CHA5390 24-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5390 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features • • • • • • Broadband performances : 24-30GHz 25dBm output power. 24dB gain Typical in JIG measurements : 15 30 10 25 5 20 0 15 -5 10 -10 5 -15 0 -20 -5 -25 -10 22 24 26 Good broadband matchings Low DC power consumption, 460mA @ 5V 28 Frequency (GHz) 30 32 Input Rloss : grey solid line - Output Rloss : dash line. Chip size : 2.99 X 1.31 X 0.10 mm Main Characteristics Tamb. = 25°C Parameter Fop G P01 Id Min Typ Max Unit 30 GHz Operating frequency range 24 Small signal gain 21 24 dB Output power at 1dB gain compression 24 25 dBm Bias current 460 720 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : CHA53901012 - 12-Jan.-01 1/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24-30GHz Medium Power Amplifier CHA5390 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd1,2,3,4 = 5V Id=460mA Symbol Fop Parameter Min Operating frequency range G 24 Small signal gain (1) ∆G Is P1dB Typ 21 (2) Max Unit 30 GHz 24 (2) dB Small signal gain flatness (1) ±2 dB Reverse isolation 50 dB 25 dBm Pulsed output power at 1dB compression (1) 24 rd IP3 3 order intercept point 33 dBm PAE Power added efficiency at saturation 16 % VSWRin VSWRout Id Input VSWR 3.0:1 Output VSWR 3.0:1 Bias current 460 720 mA (1) On Wafer measurements (2) [26-29 GHz]: 24dB min [24-31 GHz]: 21dB min For Tj<175°C ( 80°C ambient ), Id should be below 475mA under 5V bias. Current source biasing network is recommended. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 6.0 V Id Drain bias current 720 mA Vg Gate bias voltage -2.0 to +0.4 V Pin Maximum peak input power overdrive (2) +15 dBm Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +155 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : CHA53901012 - 12-Jan.-01 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24-30GHz Medium Power Amplifier CHA5390 Typical Scattering Parameters ( On wafer Sij measurements ) Bias Conditions : Freq GHz 10,00 11,00 12,00 13,00 14,00 15,00 16,00 17,00 18,00 19,00 20,00 21,00 22,00 23,00 24,00 25,00 26,00 27,00 28,00 29,00 30,00 31,00 32,00 33,00 34,00 35,00 36,00 37,00 38,00 39,00 40,00 41,00 42,00 43,00 44,00 45,00 46,00 47,00 48,00 49,00 50,00 S11 dB -0,29 -0,28 -0,37 -0,44 -0,52 -0,72 -0,90 -1,27 -1,67 -2,46 -3,43 -4,70 -6,51 -8,25 -9,14 -8,55 -7,35 -6,98 -7,08 -8,55 -10,35 -10,35 -10,57 -9,06 -5,85 -4,00 -2,75 -2,05 -1,57 -1,31 -1,13 -0,92 -0,78 -0,68 -0,65 -0,54 -0,36 -0,27 -0,34 -0,36 -0,33 Vd1,2,3,4 = 5 Volt, Vg1=Vg2,3,4 for Id total = 460 mA. S11 /° 130,16 124,05 116,99 110,04 101,55 92,63 82,31 70,45 56,58 39,70 20,21 -3,92 -32,14 -65,38 -101,40 -132,96 -166,59 162,62 131,98 104,51 86,80 55,09 12,96 -29,71 -67,30 -102,02 -128,52 -147,84 -163,57 -176,44 172,84 163,42 154,77 146,73 139,75 133,59 127,43 121,26 115,63 110,09 104,27 Ref. : CHA53901012 - 12-Jan.-01 S12 dB -75,37 -81,16 -72,11 -67,15 -62,83 -70,09 -71,91 -76,18 -64,68 -57,90 -70,93 -72,62 -63,69 -63,11 -58,44 -61,00 -57,18 -58,79 -59,95 -53,56 -56,73 -56,70 -60,16 -60,33 -62,25 -57,44 -50,88 -54,34 -52,72 -49,31 -46,92 -50,28 -53,84 -52,16 -52,59 -61,38 -51,37 -46,98 -41,66 -51,95 -48,05 S12 /° -43,42 -71,65 -126,26 -168,43 161,43 78,51 128,46 107,49 23,57 -132,71 -36,12 -152,80 -136,16 -140,18 139,63 143,50 129,53 86,49 98,53 39,77 63,65 39,90 8,74 3,48 10,68 106,73 63,61 37,74 21,62 8,02 -24,29 -74,06 -95,08 -99,63 -134,12 -168,80 122,79 89,44 36,57 3,01 39,26 S21 dB -34,97 -28,63 -22,61 -16,98 -11,59 -6,39 -1,14 2,51 6,33 10,08 12,99 16,09 18,62 19,93 21,09 21,95 22,91 24,06 24,67 24,75 22,41 15,27 5,20 -5,52 -13,87 -25,98 -40,47 -54,58 -57,99 -44,73 -46,12 -50,08 -51,70 -53,15 -50,20 -54,54 -39,96 -35,22 -32,62 -39,27 -35,81 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 S21 /° 121,53 83,18 38,63 -5,99 -54,05 -103,80 -160,60 145,18 87,15 29,84 -40,94 -93,03 -165,91 124,97 56,97 -10,22 -80,46 -154,23 120,37 27,75 -81,77 167,03 76,86 4,57 -54,17 -129,57 149,77 67,95 -11,22 -27,42 -20,40 -74,61 -137,05 -122,09 -107,23 110,71 -168,88 -157,54 -134,30 -123,83 -4,84 S22 dB -0,06 -0,15 -0,22 -0,60 -1,15 -1,82 -3,31 -4,18 -5,81 -7,79 -12,99 -14,82 -29,66 -19,94 -12,89 -10,26 -8,40 -7,08 -6,87 -7,49 -5,44 -5,66 -7,23 -8,61 -8,80 -7,32 -5,61 -4,56 -3,80 -2,84 -2,52 -2,34 -1,76 -1,64 -1,46 -1,40 -1,33 -1,26 -1,02 -1,07 -1,07 S22 /° -86,95 -96,45 -107,06 -118,07 -129,62 -142,41 -155,90 -169,19 178,80 163,19 172,06 133,35 66,63 -63,84 -82,46 -100,64 -116,75 -132,67 -152,96 -160,23 173,15 134,04 94,35 52,15 13,41 -20,49 -44,58 -65,34 -81,87 -96,60 -109,78 -121,05 -132,13 -141,28 -149,16 -157,67 -165,36 -171,65 -179,72 174,56 168,39 Specifications subject to change without notice CHA5390 Ref. : CHA53901012 - 12-Jan.-01 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24-30GHz Medium Power Amplifier CHA5390 Typical In JIG Measurements Bias Conditions : Vd1,2,3,4 = 5 Volt, Vg1,2,3,4 for Id = 460 mA In JIG Scattering Parameters 15 30 10 25 5 20 0 15 -5 10 S11 (dB) -10 5 S22 (dB) S21 (dB) -15 0 -20 -5 -25 -10 5 10 15 20 25 Frequency (GHz) 30 35 40 Power Measurements 30 28 26 24 22 20 18 16 14 12 10 8 6 P-1dB (dBm) 4 Linear Gain (dB) Associated PAE (%) 28 29 Frequency (GHz) 30 2 0 24 25 Ref. : CHA53901012 - 12-Jan.-01 26 27 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 31 32 Specifications subject to change without notice 24-30GHz Medium Power Amplifier CHA5390 Chip Assembly and Mechanical Data Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bonding pad positions Ref. : CHA53901012 - 12-Jan.-01 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 24-30GHz Medium Power Amplifier CHA5390 ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : CHA53901012 - 12-Jan.-01 7/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice CHA5390 Ordering Information Chip form : CHA5390-99F Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : CHA53901012 - 12-Jan.-01 8/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice