SEMiX151GAL12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMiX® 1s Trench IGBT Modules ICRM = 3xICnom 450 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 150 A VGES tpsc VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C Tj Inverse diode IF SEMiX151GAL12E4s Tj = 175 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 IFRM IFRM = 3xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 900 A -40 ... 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 150 A Tj Freewheeling diode IF Tj = 175 °C IFnom Typical Applications* IFRM IFRM = 3xIFnom 450 A • AC inverter drives • UPS • Electronic Welding IFSM tp = 10 ms, sin 180°, Tj = 25 °C 900 A -40 ... 175 °C Tj Module Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 1.8 2.05 V Tj = 150 °C 2.2 2.4 V VCE0 Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE Tj = 25 °C 6.7 7.7 mΩ 10.0 10.7 mΩ 5.8 6.5 V 0.1 0.3 mA IGBT VCE(sat) IC = 150 A VGE = 15 V chiplevel VGE = 15 V VGE(th) VGE=VCE, IC = 6 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 9.3 nF f = 1 MHz 0.58 nF f = 1 MHz 0.51 nF QG VGE = - 8 V...+ 15 V 850 nC RGint Tj = 25 °C 5.00 Ω GAL © by SEMIKRON Rev. 0 – 05.05.2010 1 SEMiX151GAL12E4s Characteristics Symbol Conditions td(on) VCC = 600 V IC = 150 A tr Eon Trench IGBT Modules SEMiX151GAL12E4s Features IRRM • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Rth(j-c) Typical Applications* • AC inverter drives • UPS • Electronic Welding Qrr Err 16.6 mJ 468 ns 91 ns 18.4 mJ rF IRRM Qrr Err Rth(j-c) ns 0.19 K/W Tj = 25 °C 2.1 2.46 V Tj = 150 °C 2.1 2.4 V V Tj = 25 °C 1.1 1.3 1.5 Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 4.3 5.6 6.4 mΩ 6.7 7.8 8.5 mΩ Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 3400 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 150 A VGE = 0 V chip VF0 Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C ns Tj = 150 °C per IGBT rF Unit 42 Rth(j-c) Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0 max. Tj = 150 °C Eoff tf typ. 204 RG on = 1 Ω Tj = 150 °C RG off = 1 Ω di/dton = 3900 A/µs Tj = 150 °C di/dtoff = 2000 A/µs Tj = 150 °C td(off) SEMiX® 1s min. Tj = 150 °C 115 A 23 µC 8.9 mJ 0.31 K/W Tj = 25 °C 2.1 2.5 V Tj = 150 °C 2.1 2.4 V V Tj = 25 °C 1.1 1.3 1.5 Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 4.3 5.6 6.4 mΩ 7.8 8.5 mΩ Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 3400 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per diode 6.7 115 A 23 µC 8.9 mJ 0.31 K/W Module LCE RCC'+EE' 16 res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) TC = 25 °C 0.7 mΩ TC = 125 °C 1 mΩ 0.075 to terminals (M6) Mt nH K/W 3 5 Nm 2.5 5 Nm Nm w 145 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K GAL 2 Rev. 0 – 05.05.2010 © by SEMIKRON SEMiX151GAL12E4s Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 05.05.2010 3 SEMiX151GAL12E4s Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 – 05.05.2010 © by SEMIKRON SEMiX151GAL12E4s SEMiX 1s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 0 – 05.05.2010 5