SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES N-Channel 20V/4.0A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=60mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=75mΩ@VGS=1.8V P-Channel -20V/-3.4A,RDS(ON)= 85mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=110mΩ@VGS=-2.5V -20V/-1.7A,RDS(ON)=130mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOT–23- 6P package design PIN CONFIGURATION( TSOT-23– 6P ) PART MARKING 2013/12/25 Ver.1 Page 1 SPC6604 N & P Pair Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G1 Gate 1 2 S2 Source 2 3 G2 4 D2 Gate 2 Drain 2 5 S1 6 D1 Source 1 Drain1 ORDERING INFORMATION Part Number Package Part SPC6604TS26RGB TSOT-23- 6P Marking 04YW ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPC6604TS26RGB : Tape Reel ; Pb – Free ; Halogen -Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Typical Parameter Symbol Unit N-Channel P-Channel Drain-Source Voltage VDSS 20 -20 V Gate –Source Voltage VGSS ±12 ±12 V 4.0 3.4 -3.4 -2.8 -2.4 -2.1 IDM 10 IS 1.6 -8 -1.4 Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient 2013/12/25 Ver.1 1.15 PD T ≤ 10sec Steady State RθJA ℃ ℃ -55/150 -55/150 50 90 A A W 0.75 TJ TSTG A 52 90 ℃/W Page 2 SPC6604 N & P Pair Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS(th) Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance RDS(on) Forward Transconductance gfs Diode Forward Voltage VSD VGS=0V,ID= 250uA VGS=0V,ID=-250uA VDS=VGS,ID=250uA VDS=VGS,ID=-250uA VDS=0V,VGS=±12V VDS=0V,VGS=±12V VDS= 16V,VGS=0V VDS=-16V,VGS=0V VDS= 16V,VGS=0V TJ=55℃ VDS=-16V,VGS=0V TJ=55℃ VDS≥ 4.5V,VGS = 10V VDS≤ -4.5V,VGS =-10V VGS=4.5V,ID=4.0A VGS=-4.5V,ID=-3.4A VGS=2.5V,ID=3.4A VGS=-2.5V,ID=-2.4A VGS=1.8V,ID=2.8A VGS=-1.8V,ID=-1.7A VDS=5V,ID=-3.6A VDS=-5V,ID=-2.8A IS=1.6A,VGS=0V IS=-1.5A,VGS=0V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 0.4 -0.35 1.0 -0.8 ±100 ±100 1 -1 10 -10 6 -6 V nA uA A 0.040 0.068 0.046 0.090 0.056 0.113 10 6 0.8 -0.8 0.050 0.085 0.060 0.110 0.075 0.130 4.8 4.8 1.0 1.0 1.0 1.0 8 10 12 13 30 18 12 15 8 8 Ω S 1.2 -1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd td(on) Turn-On Time tr td(off) Turn-Off Time tf 2013/12/25 Ver.1 N-Channel VDS=6V,VGS=4.5V, ID≡2.8A P-Channel VDS=-6V,VGS=-4.5V ,ID≡-2.8A N-Channel VDD=6V,RL=6Ω ,ID≡1.0A VGEN=4.5V ,RG=6Ω P-Channel VDD=-6V,RL=6Ω ,ID≡-1.0A VGEN=-4.5V ,RG=6Ω N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch nC 14 16 18 23 35 25 16 20 nS Page 3 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( N-Channel ) 2013/12/25 Ver.1 Page 4 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( N-Channel ) 2013/12/25 Ver.1 Page 5 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( N-Channel ) 2013/12/25 Ver.1 Page 6 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( P-Channel ) 2013/12/25 Ver.1 Page 7 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( P-Channel ) 2013/12/25 Ver.1 Page 8 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( P-Channel ) 2013/12/25 Ver.1 Page 9 SPC6604 N & P Pair Enhancement Mode MOSFET TSOP- 6P PACKAGE OUTLINE 2013/12/25 Ver.1 Page 10 SPC6604 N & P Pair Enhancement Mode MOSFET 2013/12/25 Ver.1 Page 11 SPC6604 N & P Pair Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2013/12/25 Ver.1 Page 12