TYSEMI KBRD540CTT4

Product specification
KBRD540CTT4
■ Features
DO-214AB(SMC)
● Guard Ring Die Construction for Transient Protection
Unit: mm
6.18
5.98
7.112
6.604
● Ideally Suited for Automatic Assembly
3.250
2.743
● Low Forward Voltage Drop
1
2
6.223
5.588
3.27
3.07
● High Current Capability , High Efficiency
4.69
4.49
7.67
7.47
8.128
7.747
● Low Power Loss
2.616
2.007
1.524
0.762
0.203
0.051
Recommended
Land Pattern
0.305
0.152
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
40
V
RMS voltage
VRMS
28
V
DC blocking voltage
VDC
40
V
Maximum average forward rectified current @TC=75℃
IF(AV)
5.0
A
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
175
A
Instantaneous forward voltage at IF= 5.0A
VF
0.55
V
Maximum DC reverse current @TA=25℃
at rated DC blocking voltage @TA=100℃
IR
Typical Junction Capacitance (Note 1)
CJ
300
pF
RθJA
50
℃/W
TJ
-55 to +125
℃
Tstg
-55 to +150
℃
0.5
mA
20
Typical Thermal Resistance, Junction to Ambient
Operating Temperature Range
Storage Temperature Range
Note: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
■ Marking
Mariking
B540C
http://www.twtysemi.com
[email protected]
4008-318-123
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