KEXIN 2SC3099

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC3099
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
NF=1.7dB,|S21e|2=15dB(f=500MHz)
0.55
Low Noise Figure
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
NF=2.5dB,|S21e|2=9.5dB(f=1GHz)
+0.05
0.1-0.01
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
20
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
3
V
Collector current
IC
30
mA
Base current
IB
15
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
DC current gain
hFE
VCE = 10 V, IC = 5 mA
Output Capacitance
Cob
Reverse Transfer Capacitance
Cre
Transition Frequency
Noise Figure
Typ
30
Max
Unit
0.1
ìA
1.0
ìA
250
0.9
pF
0.6
pF
VCE = 10 V, IC = 10 mA
4.0
GHZ
|S21e|2(1) VCE = 10 V, IC = 10mA,f=500MHz
15.0
dB
|S21e|2(2) VCE = 10 V, IC = 10 mA,f=1GHz
fT
Insertion Gain
VCB = 10 V, IE = 0, f = 1 MHz
Min
9.5
dB
NF(1)
VCB=10V, IC=3 mA, f=500MHz
1.7
dB
NF(2)
VCB=10V, IC=3 mA, f=1GHz
2.5
dB
Marking
Marking
MC
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