Transistors IC SMD Type Product specification 2SC3098 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=2.5dB,|S21e|2=14.5dB(f=500MHz) 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 NF=3.0dB,|S21e|2=9.0dB(f=1GHz) 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Collector cut-off current ICBO VCB = 10 V, IE = 0 Emitter cut-off current IEBO VEB = 1 V, IC = 0 DC current gain hFE VCE = 10 V, IC = 10 mA Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 1.15 Reverse Transfer Capacitance Cre Transition Frequency 1 ìA 1 ìA 300 pF IC = 10 mA, IB = 1 mA 0.75 pF 3.5 GHz |S21e|2(1) VCE = 10 V, IC = 10 mA,f=500MHz 14.5 dB S21e|2(2) VCE = 10 V, IC = 10 mA,f=1GHz Noise Figure 80 Unit VCE = 10 V, IC = 10 mA fT Insertion Gain 30 Max NF(1) VCB=10V, IC=5 mA, f=500MHz NF(2) VCB=10V, IC=5 mA, f=1GHz 9 dB 2.5 dB 3 dB Marking Marking MB http://www.twtysemi.com [email protected] 4008-318-123 1 of 1