SYNC-POWER SPP4435S8RG

SPP4435
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP4435 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹
-30V/-9.2A,RDS(ON)= 25mΩ@VGS=- 10V
‹
-30V/-7.0A,RDS(ON)= 35mΩ@VGS=-4.5V
‹
Super high density cell design for extremely low
RDS (ON)
‹
Exceptional on-resistance and maximum DC
current capability
‹
SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2008/12/01
Ver.2
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SPP4435
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
S
Source
2
S
Source
3
S
Source
4
G
5
D
Gate
Drain
6
D
Drain
7
D
Drain
8
D
Drain
ORDERING INFORMATION
Part Number
Package
Part
Marking
SPP4435S8RG
SOP- 8P
SPP4435
SPP4435S8RGB
SOP- 8P
SPP4435
※ SPP4435S8RG : 13” Tape Reel ; Pb – Free
※ SPP4435S8RGB : 13”Tape Reel ; Pb – Free; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-30
V
Gate –Source Voltage
VGSS
±20
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
ID
-10.0
-7.0
A
IDM
-50
A
IS
-2.3
A
PD
2.8
1.8
W
TJ
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
70
℃/W
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SPP4435
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
VDS= -5V,VGS =-4.5V
Forward Transconductance
gfs
Diode Forward Voltage
VSD
IS=-2.3A,VGS =0V
RDS(on)
-1.0
-3.0
VDS=0V,VGS=±20V
VDS=-24V,VGS=0V
VDS=-24V,VGS=0V
TJ=85℃
VGS=-10V,ID=-9.2A
VGS=-4.5V,ID=-7.0A
VDS=-10V,ID=-9.0A
Drain-Source On-Resistance
-30
±100
-1
-5
-40
V
nA
uA
A
0.022
0.030
24
0.025
0.035
-0.8
-1.2
16
24
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Time
Turn-Off Time
2008/12/01
Ver.2
VDS=-15V,VGS=-10V
ID= -9.0A
4.5
VDS=-15V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
nC
2.3
VDD=-15V,RL=15Ω
ID≡-1.0A,VGEN=-10V
RG=6Ω
1650
pF
350
235
16
30
17
30
65
110
35
80
nS
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SPP4435
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP4435
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP4435
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPP4435
P-Channel Enhancement Mode MOSFET
SOP- 8 PACKAGE OUTLINE
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Ver.2
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SPP4435
P-Channel Enhancement Mode MOSFET
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SYNC Power Corporation
9F-5, No.3-2, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
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2008/12/01
Ver.2
Page 8