CHA4092 20-30GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4092 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Typical on wafer measurements : 20 Main Features 15 Gain 10 þ Broadband performances : 20-30GHz þ 22 dBm output power ( 1dB gain comp. ) þ 17 dB ± 1.5 dB gain þ Chip size : 1.65 X 2.15 X 0.10 mm 5 (dB) 0 -5 IN -10 -15 -20 -25 OUT -30 15 20 25 30 35 Max Unit 30 GHz Frequency (GHz) Main Characteristics Tamb. = 25°C Symbol Fop G P1dB Id Parameter Min Operating frequency range 20 Small signal gain 16 Typ 17 dB Output power at 1dB gain compression 22 dBm Bias current 700 900 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA40928021 1/4 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 20-30GHz High Power Amplifier CHA4092 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd1,2,3 = 3.5Volts Symbol Fop G ∆G Parameter Min Operating frequency range (1) 20 Small signal gain (1) (2) 16 P1db VSWRin Unit 30 GHz dB ± 1.5 dB Reverse isolation (1) 30 dB Pulsed Output power at 1dB gain compression (1) 22 dBm Input VSWR (1) 2.0:1 VSWRout Output VSWR (1) Id Max 17 Small signal gain flatness (1) (2) Is Typ 2.0:1 Bias current 700 900 mA (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. In the case of a jig or a module CW mode operation, the typical output power may be around 2dB less. (2) Vd1,2,3 = 2Volts Absolute Maximum Ratings Tamb. = 25°C (1) Symbol (1) Parameter Values Unit Vd Drain bias voltage 4 V Id Drain bias current 1200 mA Vg Gate bias voltage -2 to +0.4 V Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +155 °C Operation of this device above anyone of these parameters may cause permanent damage. Ref. : DSCHA40928021 2/4 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-30GHz High Power Amplifier CHA4092 Bias Conditions : Tamb = +25°C, Vd = 3.5Volt, Vg = -0.2Volt. 25 20 Gain 15 10 (dB) 5 0 -5 -10 IN -15 OUT -20 15 20 25 30 35 Frequency (GHz) 24 20 Gain (dB) 16 Pout (dBm) 12 8 4 Freq= 20 GHz 0 -15 -10 -5 0 5 10 Input power (dBm) 24 Gain (dB) 20 16 Pout (dBm) 12 8 4 Freq= 24 GHz 0 -15 -10 -5 0 5 Input power (dBm) 24 20 Gain (dB) 16 12 Pout (dBm) 8 4 Freq= 30 GHz 0 -15 -10 -5 0 5 Input power (dBm) Ref. : DSCHA40928021 3/4 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 20-30GHz High Power Amplifier CHA4092 Chip Assembly and Mechanical Data Note : Supply feed should be capacitively bypassed. Bonding pad positions. Ordering Information : CHA4092-99F/00 united monolithic semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United monolithic semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors S.A.S. Ref. : DSCHA40928021 4/4 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice