WILLAS FM120-M+ BAV99W THRU FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers FEATURES better reverse leakage current and thermal resistance. profile surface mounted application in order to • Low z For high-speed switching applications optimize board space. z Connected series high efficiency. • Low powerinloss, High current capability, low forward voltage drop. • z Pb-Free package is available • High surge capability. RoHS product for packing code suffix ”G” for overvoltage protection. • Guardring Halogen free product for packing code suffix “H” switching. • Ultra high-speed epitaxial planar chip,1metal silicon junction. • Silicon Sensitivity z Moisture Level • Lead-free parts meet environmental standards of SOT-323 SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1 3 2 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) ina ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 MARKING: KJG or A7 by cathode band • Polarity : Indicated • Mounting Position : Any Maximum Ratings @Ta=25℃ • Weight : Approximated 0.011 gram 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) im Parameter RATINGS AND ELECTRICAL Symbol Limit MAXIMUM CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Reverse voltage VR Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Forward current IO RATINGS 75 V 150 mA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT PD Pr el Forward power dissipation Marking Code Maximum Recurrent Peak Reverse Voltage Junction temperature Maximum RMS Voltage Storage temperature Maximum DC Blocking Voltage 200 VRRM Tj 12 20 13 30 14 40 15 50 150 16 60 18 80 10 100 VRMS T 14 21 28 35 42 56 70 VDCstg 20 30 40 -55~+150 50 60 80 100 IO Peak Forward Surge Current 8.3 ms single half sine-wave IFSM ELECTRICAL CHARACTERISTICS (Ta=25℃ superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) TJ Operating Temperature Range Reverse breakdown Storage Temperature Range voltage V(BR) TSTG CHARACTERISTICS Reverse voltage leakage current Maximum Forward Voltage at 1.0A DC Forward voltage VF @T A=125℃ -55 to +125 120 200 Volts 105 ℃150 140 Volts 200 Volts Amp Amp Max - 65 to75 +175 IR= 100µA 115 ℃/W Unit PF -55 to +150 VR=20V0.50 VF IF=1mA IF=10mA IF=50mA IF=150mA CD VR=0V IR 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. DiodeResistance capacitance 2- Thermal From Junction to Ambient 40 Min 120 conditions VR=75V NOTES: Test ℃150 ℃ V 2.5 µA 0.8525 nA 0.9 ℃ SYMBOL IR FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage unless otherwise specified) CSymbol J Parameter(Note 1) Typical Junction Capacitance mW 1.0 30 Maximum Average Forward Rectified Current Unit 0.70 0.5 10 f=1MHz 0.92 Volts 715 855 1000 1250 mV 2 pF 4 ns mAmp IF=IR=10mA Reveres recovery time trr Irr=0.1×IR RL=100Ω 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS SOT-323 Plastic-Encapsulate Diodes FM120-M+ BAV99W THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-323 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 Halogen free product for packing code suffix "H" .087(2.20) • Epoxy : UL94-V0 rated flame retardant .070(1.80) 0.040(1.0) 0.024(0.6) ry .054(1.35) .045(1.15) Mechanical data .004(0.10)MIN. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. ina Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .096(2.45) .078(2.00) Pr eli m Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .056(1.40) Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 Maximum DC Blocking Voltage VDC 20 30 40 50 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range .010(0.25) .003(0.08) 18 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage .047(1.20) 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.012(0.3) Typ. 80 100 115 150 120 200 Volts 42 56 70 105 140 Volts 60 80 100 150 200 Volts 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage IR .016(0.40) .008(0.20) @T A=125℃ NOTES: .043(1.10) .032(0.80) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.9 0.92 0.5 Volts mAmps 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.D WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.