Product specification MBD110DWT1 MBD330DWT1;MBD770DWT1 SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 +0.15 2.3-0.15 Extremely Low Minority Carrier Lifetime +0.1 1.25-0.1 0.525 Features 0.36 Very Low Capacitance +0.05 0.1-0.02 +0.05 0.95-0.05 +0.1 0.3-0.1 +0.1 2.1-0.1 0.1max Low Reverse Leakage A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym b o l V a lu e VR 30 M B D110DW T1 R e ve rs e V o lta g e M B D330DW T1 7 M B D770DW T1 F o rw a rd P o w e r D is s ip a tio n TA = 25 J u n c tio n T e m p e ra tu re S to ra g e T e m p e ra tu re R a n g e http://www.twtysemi.com [email protected] U n it V dc 70 PF 120 TJ -5 5 to + 1 2 5 mA T stg -5 5 to + 1 5 0 4008-318-123 1 of 2 Product specification MBD110DWT1 MBD330DWT1;MBD770DWT1 Electrical Characteristics Ta = 25 Parameter Symbol Conditions VBR(R) IR = 10 A CT VR = 0, f = 1.0 MHz 0.88 1.0 VR = 15 Volts, f = 1.0 MHz 0.9 1.5 MBD770DWT1 VR = 20 Volts, f = 1.0 MHz 0.5 1.0 MBD110DWT1 VR = 3.0 V 0.02 0.25 A VR = 25 V 13 200 nAdc VR = 35 V 9 200 nAdc f = 1.0 GHz 6 MBD110DWT1 Reverse Breakdown Voltage MBD330DWT1 Diode Capacitance MBD110DWT1 MBD770DWT1 MBD330DWT1 Total Capacitance Reverse Leakage MBD330DWT1 MBD110DWT1 Typ 7.0 10 Max Volts 30 CT IR NF MBD110DWT1 IF = 10 mA 0.5 0.6 IF = 1.0 mAdc 0.38 0.45 VF MBD770DWT1 pF pF dB MBD330DWT1 Forward Voltage Unit 70 MBD770DWT1 Noise Figure Min IF = 10 mA 0.52 0.6 IF = 1.0 mAdc 0.47 0.5 IF = 10 mA 0.7 1.0 Vdc Marking Type Marking MBD110DWT1 MMBD330DWT1 MBD770DWT1 M4 http://www.twtysemi.com T4 H5 [email protected] 4008-318-123 2 of 2