SEMIKRON SEMIX151GAL12E4S_10

SEMiX151GAL12E4s
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 175 °C
1200
V
Tc = 25 °C
232
A
Tc = 80 °C
179
A
150
A
ICnom
ICRM
SEMiX® 1s
Trench IGBT Modules
ICRM = 3xICnom
450
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Tc = 25 °C
189
A
Tc = 80 °C
141
A
150
A
VGES
tpsc
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj = 150 °C
Tj
Inverse diode
IF
SEMiX151GAL12E4s
Tj = 175 °C
IFnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
IFRM
IFRM = 3xIFnom
450
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
-40 ... 175
°C
Tc = 25 °C
189
A
Tc = 80 °C
141
A
150
A
Tj
Freewheeling diode
IF
Tj = 175 °C
IFnom
Typical Applications*
IFRM
IFRM = 3xIFnom
450
A
• AC inverter drives
• UPS
• Electronic Welding
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
900
A
-40 ... 175
°C
Tj
Module
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
600
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
1.8
2.05
V
Tj = 150 °C
2.2
2.4
V
VCE0
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
rCE
Tj = 25 °C
6.7
7.7
mΩ
10.0
10.7
mΩ
5.8
6.5
V
0.1
0.3
mA
IGBT
VCE(sat)
IC = 150 A
VGE = 15 V
chiplevel
VGE = 15 V
VGE(th)
VGE=VCE, IC = 6 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 150 °C
5
Tj = 25 °C
Tj = 150 °C
mA
f = 1 MHz
9.3
nF
f = 1 MHz
0.58
nF
f = 1 MHz
0.51
nF
QG
VGE = - 8 V...+ 15 V
850
nC
RGint
Tj = 25 °C
5.00
Ω
GAL
© by SEMIKRON
Rev. 0 – 05.05.2010
1
SEMiX151GAL12E4s
Characteristics
Symbol
Conditions
td(on)
VCC = 600 V
IC = 150 A
tr
Eon
Trench IGBT Modules
SEMiX151GAL12E4s
Features
IRRM
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Rth(j-c)
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Qrr
Err
16.6
mJ
468
ns
91
ns
18.4
mJ
rF
IRRM
Qrr
Err
Rth(j-c)
ns
0.19
K/W
Tj = 25 °C
2.1
2.46
V
Tj = 150 °C
2.1
2.4
V
V
Tj = 25 °C
1.1
1.3
1.5
Tj = 150 °C
0.7
0.9
1.1
V
Tj = 25 °C
4.3
5.6
6.4
mΩ
6.7
7.8
8.5
mΩ
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 3400 A/µs T = 150 °C
j
VGE = -15 V
Tj = 150 °C
VCC = 600 V
per diode
Freewheeling diode
VF = VEC IF = 150 A
VGE = 0 V
chip
VF0
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
ns
Tj = 150 °C
per IGBT
rF
Unit
42
Rth(j-c)
Inverse diode
VF = VEC IF = 150 A
VGE = 0 V
chip
VF0
max.
Tj = 150 °C
Eoff
tf
typ.
204
RG on = 1 Ω
Tj = 150 °C
RG off = 1 Ω
di/dton = 3900 A/µs Tj = 150 °C
di/dtoff = 2000 A/µs
Tj = 150 °C
td(off)
SEMiX® 1s
min.
Tj = 150 °C
115
A
23
µC
8.9
mJ
0.31
K/W
Tj = 25 °C
2.1
2.5
V
Tj = 150 °C
2.1
2.4
V
V
Tj = 25 °C
1.1
1.3
1.5
Tj = 150 °C
0.7
0.9
1.1
V
Tj = 25 °C
4.3
5.6
6.4
mΩ
7.8
8.5
mΩ
Tj = 150 °C
IF = 150 A
Tj = 150 °C
di/dtoff = 3400 A/µs T = 150 °C
j
VGE = -15 V
Tj = 150 °C
VCC = 600 V
per diode
6.7
115
A
23
µC
8.9
mJ
0.31
K/W
Module
LCE
RCC'+EE'
16
res., terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
TC = 25 °C
0.7
mΩ
TC = 125 °C
1
mΩ
0.075
to terminals (M6)
Mt
nH
K/W
3
5
Nm
2.5
5
Nm
Nm
w
145
g
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
493 ± 5%
Ω
3550
±2%
K
GAL
2
Rev. 0 – 05.05.2010
© by SEMIKRON
SEMiX151GAL12E4s
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 05.05.2010
3
SEMiX151GAL12E4s
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 0 – 05.05.2010
© by SEMIKRON
SEMiX151GAL12E4s
SEMiX 1s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 05.05.2010
5