TYSEMI BAV23A

Product specification
BAV23A
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
Switching speed: max. 50 ns
0.4
3
Small plastic SMD package
1
Continuous reverse voltage: max. 200 V
0.55
General application
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Repetitive peak reverse voltage: max. 250 V
Repetitive peak forward current: max. 625 mA.
+0.05
0.1-0.01
0-0.1
1
+0.1
0.38-0.1
+0.1
0.97-0.1
3
1.Base
2.Emitter
3.collector
2
Absolute Maximum Ratings Ta = 25
Parameter
Repetitive peak reverse voltage
Repetitive peak reverse voltage
series connection
Continuous reverse voltage
Continuous reverse voltage
series connection
Continuous forward current (single diode loaded *)
Symbol
Rating
Unit
VRRM
250
V
VRRM
500
V
VR
200
V
VR
400
V
IF
(double diode loaded *)
Repetitive peak forward current
) t=1us
t = 100us
) *
625
mA
9
IFSM
3
PD
350
mW
t =10ms
power dissipation (Tamb = 25
mA
125
IFRM
Non-repetitive peak forward current (Tj = 25
225
A
1.7
thermal resistance from junction to tie-point
Rth j-tp
360
K/W
thermal resistance from junction to ambient *
Rth j-a
500
K/W
Storage temperature
Tst g
-65 to +150
Junction temperature
Tj
150
* Device mounted on an FR4 printed-circuit board.
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 3
Product specification
BAV23A
Electrical Characteristics Ta = 25
Parameter
Symbol
Forward voltage
VF
Forward voltage
VF
Reverse current
IR
Reverse current
IR
Diode capacitance
Cd
Reverse recovery time
Conditions
Max
1.0
V
IF = 200 mA
1.25
V
series connection, IF = 100 mA
2.0
V
series connection, IF = 200 mA
VR = 200 V
2.5
V
100
nA
VR = 200V; Tj = 150
VR = 400 V
100
mA
100
nA
VR = 400V; Tj = 150
100
mA
f = 1 MHz; VR = 0 V;
5
pF
50
ns
when switched from IF =30 mA to IR = 30 mA;
trr
Unit
IF = 100 mA
RL = 100
; measured at IR = 3 mA;
Typical Characteristics
600
300
handbook, halfpage
IF
(mA)
IF
(mA)
(1)
(3)
single diode loaded
double diode loaded
200
100
0
0
0
100
o
T amb ( C)
200
Device mounted on an FR4 printed-circuit board.
Fig.1
(2)
400
200
Maximum permissible continuous forward
current as a function of ambient
temperature.
http://www.twtysemi.com
[email protected]
0
1
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.2
VF (V)
2
Forward current as a function of forward
voltage.
4008-318-123
2 of 3
Product specification
BAV23A
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
102
10
103
104
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2
10halfpage
handbook,
1.0
handbook, halfpage
Cd
(pF)
IR
(µA)
0.8
10
(1)
1
10
(2)
0.6
1
0.4
10 2
0
100
Tj (oC)
0.2
0
200
2
4
6
(1) VR = 200 V; maximum values.
(2) VR = 200 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.4
Fig.5
Reverse current as a function of junction
temperature.
http://www.twtysemi.com
[email protected]
VR (V)
8
Diode capacitance as a function of reverse
voltage; typical values.
4008-318-123
3 of 3