WILLAS FM120-M+ THRU SCS751G FM1200-M+ 30mA Surface Mount Schottky Barrier Rectifiers-40V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723SOD-123+ Package PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. zApplications • Ultra high-speed switching. General epitaxial planar chip, metal silicon junction. • Siliconrectification • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) zFeatures MIL-STD-19500 /228 RoHS packing code suffix "G" • powerfor mold type. 1) Smallproduct Halogen free product for packing code suffix "H" ( SOD-723 ) Mechanical data 2) Low VF • Epoxy : UL94-V0 rated flame retardant 3) High reliability 0.040(1.0) 0.024(0.6) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 SOD-723 0.031(0.8) Typ. Method 2026 zConstruction • Polarity : Indicated by cathode band Silicon epitaxial planar 0.031(0.8) Typ. Dimensions in inches and (millimeters) • Mounting Position : Any We declare that the material of product • Weight : Approximated 0.011 gram compliance with RoHS requirements. Pb-Free package is available MAXIMUM RATINGS AND RoHS product for packing code suffix ”G”ELECTRICAL CHARACTERISTICS Ratings at 25℃free ambient temperature unless otherwise specified. Halogen product for packing code suffix “H” Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% zAbsolute maximum ratings (Ta=25°C) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS Parameter Symbol Marking Code 12 Limits 13 14 Unit 15 16 18 10 115 120 VRMVRRM Reverse voltagePeak (repetitive peak) 20 40 30 40 V 50 60 80 100 150 200 Maximum Recurrent Reverse Voltage VR Reverse voltage (DC) 30 V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Average rectified forward current 30 Io mA Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 V DC IFSM 200 Forward current surge peak （60Hz・1cyc） mA J unction temperature 125 Tj ℃ Maximum Average Forward Rectified Current IO 1.0 Storage temperature -40 to +125 Tstg ℃ Peak Forward Surge Current 8.3 ms single half sine-wave zElectrical characteristic Typical Thermal Resistance (Note 2)(Ta=25°C) Parameter Typical Junction Capacitance (Note 1) Forward voltage Range Operating Temperature Reverse current Range Storage Temperature Capacitance between terminals RΘJA SymbolCJ Min. VF TJ IR TSTG Ct CHARACTERISTICS - VF Maximum Average Reverse Current at @T A=25℃ z DEVICE MARKING Rated DC Blocking Voltage Device NOTES: SCS751G Typ. Max. -55 +125 - to 0.37 0.5 2 - Unit V µA pF 40 120Conditions IF=1mA -55 to +150 VR=30V - 65 to +175 VR=1V , f=1MHz SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC 30 IFSM superimposed on rated load (JEDEC method) @T A=125℃ Marking IR 0.50 0.70 0.85 0.9 0.92 0.5 10 5 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SCS751G FM1200-M+ 30mA Surface Mount Schottky Barrier Rectifiers-40V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723SOD-123+ Package PACKAGE Pb Free Produc Package outline Features Electricalcharacteristiccurves(Ta=25OC) • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Ta=125℃ 100000 optimize board space. 10 1 0.1 0REVERSE CURRENT:IR(nA) • Low power loss, high efficiency. Ta=75℃ current capability, low forward10000 voltage drop. • High Ta=125℃ • High surge capability. Ta=25℃ protection. • Guardring for overvoltage 1000 • Ultra high-speed switching. Ta=-25℃ • Silicon epitaxial planar chip, metal silicon 100 junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 0.01 Ta=75℃ Ta=25℃ Ta=-25℃ • RoHS product for packing code suffix "G" 10 Halogen free product for packing code suffix "H" 0 Mechanical data 100 200 300 400 500 600 700 0 5 10 15 20 25 30 35 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Epoxy : UL94-V0 rated flame retardant •FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 320 310 0 Ta=25℃ VR=30V n=30pcs 800 700 600 Maximum Recurrent Peak Reverse Voltage VF DISPERSION MAP Maximum RMS Voltage VRRM Maximum DC Blocking Voltage VDC VRMS Maximum Average Forward Rectified Current 20 30 RESERVE RECOVERY TIME:trr(ns) 10 Dimensions in inches and (millimeters) 9 Storage Temperature Range AVE:3.40A 5 CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage IFSM DISRESION MAP AVE:111.0nA 8 7 25 30 Ta=25℃ f=1MHz VR=0V n=10pcs 6 5 4 AVE:1.81pF 3 2 CJ 10 13 30 14 40 15 50 16 60 14 21 28 35 42 20 30 40 50 IR DISPERSION MAP TJ Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs -55 to +125 TSTG 5 SYMBOL VF 0 @T A=125℃ NOTES: 18 80 10 100 115 150 120 200 56 70 105 140 80 100 150 200 Ct DISPERSION MAP 60 1.0 30 10 20 RΘJA 15 12 20 IO Peak Forward Surge Current 8.3 ms single half sine-wave 1cyc Ifsm 25 IFSM superimposed on rated load (JEDEC method) 15 Typical Junction Capacitance (Note 1) 10 Operating Temperature Range 20 0.040(1.0) 100 1 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0 0 AVE:304.2mV RATINGS 8.3ms Typical Thermal Resistance (Note 2) 15 0.031(0.8) Typ. PEAK SURGE FORWARD CURRENT:IFSM(A) 280 Marking Code 200 10 0.031(0.8) Typ. 900 400 specified. 300 Ratings at 25℃ ambient temperature unless otherwise 300load. Single phase half wave, 60Hz, resistive of inductive 5 0.024(0.6) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS MAXIMUM RATINGS AND 500 ELECTRICAL CHARACTERISTICS 290For capacitive load, derate current by 20% 0.071(1.8) 0.056(1.4) 1 40 1000 • Polarity : Indicated byTa=25℃ cathode band IF=1mA • Mounting Position : Any n=30pcs • Weight : Approximated 0.011 gram REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 330 0.012(0.3) Typ. 0.1 1 800 f=1MHz 0.146(3.7) 0.130(3.3) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.001 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 FORWARD CURRENT:IF(mA) SOD-123H • Low profile surface mounted application in order to 8 40 120 6 Ifsm 8.3ms 8.3ms 1cyc -55 to +150 4 - 65 to +175 2 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH AVE:11.7ns 0.50 0.70 0.85 0 IR 1 trr DISPERSION MAP 0.5 0.9 10 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.92 100 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SCS751G FM1200-M 30mA Surface Mount Schottky Barrier Rectifiers-40V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723 SOD-123+ Package PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers O C) SOD-123H 0.146(3.7) 0.130(3.3) THAERMAL IMPEDANCE:Rth (℃/W) TRANSIENT PEAK SURGE FORWARD CURRENT:IFSM(A) Electricalcharacteristiccurves(Ta=25 better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. 1000 • Low power10loss, high efficiency. • High current capability, low forward voltage drop. Ifsm • High surge 8capability. t • Guardring for overvoltage protection. switching. • Ultra high-speed 6 • Silicon epitaxial planar chip, metal silicon junction. 100 • Lead-free parts meet environmental standards of 4 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free2 product for packing code suffix "H" Mechanical data 0.071(1.8) Rth(j-c) 0.056(1.4) Mounted on epoxy board IM=1mA IF=10mA time 1ms 300us 10 0.001 0 rated flame retardant • Epoxy : UL94-V0 0.1 1 10 100 TIME:t(ms) SOD-123H • Case : Molded plastic, IFSM-t CHARACTERISTICS , • Terminals :Plated terminals, solderable per MIL-STD-750 Rth(j-a) 0.012(0.3) Typ. 0.1 0.040(1.0) 0.024(0.6) 10 TIME:t(s) Rth-t CHARACTERISTICS 0.031(0.8) Typ. 1000 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) 0.003 0.05 FORWARD POWER DISSIPATION:Pf(W) Marking Code RATINGS Sin(θ＝180) Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 0.01 Maximum RMS Voltage VRMS 14 21 20 30 Maximum DC Blocking Voltage VDC 0 Maximum Average Forward Rectified Current IO 0 0.01 0.02 0.03 0.04 0.05 AVERAGE RECTIFIED Peak Forward Surge Current 8.3 ms single half sine-wave FORWARD CURRENT：Io(A) IFSM superimposed on rated load (JEDEC Io-Pfmethod) CHARACTERISTICS Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range 0.1 RΘJA CJ TJ 15 50 60 80 10 100 115 150 120 200 35 42 56 70 105 140 50 60 80 100 150 200 0.001 28 40 16 18 Sin(θ＝180) 0 101.0 20 30 REVERSE VOLTAGE:VR(V) VR-P30 R CHARACTERISTICS 0 40 120 -55 to +125 40 -55 to +150 - 65 to +175 0.1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io 0A FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH Io FM1150-MH FM1200-MH SYMBOL 0V 0.08 VR 0.9 0.92 VVR F 0.50 0.70 0.85 t t D=t/T 0.5 Maximum Average Reverse Current at @T A=25℃ D=t/T VR=20V VR=20V IR 0.06 T Tj=125℃ Tj=125℃ DC T 10 @T A=125℃ Rated DC Blocking 0.06 Voltage DC NOTES: 0.04 D=1/2 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 14 40 TSTG CHARACTERISTICS 0A 0.08 Maximum Forward Voltage at 1.0A DC 0V D=1/2 DC SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.02 Typical Thermal Resistance (Note 2) 0.002 2- Thermal Resistance From Junction to Ambient 0.02 Sin(θ＝180) 0 2012-11 0.04 D=1/2 0.02 Sin(θ＝180) 0 0 2012-06 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Ratings at 25℃ ambient temperature unless otherwise specified. 0.04 Single phase half wave, 60Hz, resistive of inductive load. DC For capacitive load, 20% D=1/2 0.03derate current by REVERSE POWER DISSIPATION:PR (W) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SCS751G FM1200-M 30mA Surface Mount Schottky Barrier Rectifiers-40V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-723SOD-123+ Package PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. SOD−723 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) .014(0.35) .009(0.25) .026(0.65) .021(0.55) MIL-STD-19500 /228 .043(1.10) Halogen free product for packing code suffix "H" Mechanical .035(0.90) data • RoHS product for packing code suffix "G" 0.012(0.3) Typ. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Dimensions in inches and (millimeters) .026(0.65) .017(0.45) .007(0.18) .003(0.08) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 VDC 20 30 40 .059(1.50) Maximum DC Blocking Voltage .051(1.30) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 15 50 16 60 18 80 35 42 50 60 IO IFSM Typical Thermal Resistance (Note 2) 14 40 10 100 115 150 120 200 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ NOTES: SOLDERING FOOTPRINT* IR 1.1 0.043 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 0.70 0.85 0.9 0.92 0.5 10 0.45 0.0177 2- Thermal Resistance From Junction to Ambient 0.50 0.0197 SCALE 10:1 2012-06 2012-11 mm Ǔ ǒinches WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.