Product specification 2SA1981SF SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Hfe:.hFE=100 to 320 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Collector dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons , IE=0 Min Typ Max -35 Unit Collector-base breakdown voltage BVCBO IC=-500ìA V Collector-emitter breakdown voltage BVCEO IC=-1mA , IB=0 -30 V Emitter-base breakdown voltage BVEBO IE=-50ìA, IC=0 -5 V Collector cutoff current ICBO VCB=-35V, IE=0 Emitter cutoff current IEBO VEB=-5V, IC=0 DC current transfer ratio hFE VCE=-1V, IC=-100mA 100 Transition frequency fT Output capacitance Cob ìA -0.1 ìA 320 VCE(sat) IC/IB=-500mA/-20mA Collector-emitter saturation voltage -0.1 -0.5 V VCE=-5V, IE=10mA, 120 MHz VCB=-10V, IE=0, f=1MHz 19 pF hFE Classification EA Marking Rank O Y hFE 100 200 160 320 1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1