CHX2095 RoHS COMPLIANT 7.5-30GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2095 is a frequency multiplier by 4 monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features ■ Broadband performance: 6.25-8.25GHz ■ 11dBm output power for +12dBm input power ■ DC power consumption, 75mA @ 3.5V (RF) ■ Chip size: 2.02 x 1.17 x 0.10mm Main Characteristics Tamb = 25°C Symbol Fin Parameter Min Input frequency range Fout Output frequency range Pin Input power Typ Max Unit 6.25 8.25 GHz 25 33 GHz 12 Pout 4xFin Output power for +12dBm input power 8 11 dBm 14 dBm ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHX20950036 - 05 Feb 10 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 7.5-30GHz Frequency Multiplier CHX2095 Electrical Characteristics These values are representative on wafer measurements that are made without bonding wires at the RF ports. Tamb = +25°C, Vd = 3.5V Vg1 = Vg2 = -0.9V, Vg3 adjusted for Id = 75mA under RF Pin = +12dBm. Symbol Fin Parameter Input frequency range Fout Output frequency range Pin Input power Min Typ Max Unit 6.25 8.25 GHz 25 33 GHz 12 Pout 4xFin Output power for +12dBm input power 11 14 dBm Pout 1xFin Fin level at the output for +12dBm input power (6.25 < Fin < 8.25GHz) 0 2 dBm Pout 2xFin 2Fin level at the output for +12dBm input power (12.5 < 2Fin < 16.5GHz) -10 3 dBm Pout 3xFin 3Fin level at the output for +12dBm input power (18.75 < 3Fin < 24.75GHz) 0 12 dBm Pout 5xFin 5Fin level at the output for +12dBm input power (31.25 < 5Fin < 41.25GHz) 0 VSWRin 8 dBm Input VSWR 2.5:1 VSWRout Output VSWR Id dBm 2.5:1 Bias current 75 mA A wire bond of typically 0.1 to 0.15nH will improve the input and output matching. Absolute Maximum Ratings Tamb = +25°C Symbol Parameter Values Unit Vd Supply voltage 4.0 V Id Supply current 150 mA Pin Input power 20 dBm Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of device above anyone of these parameters may cause permanent damage. Ref. : DSCHX20950036 - 05 Feb 10 2/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7.5-30GHz Frequency Multiplier CHX2095 Typical on Wafer Measurements Tamb = +25°C & Bias conditions: Vd = 3.5V, Vg1 = Vg 2 = -0.9V, Vg3 adjusted for Id = 75mA under RF Pin = +12dBm. 16 12 Output power (dBm) 8 4 0 -4 -8 -12 -16 -20 Pout@Fin Pout@2Fin Pout@3Fin Pout@4Fin -24 6 6.5 Ref. : DSCHX20950036 - 05 Feb 10 7 7.5 Frequency (GHz) 3/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 8 8.5 Specifications subject to change without notice 7.5-30GHz Frequency Multiplier CHX2095 Typical Jig Measurements Tamb = +25°C & Bias conditions: Vd = 3.5V, Pin = +1 1dBm (jig losses are not corrected and are evaluated to 1.5dB at 30GHz) Gate voltage Vg1=Vg2=-0.95V Id=75mA 14 14 10 10 6 6 2 2 Output power (dBm) Output power (dBm) Gate voltage Vg1=Vg2=-0.8V Id=70mA -2 -6 -10 -14 -18 Pout@Fin Pout@2Fin Pout@3Fin Pout@4Fin -22 -26 -30 5 6 7 8 9 -6 -10 -14 -18 Pout@Fin -22 Pout@2Fin -26 Pout@3Fin -30 Pout@4Fin -34 Pout@5Fin -34 -2 Pout@5Fin -38 10 5 6 7 Frequency (GHz) 8 9 Frequency (GHz) Gate voltage Vg1=Vg2=-1.1V Id=80mA 14 10 Output power (dBm) 6 2 -2 -6 -10 -14 -18 Pout@Fin Pout@2Fin Pout@3Fin Pout@4Fin Pout@5Fin -22 -26 -30 -34 5 6 7 8 9 10 Frequency (GHz) Output power (dBm) Tamb = +25°C & Bias conditions: Vd = 3.5V, Id = 75m A under RF nominal Pin = +12dBm Fin = 7.5GHz (jig losses are not corrected and are evaluated to 1.5dB at 30GHz) 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 -30 -34 -38 Pout@Fin Pout@3Fin Pout@5Fin 5 Ref. : DSCHX20950036 - 05 Feb 10 6 7 Pout@2Fin Pout@4Fin 8 9 10 11 Input pow er (dBm ) 4/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 12 13 14 Specifications subject to change without notice 10 7.5-30GHz Frequency Multiplier CHX2095 Chip Assembly and Mechanical Data Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Bonding pad positions. (Chip thickness: 100µm. All dimensions are in micrometers) Ref. : DSCHX20950036 - 05 Feb 10 5/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7.5-30GHz Frequency Multiplier CHX2095 Ordering Information Chip form: CHX2095-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHX20950036 - 05 Feb 10 6/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice