SEMIKRON SKM400GAL12V

SKM400GAL12V
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
1200
V
Tc = 25 °C
612
A
Tc = 80 °C
467
A
400
A
ICnom
ICRM
SEMITRANS® 3
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 720 V
VGE ≤ 20 V
VCES ≤ 1200 V
1200
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Tc = 25 °C
440
A
Tc = 80 °C
329
A
400
A
Tj = 125 °C
Inverse diode
SKM400GAL12V
IF
Tj = 175 °C
IFnom
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
•
•
•
•
Electronic welders
DC/DC – converter
Brake chopper
Switched reluctance motor
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
IFRM
IFRM = 3xIFnom
1200
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1980
A
-40 ... 175
°C
Tc = 25 °C
440
A
Tc = 80 °C
329
A
400
A
Tj
Freewheeling diode
IF
Tj = 175 °C
IFnom
IFRM
IFRM = 3xIFnom
1200
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1980
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
500
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
rCE
Conditions
IC = 400 A
VGE = 15 V
chiplevel
VGE = 15 V
min.
typ.
max.
Unit
Tj = 25 °C
1.75
2.20
V
Tj = 150 °C
2.20
2.50
V
Tj = 25 °C
0.94
1.04
V
Tj = 150 °C
0.88
0.98
V
Tj = 25 °C
2.02
2.9
m
3.30
3.80
m
6
6.5
V
0.1
0.3
mA
Tj = 150 °C
VGE(th)
VGE=VCE, IC = 16 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
QG
VCE = 25 V
VGE = 0 V
Tj = 25 °C
5.5
Tj = 150 °C
mA
f = 1 MHz
24.04
nF
f = 1 MHz
2.36
nF
f = 1 MHz
2.356
nF
4420
nC
1.9

VGE = - 8 V...+ 15 V
RGint
GAL
© by SEMIKRON
Rev. 3 – 23.03.2011
1
SKM400GAL12V
Characteristics
Symbol
td(on)
tr
Eon
td(off)
tf
Eoff
SEMITRANS® 3
SKM400GAL12V
Rth(j-c)
Conditions
VCC = 600 V
IC = 400 A
VGE = ±15 V
RG on = 3 
RG off = 3 
di/dton = 9800 A/µs
di/dtoff = 5000 A/µs
du/dtoff = 7600 V/
µs
per IGBT
Inverse diode
VF = VEC IF = 400 A
VGE = 0 V
chip
VF0
rF
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
•
•
•
•
Electronic welders
DC/DC – converter
Brake chopper
Switched reluctance motor
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
IRRM
Qrr
Err
Rth(j-c)
rF
Qrr
Err
Rth(j-c)
typ.
max.
Unit
350
ns
Tj = 150 °C
60
ns
Tj = 150 °C
39
mJ
Tj = 150 °C
700
ns
Tj = 150 °C
65
ns
Tj = 150 °C
42
mJ
0.072
K/W
Tj = 25 °C
2.20
2.52
V
Tj = 150 °C
2.15
2.47
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
2.3
2.5
m
3.1
3.4
m
Tj = 150 °C
IF = 400 A
Tj = 150 °C
di/dtoff = 9500 A/µs T = 150 °C
j
VGE = ±15 V
T
j = 150 °C
VCC = 600 V
per diode
Freewheeling diode
VF = VEC IF = 400 A
VGE = 0 V
chip
VF0
IRRM
min.
Tj = 150 °C
450
A
58
µC
26
mJ
0.14
K/W
Tj = 25 °C
2.20
2.52
V
Tj = 150 °C
2.15
2.47
V
V
Tj = 25 °C
1.3
1.5
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
2.3
2.5
m
3.1
3.4
m
Tj = 150 °C
IF = 400 A
Tj = 150 °C
di/dtoff = 8800 A/µs T = 150 °C
j
VGE = ±15 V
T
j = 150 °C
VCC = 600 V
per Diode
450
A
68
µC
30.5
mJ
0.14
K/W
Module
LCE
RCC'+EE'
15
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
20
nH
TC = 25 °C
0.25
m
TC = 125 °C
0.5
m
0.02
to terminals M6
0.038
K/W
3
5
Nm
2.5
5
Nm
Nm
w
325
g
GAL
2
Rev. 3 – 23.03.2011
© by SEMIKRON
SKM400GAL12V
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 3 – 23.03.2011
3
SKM400GAL12V
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 3 – 23.03.2011
© by SEMIKRON
SKM400GAL12V
SEMITRANS 3
GAL
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 3 – 23.03.2011
5