.4
Istart
1.00
0.80
-25
25
Figure 2. Feedback Source Current
1.05
Iop
0
0.80
-25
0
25
50
75
100
Figure 6. Stop Threshold Voltage
1.20
1.15
1.10
1.05
Vovp
1.00
0.95
0.90
0.85
0.80
-25
0
25
50
75
100
125
150
Figure 7. Over Voltage Protection
◎ SEMIHOW REV.PLIMILARY” January 2011
SP
PGP0565A-Pre
eliminary
Typical Performance Characteristics ( Control Part )
SP
PGP0565A-Pre
eliminary
Package Dimension
◎ SEMIHOW REV.PLIMILARY” January 2011