SHENZHENFREESCALE IRL2203NS

IRL2203NS/L
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
100% RG Tested
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 7.0mΩ
G
ID = 116A‡
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL2203NL) is available for low-profile applications.
D2Pak
IRL2203NS
TO-262
IRL2203NL
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
Parameter
Max
Continuous Drain Current, VGS @ 10V
116
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
IDM
Units
i
A
82
c
400
PD @TA = 25°C
Power Dissipation
PD @TC = 25°C Power Dissipation
3.8
W
180
W
W/°C
V
VGS
IAR
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
1.2
± 16
60
A
EAR
Repetitive Avalanche Energy
18
mJ
5.0
V/ns
dv/dt
c
c
Peak Diode Recovery dv/dt e
Operating Junction and
TJ
TSTG
-55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case)
Thermal Resistance
Symbol
1 / 10
k
Parameter
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB mount, steady state)
jk
Typ
Max
–––
0.85
–––
40
Units
°C/W
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IRL2203NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min
Typ
Max Units
30
–––
–––
Breakdown Voltage Temp. Coefficient
–––
0.029
–––
Static Drain-to-Source On-Resistance
–––
–––
7.0
VGS = 10V, ID = 60A
–––
–––
10
VGS = 4.5V, ID = 48A
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ
RDS(on)
V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
f
f
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
gfs
Forward Transconductance
73
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
25
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Qg
Total Gate Charge
–––
–––
60
Qgs
Gate-to-Source Charge
–––
–––
14
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
33
RG
Gate Resistance
0.2
–––
3.0
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 15V
tr
Rise Time
–––
160
–––
ID = 60A
td(off)
Turn-Off Delay Time
–––
23
–––
RG = 1.8Ω
tf
Fall Time
–––
66
–––
VGS = 4.5V, See Fig. 10
LD
Internal Drain Inductance
–––
4.5
–––
IGSS
µA
nA
VDS = VGS, ID = 250µA
VDS = 25V, I D = 60A
f
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
ID = 60A
nC
VDS = 24V
VGS = 4.5V, See Fig. 6 and 13
Ω
Between lead,
Nh
6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Input Capacitance
–––
3290
–––
Coss
Output Capacitance
–––
1270
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
170
––– 1320
–––
290
mJ
IAS = 60A, L = 0.16mH
EAS
d
g
h
f
and center of die contact
VGS = 0V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Symbol
Parameter
Typ
Max Units
i
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
–––
–––
400
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.2
V
trr
Reverse Recovery Time
–––
56
84
ns
Qrr
Reverse Recovery Charge
–––
110
170
nC
ton
Forward Turn-On Time
c
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 0.16mH RG = 25Ω,
IAS = 60A, VGS=10V (See Figure 12)
ƒ ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2 / 10
Min
IS
–––
–––
116
Conditions
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 60A, VGS = 0V
f
TJ = 25°C, IF = 60A
di/dt = 100A/µs
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C
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IRL2203NS/L
1000
1000
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
10
2.7V
100
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
2.7V
10
1
0.1
100
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 175 ° C
100
V DS = 15V
20µs PULSE WIDTH
4.0
5.0
6.0
Fig 3. Typical Transfer Characteristics
3 / 10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
3.0
10
100
Fig 2. Typical Output Characteristics
1000
VGS , Gate-to-Source Voltage (V)
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
2.0
20µs PULSE WIDTH
TJ = 175 ° C
7.0
ID = 100A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRL2203NS/L
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
5000
4000
Ciss
3000
Coss
2000
1000
15
VGS , Gate-to-Source Voltage (V)
6000
ID = 60A
VDS = 24V
VDS = 15V
12
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
1
10
0
100
0
20
VDS , Drain-to-Source Voltage (V)
1000
80
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
TJ = 175 ° C
10
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4 / 10
40
QG , Total Gate Charge (nC)
2.4
100
100µsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10msec
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRL2203NS/L
120
VDS
LIMITED BY PACKAGE
VGS
ID , Drain Current (A)
100
RD
D.U.T.
RG
+
-VDD
80
V GS
60
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.01
0.00001
0.10
0.05
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 / 10
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15V
L
VDS
D.U.T
RG
IAS
VGS
20V
tp
DRIVER
+
V
- DD
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
IRL2203NS/L
600
ID
24A
42A
60A
TOP
500
BOTTOM
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6 / 10
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRL2203NS/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+

RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
7 / 10
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IRL2203NS/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
10 / 10
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
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