Product specification KBRD540CTT4 ■ Features DO-214AB(SMC) ● Guard Ring Die Construction for Transient Protection Unit: mm 6.18 5.98 7.112 6.604 ● Ideally Suited for Automatic Assembly 3.250 2.743 ● Low Forward Voltage Drop 1 2 6.223 5.588 3.27 3.07 ● High Current Capability , High Efficiency 4.69 4.49 7.67 7.47 8.128 7.747 ● Low Power Loss 2.616 2.007 1.524 0.762 0.203 0.051 Recommended Land Pattern 0.305 0.152 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Repetitive peak reverse voltage VRRM 40 V RMS voltage VRMS 28 V DC blocking voltage VDC 40 V Maximum average forward rectified current @TC=75℃ IF(AV) 5.0 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 175 A Instantaneous forward voltage at IF= 5.0A VF 0.55 V Maximum DC reverse current @TA=25℃ at rated DC blocking voltage @TA=100℃ IR Typical Junction Capacitance (Note 1) CJ 300 pF RθJA 50 ℃/W TJ -55 to +125 ℃ Tstg -55 to +150 ℃ 0.5 mA 20 Typical Thermal Resistance, Junction to Ambient Operating Temperature Range Storage Temperature Range Note: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. ■ Marking Mariking B540C http://www.twtysemi.com [email protected] 4008-318-123 1 of 1