SEMIHOW HTP20-600

HTP20-600
HTP20-600
600V 20A TRIAC
VDRM
= 600 V
IT(RMS) = 20A
FEATURES
2.T2
Symbol
‰ Repetitive Peak Off-State Voltage: 600V
‰ R.M.S On-state Current (IT(RMS)=20A)
‰ High Commutation dv/dt
3.Gate
1.T1
1. T1
2. T2
3. Gate
General Description
The TRIAC HTP20-600 is suitable for AC switching application, phase
control application such as heater control, motor control, lighting control,
and static switching relay.
Absolute Maximum Ratings
(Ta=25℃)
Parameter
Symbol
Value
Units
VDRM
Repetitive Peak Off-State Voltage
600
V
IT(RMS)
R.M.S On-State Current (Ta = 90℃)
20
A
50Hz
170
A
60Hz
190
ITSM
Surge On-State Current
(One Cycle, 50/60Hz, Peak, Non Repetitive)
VGM
Peak Gate Voltage
10
V
IGM
Peak Gate Current
2
A
PGM
Peak Gate Power Dissipation
5
W
TSTG
Storage Temperature Range
-40 to +125
℃
Operating Temperature
-40 to +125
℃
Tj
◎ SEMIHOW REV.1.0 Jan 2006
Symbol
Parameter
(Ta=25℃)
Test Conditions
Min
Typ
Max
Units
IGT
Gate Trigger Current
VD=6V, RL=10Ω
1+, 1-, 3-
30
mA
VGT
Gate Trigger Voltage
VD=6V, RL=10Ω
1+, 1-, 3-
1.5
V
VGD
(dv/dt)c
IH
Non Trigger Gate
Tj =125℃, VD=1/2VDRM
Voltage
Critical Rate of Rise of
Tj =125℃, VD=2/3VDRM
Off-State Voltage at
(di/dt)c=-10A/ms
Communication
0.2
V
8.0
V/uS
Holding Current
25
VD=VDRM, Single Phase,
IDRM
Repetitive Peak OffState Current
VTM
Peak On-State Voltage IT=6A, Inst, Measurement
Half Wave, Tj=125℃
mA
2.0
mA
1.4
V
Max
Units
1.4
℃/W
Thermal Characteristics
Symbol
Parameter
Test Conditions
RTH(J-C)
Thermal Resistance
Junction to Case
Min
Typ
◎ SEMIHOW REV.1.0 Jan 2006
HTP20-600
Electrical Characteristics
HTP20-600
Performance Curves
Fig 1. Gate Characteristics
Fig 2.On-State Voltage
On-state Current (A)
Gate Voltage (V)
101
100
102
101
100
0.5
10-1
101
102
103
1.0
1.5
2.0
2.5
3.0
3.5
On-state Voltage (V)
Gate Current (mA)
Fig 4. On State Current
vs. Maximum Power Dissipation
Fig 3. Gate Trigger Voltage
vs. Junction Temperature
20
10
Power Dissipation (W)
VGT(t℃)
VGT(25℃)
18
1
16
14
12
10
8
6
4
2
0
0.1
-50
0
50
100
0
150
8
12
16
20
24
Fig 6. Surge On-State Current
Rating (Non-Repetitive)
Fig 5. On State Current
vs. Allowable Case Temperature
130
240
Surge On-State Current (A)
Allowable Case Temp (℃)
4
RMS On-State Current (A)
Junction Temperature (℃)
120
110
100
90
80
70
60
0
4
8
12
16
RMS On-State Current (A)
20
24
200
180
120
80
40
0
100
101
102
Time (Cycles)
◎ SEMIHOW REV.1.0 Jan 2006
10
Transient Thermal
Impedance (℃/W)
10
IGT(t℃)
IGT(25℃)
HTP20-600
Fig8. Transient Thermal
Impedance
Fig 7. Gate Trigger Current
vs. Junction Temperature
1
1
0.1
0.1
-50
0
50
100
150
10-2
10-1
100
101
102
Junction Temperature (℃)
Fig 7. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
A
RG
A
6V
RG
6V
V
V
Test Procedure I
Test Procedure II
10Ω
A
RG
6V
V
Test Procedure III
◎ SEMIHOW REV.1.0 Jan 2006
HTP20-600
Package Dimension
HTP20-600
(TO-220)
◎ SEMIHOW REV.1.0 Jan 2006