Transistors IC SMD Type Product specification 2SD1963 Features Low saturation voltage. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current IC 3 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 50 Collector-emitter breakdown voltage BVCEO IC=1mA 20 V Emitter-base breakdown voltage BVEBO IE=50ìA 6 V Collector cutoff current ICBO VCB=40V Emitter cutoff current IEBO VEB=5V DC current transfer ratio hFE VCE=2V, IC=0.5A Collector-emitter saturation voltage VCE(sat) IC=1.5 A, IB=0.15A Output capacitance fT Transition frequency Cob V 180 0.5 ìA 0.5 ìA 560 0.25 0.45 V VCE=6V, IE= -50mA, f=100MHz 150 MHz VCB=20V, IE=0A, f=1MHz 35 pF hFE Classification DG Marking Rank R S hFE 180 390 270 560 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1