Transistors IC SMD Type Silicon NPN Epitaxial 2SC3099 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NF=1.7dB,|S21e|2=15dB(f=500MHz) 0.55 Low Noise Figure +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 NF=2.5dB,|S21e|2=9.5dB(f=1GHz) +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V Collector current IC 30 mA Base current IB 15 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cut-off current ICBO VCB = 10 V, IE = 0 Emitter cut-off current IEBO VEB = 1 V, IC = 0 DC current gain hFE VCE = 10 V, IC = 5 mA Output Capacitance Cob Reverse Transfer Capacitance Cre Transition Frequency Noise Figure Typ 30 Max Unit 0.1 ìA 1.0 ìA 250 0.9 pF 0.6 pF VCE = 10 V, IC = 10 mA 4.0 GHZ |S21e|2(1) VCE = 10 V, IC = 10mA,f=500MHz 15.0 dB |S21e|2(2) VCE = 10 V, IC = 10 mA,f=1GHz fT Insertion Gain VCB = 10 V, IE = 0, f = 1 MHz Min 9.5 dB NF(1) VCB=10V, IC=3 mA, f=500MHz 1.7 dB NF(2) VCB=10V, IC=3 mA, f=1GHz 2.5 dB Marking Marking MC www.kexin.com.cn 1