SHENZHENFREESCALE IRFU3303

IRFR/U3303
HEXFET® Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
Surface Mount (IRFR3303)
Straight Lead (IRFU3033)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
D
VDSS = 30V
RDS(on) = 0.031Ω
G
ID = 33A…
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
I-P a k
TO -2 5 1 A A
D -P a k
T O -2 52 A A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
33…
21…
120
57
0.45
± 20
95
18
5.7
5.0
-55 to + 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
1 / 10
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
–––
2.2
50
110
°C/W
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IRFR/U3303
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
30
–––
–––
2.0
9.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.032
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
99
16
28
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
750
400
140
V(BR)DSS
∆V(BR)DSS/∆TJ
I GSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.031
Ω
VGS = 10V, ID = 18A „
4.0
V
VDS = VGS, I D = 250µA
–––
S
VDS = 25V, ID = 18A
25
VDS = 30V, VGS = 0V
µA
250
VDS = 24V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
29
ID = 18A
7.3
nC VDS = 24V
13
VGS = 10V, See Fig. 6 and 13 „
–––
VDD = 15V
–––
I D = 18A
ns
–––
RG = 13Ω
–––
RD = 0.8Ω, See Fig. 10 „
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact†
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
t on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 33…
showing the
A
G
integral reverse
––– ––– 120
p-n junction diode.
S
––– ––– 1.3
V
TJ = 25°C, IS = 18A, VGS = 0V „
––– 53
80
ns
TJ = 25°C, IF = 18A
––– 94 140
nC
di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 590µH
… Caculated continuous current based on maximum allowable junction
RG = 25Ω, IAS = 18A. (See Figure 12)
temperature; Package limitation current = 20A.
ƒ ISD ≤ 18A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, † This is applied for I-PAK, L of D-PAK is measured between
S
TJ ≤ 150°C
lead and center of die contact
2 / 10
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IRFR/U3303
I D , Drain-to-Source Current (A)
TOP
100
BOTTOM
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
I D , Drain-to-Source Current (A)
1000
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
1
4.5V
0.1
10
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
4.5V
1
0.1
100
1
20µs PULSE WIDTH
TJ = 150 °C
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 150 ° C
10
TJ = 25 ° C
1
V DS = 15V
25V
20µs PULSE WIDTH
0.1
4
5
6
7
8
9
10
ID = 30A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( ° C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3 / 10
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IRFR/U3303
VGS
Ciss
Crss
Coss
1200
= 0V,
f = 1MHz
= Cgs + Cgd , Cds SHORTED
= Cgd
= Cds + Cgd
C, Capacitance (pF)
1000
Ciss
800
Coss
600
400
Crss
200
20
VGS, Gate-to-Source Voltage (V)
1400
10
VDS = 24V
VDS = 15V
16
12
8
4
0
1
ID = 18A
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
VDS , Drain-to-Source Voltage (V)
10
15
20
25
30
Q G, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
ISD , Reverse Drain Current (A)
5
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 25 ° C
I D , Drain Current (A)
100
TJ = 150 ° C
10
1
0.1
0.0
100us
10
1ms
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
1.0
2.0
3.0
4.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4 / 10
10us
100
5.0
1
1
10ms
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFR/U3303
35
LIMITED BY PACKAGE
VGS
30
ID , Drain Current (A)
RD
VDS
D.U.T.
RG
+
25
- VDD
10V
20
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
Fig 10a. Switching Time Test Circuit
10
VDS
5
90%
0
25
50
75
100
T C , Case Temperature
125
150
( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response
(Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.01
0.00001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 / 10
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IRFR/U3303
200
D.U.T.
RG
+
V
- DD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS , Single Pulse Avalanche Energy (mJ)
L
VDS
ID
8.0A
11A
18A
TOP
BOTTOM
150
100
50
0
25
50
75
100
125
Starting T J, Junction Temperature
tp
150
( °C)
VDD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6 / 10
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFR/U3303
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* V GS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
7 / 10
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IRFR/U3303
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
-A1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
1.02 (.040)
1.64 (.025)
1
2
10.42 (.410)
9.40 (.370)
LEA D AS SIG NME NT S
1 - G AT E
3
0.51 (.020)
MIN.
-B 1.52 (.060)
1.15 (.045)
4 - DRA IN
3X
2X
1.14 (.045)
0.76 (.030)
2 - DRA IN
3 - S OUR CE
0.89 (.035)
0.64 (.025)
0.25 ( .010)
0.58 (.023)
0.46 (.018)
M A M B
NOT ES:
2.28 (.090)
1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982.
2 CO NTRO LLING DIMENS ION : INCH.
3 CO NFO RMS T O JEDE C O UTLINE TO -252AA .
4.57 (.180)
4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP ,
SO LDER DIP MA X. +0.16 (.006).
Part Marking Information
TO-252AA (D-Pak)
E X A M P LE : T H IS IS A N IR F R 120
W IT H A S S E MB L Y
LOT C OD E 9U 1P
IN T E R N A T IO N A L
R E CT IF IE R
A
IR F R
12 0
9U
A S S E MB L Y
L O T C OD E
8 / 10
F IR S T P O R T ION
OF P A R T N U MB E R
1P
S E C O N D P O R T ION
OF PART NUMBER
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IRFR/U3303
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
2.38 (.094)
2.19 (.086)
-A-
0.58 (.023)
0.46 (.018)
1.27 ( .050)
0.88 ( .035)
5.46 (.215)
5.21 (.205)
LEAD AS SIG NMENT S
4
6.45 (.245)
5.68 (.224)
6.22 ( .245)
5.97 ( .235)
1.52 ( .060)
1.15 ( .045)
1
2
1 - G AT E
2 - DRA IN
3 - S OURCE
4 - DRA IN
3
-B -
NOT ES :
1 DIME NSIO NING & T OLE RANCING P ER A NSI Y14.5M, 1982.
2.28 (.090)
1.91 (.075)
2 CO NTRO LLIN G DIMENS ION : INCH.
3 CO NFO RMS TO J EDE C O UT LINE TO -252AA .
9.65 (.380)
8.89 (.350)
4 DIME NSIO NS SHOW N A RE BEF O RE SO LDER DIP ,
SO LDER DIP MA X. +0.16 (.006).
3X
1.14 (.045)
0.76 (.030)
2.28 (.090)
3X
1.14 (.045)
0.89 (.035)
0.89 (.035)
0.64 (.025)
0.25 (.010)
2X
M A M B
0.58 (.023)
0.46 (.018)
Part Marking Information
TO-251AA (I-Pak)
E X A M P LE : TH IS IS A N IR F U1 20
W IT H A S S E M B LY
LO T C O D E 9U 1P
IN TE RN A T IO N A L
R E C T IF IE R
A S S E M B LY
LO T C O D E
9 / 10
IR F U
120
9U 1 P
F IR S T P O RT IO N
O F P A R T N UM B E R
S E C O N D P O R T ION
OF PART NUMBER
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IRFR/U3303
Tape & Reel Information
TO-252AA
TR
TRR
16 .3 ( .64 1 )
15 .7 ( .61 9 )
1 2 .1 ( .4 76 )
1 1 .9 ( .4 69 )
F E E D D IR E C TIO N
TRL
1 6 .3 ( .6 4 1 )
1 5 .7 ( .6 1 9 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E E D D IR E C TIO N
N O T ES :
1 . C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ).
3 . O U T L IN E C O N FO R M S TO E IA -48 1 & E IA -5 4 1 .
1 3 IN C H
16 m m
NO T ES :
1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 .
10 / 10
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