Product specification KCD32 THRU KCD310 (SCD32 THRU SCD310) DO-214AC(SMA) Features Unit: mm 3.93 3.73 4.597 3.988 For surface mounted applications. 1.575 1.397 Low profile package. 1 2 2.896 2.489 1.67 1.47 Built-in strain relief. 2.38 2.18 5.49 5.29 5.283 4.775 Metal silicon junction, majority carrier conduction. Low power loss, high efficiency. 2.438 1.981 High current capability, low forward voltage drop. Recommended Land Pattern High surge capability. 0.203 0.051 1.524 0.762 0.305 0.152 Absolute Maximum Ratings and Electrical Characteristics at 25 Parameter Symbol KCD32 KCD34 KCD36 KCD310 Unit Maximum repetitive peak reverse voltage VRRM 20 40 60 100 V Maximum RMS voltage VRMS 14 28 42 70 V Maximum DC blocking voltage VDC 20 40 60 100 V Maximum average forward rectified current I(AV) 3 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 80 A Maximum instantaneous forward voltage at 3.0A * 1 VF Maximum DC reverse current * 1 TA=25 at rated DC blocking voltage TA=100 IR 0.5 0.7 0.85 V 0.5 mA 20 R R Typical thermal resistance Operating junction temperature range Storage temperature range 55 17 JA JL TJ Tstg 10 -55 to +125 /W -55 to +150 -55 to +150 * 1. Pulse test: 300ms pulse width, 1% duty cycle. http://www.twtysemi.com [email protected] 4008-318-123 1 of 1