TYSEMI 2SB767

SMD Type
Product specification
2SB767
Features
Large collector power dissipation PC
High collector-emitter voltage (Base open) VCEO
Mini type package, allowing downsizing of the equipment and automatic
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-80
V
Collector-emitter voltage
VCEO
-80
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-1
A
Peak collector current
ICP
-0.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
-0.1
ìA
Collector-base cutoff current
ICBO
VCB = -20 V, IE = 0
Collector-base voltage
VCBO
IC = -10ìA, IE = 0
-80
V
Collector-emitter voltage
VCEO
IC = -100ìA, IB = 0
-80
V
Emitter-base voltage
VEBO
IE = -10 ìA, IC = 0
-5
V
VCE = -10 V, IC = -150 mA
90
Forward current transfer ratio
hFE
220
Collector-emitter saturation voltage
VCE(sat) IC = -300 mA, IB = -30 mA
-0.2
-0.4
V
Base-emitter saturation voltage
VBE(sat) IC = -300 mA, IB = -30 mA
0.85
-1.2
V
Transition frequency
fT
Collector output capacitance
Cob
VCB = -10 V, IE = 50 mA, f = 200 MHz
120
VCB = -10 V, IE = 0, f = 1 MHz
20
MHz
30
pF
hFE Classification
Marking
CQ
CR
hFE
90 155
130 220
http://www.twtysemi.com
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4008-318-123
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