Product specification BAV99 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Repetitive peak forward current: max.450 mA. 1 0.55 High switching sped: max.4 ns. +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 1 2 +0.1 0.38-0.1 +0.1 0.97-0.1 3 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Repetitive peak reverse voltage Symbol Rating Unit VRRM 85 V Continuous reverse voltage VR 75 V Continuous forward current(single diode loaded *) ---------------------------------(double diode loaded *) IF 215 125 mA IFRM 450 mA Repetitive peak forward current t=1 s Non-repetitive peak forward current Tj=25 t=1ms 4 IFSM power dissipation * A 1 t=1s 0.5 PD 250 mW Thermal resistance from junction to tie-point Rth j-tp 360 K/W Thermal resistance from junction to ambient * Rth j-a 500 K/W Tj 150 Tstg -65 to +150 Junction Temperature Storage Temperature Range * Device mounted on an FR4 printed-circuit board. Electrical Characteristics Ta = 25 Symbol Parameter Forward voltage VF Reverse current IR Max Unit IF =1 mA 715 mV IF =10 mA 855 mV IF =50 mA 1 V IF =150 mA 1.25 V VR =25 V 30 nA VR =75 V 1 A VR =25 V; Tj= 150 30 A Test conditions VR =75 V; Tj= 150 50 A Diode capacitance Cd VR =0 V, f= 1 MHz 1.5 pF Reverse recovery time trr when switched from IF= 10 mA to IR=10mA;RL=100 ; measured at IR= 1mA 4 nS Forward recovery voltage Vfr IF = 10 mA, tr= 20 ns 1.75 V ■ Marking Marking A7w http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification BAV99 Typical Characteristics 300 300 handbook, halfpage IF (mA) IF (mA) (1) 200 (2) (3) 200 single diode loaded double diode loaded 100 100 0 0 0 100 T amb ( oC) 200 1 VF (V) 2 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) 104 Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 Product specification BAV99 105 0.8 handbook, halfpage Cd IR (nA) 10 (pF) V R = 75 V 4 max 103 10 0.6 75 V 0.4 25 V 2 0.2 typ typ 10 0 0 100 T j ( o C) 0 200 4 8 12 VR (V) 16 f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction temperature. http://www.twtysemi.com [email protected] Fig.6 Diode capacitance as a function of reverse voltage; typical values. 4008-318-123 3 of 3