Transistors SMD Type Product specification FMMT597 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -300 V Collector-emitter voltage VCEO -300 V Emitter-base voltage VEBO -5 V Peak collector current ICM -1 A Collector current IC -0.2 A Base current Power dissipation Operating and storage temperature range http://www.twtysemi.com IB -200 mA Ptot 500 mW Tj,Tstg -55 to +150 [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification FMMT597 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -300 Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -300 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 V Collector cutoff current V -100 nA ICBO VCB=-250V Collector-Emitter Cut-Off Current ICES VCE=-250V -100 nA Emitter cut-off current IEBO VEB=-4V -100 nA IC=-50mA, IB=-5mA -0.25 V Collector-emitter saturation voltage * VCE(sat) IC=-100mA, IB=-20mA -0.25 V Base-emitter saturation voltage * VBE(sat) IC=-100mA, IB=-20mA -1.0 V Base-emitter voltage * VBE(ON) IC=-100mA,VCE=-10V -0.85 V Static Forward Current Transfer Ratio Current-gain-bandwidth product Output capacitance hFE fT Cobo * Pulse test: tp = 300 ìs; d IC=-1mA,VCE=-10V 100 IC=-50mA,VCE=-10V * 100 IC=-100mA,VCE=-10V * 100 IC=-50mA,VCE=-10V,f=100MHz 75 300 MHz 10 VCB=-10V,f=1MHz pF 0.02. Marking Marking 597 http://www.twtysemi.com [email protected] 4008-318-123 2of 2