SYNC-POWER SPP9434

SPP9434
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP9434 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹
-20V/-7.2 A,RDS(ON)= 40mΩ@VGS=-4.5V
‹
-20V/-5.2 A,RDS(ON)= 52mΩ@VGS=-2.5V
‹
-20V/-3.6 A,RDS(ON)= 62mΩ@VGS=-1.8V
‹
Super high density cell design for extremely low
RDS (ON)
‹
Exceptional on-resistance and maximum DC
current capability
‹
SOP-8P package design
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2008/10/05 Ver.2
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SPP9434
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
S
Source
2
S
Source
3
S
Source
4
G
5
D
Gate
Drain
6
D
Drain
7
D
Drain
8
D
Drain
ORDERING INFORMATION
Part Number
Package
Part
Marking
SPP9434S8RG
SOP- 8P
SPP9434
SPP9434S8RGB
SOP- 8P
SPP9434
※ SPP9434S8RG : 13” Tape Reel ; Pb – Free
※ SPP9434S8RGB : 13” Tape Reel ; Pb – Free ; Halogen - Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-20
V
Gate –Source Voltage
VGSS
±12
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
ID
-7.6
-5.4
A
IDM
-30
A
IS
-2.3
A
PD
2.8
1.8
W
TJ
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
70
℃/W
2008/10/05 Ver.2
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SPP9434
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
-0.35
-0.9
VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55℃
VDS≦-5V,VGS=-4.5V
VGS=- 4.5V,ID=-7.2A
RDS(on) VGS=- 2.5V,ID=-5.2A
VGS=- 1.8V,ID=-3.6A
gfs
VDS=-5.0V,ID=-6.2A
VSD
-20
IS=-2.5A,VGS=0V
±100
-1
-10
-10
V
nA
uA
A
0.030
0.040
0.050
14
0.040
0.052
0.062
-0.8
-1.2
20
25
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
120
td(on)
20
30
40
65
90
120
70
90
Turn-On Time
Turn-Off Time
2008/10/05 Ver.2
tr
td(off)
tf
VDS=-10V,VGS=-4.5V
ID≡-6.4A
nC
4.5
8.0
VDS=-10V,VGS=0V
f=1MHz
VDD=-10V,RL=6Ω
ID≡-1.0A,VGEN=-4.5V
RG=6Ω
700
pF
160
ns
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SPP9434
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2008/10/05 Ver.2
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SPP9434
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2008/10/05 Ver.2
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SPP9434
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2008/10/05 Ver.2
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SPP9434
P-Channel Enhancement Mode MOSFET
SOP- 8 PACKAGE OUTLINE
2008/10/05 Ver.2
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SPP9434
P-Channel Enhancement Mode MOSFET
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mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
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SYNC Power Corporation
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NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
©http://www.syncpower.com
2008/10/05 Ver.2
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