TYSEMI 2SA1979UF

SMD Type
Product specification
2SA1979UF
Features
Large collector current.
Suitable for low-Voltage operation because of its low saturation voltage.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-40
V
Collector-emitter voltage
VCEO
-32
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-500
mA
Collector dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=-100ìA, IE=0
-40
V
Collector-emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
-32
V
Emitter-base breakdown voltage
-5
BVEBO
IE=-10ìA, IC=0
Collector cutoff current
ICBO
VCB=-40V, IE=0
-0.1
ìA
Emitter cutoff current
IEBO
VEB=-5V, IC=0
-0.1
ìA
hFE
VCE=-1V, IC=-100mA
DC current transfer ratio
V
70
240
VCE(sat) IC=-100mA, IB=-10mA
Collector-emitter saturation voltage
Transition frequency
fT
Output capacitance
Cob
-0.25
V
VCE=-6V, IC=-20mA
200
MHz
VCB=-6V, IE=0, f=1MHz
7.5
pF
hFE Classification
A
Marking
Rank
O
Y
hFE
70 140
120 240
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4008-318-123
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