WILLAS FM120-M+ FM840-T1 THRUTHRU 8.0A SCHOTTKY BARRIER RECTIFIERS -40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER SMC-T1RECTIFIERS PACKAGE-20V- 200V FM1200-M+ FM8200-T1 Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to Features optimize board space. Package outline SOD-123H 0.146(3.7) SMC-T1 process excellent power dissipation offers • Batch power design, loss, high efficiency. • Low better reverse leakage current thermal resistance. current capability, lowand forward voltage drop. • High profile surface mounted application in order to • Low surge capability. • High optimize board space. • Guardring for overvoltage protection. power loss, high efficiency. • Low high-speed switching. • Ultra current capability, low forward voltage drop. • High epitaxial planar chip, metal silicon junction. • Silicon surge capability. • High parts meet environmental standards of • Lead-free for overvoltage • Guardring MIL-STD-19500 /228 protection. high-speed • Ultra product switching. for packing code suffix "G" • RoHS epitaxial metal code silicon junction. • Silicon Halogen free planar productchip, for packing suffix "H" parts meet environmental standards of • Lead-free Mechanical data 0.130(3.3) 0.272(6.9) 0.248(6.3) 0.012(0.3) Typ. 0.020(0.5) Typ. 0.071(1.8) 0.056(1.4) 0.189(4.8) 0.165(4.2) MIL-STD-19500 /228 0.070(1.8) 0.040(1.0) 0.056(1.4) 0.024(0.6) : UL94-V0 rated flame • EpoxySensitivity • Moisture Level 1 retardant • Case : Molded plastic, SOD-123H 0.048(1.2) Typ. Typ. 0.048 0.031(0.8) (1.2) Typ. Typ. 0.031(0.8) , Mechanical data • Terminals :Plated terminals, solderable per MIL-STD-750 2026 retardant rated flame • Epoxy:UL94-V0Method 0.144(3.6) 0.040(1.0) 0.128(3.2) 0.024(0.6) Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Case : Molded plastic, SMC-T1 Position : Any • Mounting 0.128(3.2) : Solder plated, solderable per • Terminals 0.112(2.8) 2026 • Weight MIL-STD-750, : ApproximatedMethod 0.011 gram • Polarity : Indicated by cathode band MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS • Mounting Position : Any Dimensions in inches and (millimeters) Ratings at 25℃ ambient temperature unless otherwise specified. • Weight : Approximated 0.155 gram Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Marking Code 12 13 14 (AT Maximum ratings and Electrical Characteristics 15=25 oC 16 18 10 115 T unless otherwise noted) A 50 60 80 100 150 Symbol MIN. TYP. MAX. UNIT PARAMETER 28 35 42 56 70 105 Maximum RMS Voltage VRMS IO 8.0 A Forward rectified current See Fig.1 Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 VDC Maximum Averagesurge Forward Rectified Current 8.3ms single 150 I FSM1.0 IO half sine-wave superimposed on Forward current A rate load (JEDEC methode) Peak Forward Surge Current 8.3 ms single half sine-wave V R = V RRM T J = 25 OC 0.5 30 IFSM IR mA Reverse current superimposed on rated load (JEDEC method) 50 V R = V RRM T J = 100 OC 40 Typical Diode Thermaljunction Resistance (Note 2) R ΘJA capacitance f=1MHz and applied 4V DC reverse voltage 700 CJ pF 120 Typical Junction Capacitance (Note 1) CJ O Storage temperature -65 +175 T STG C -55 to +125 -55 to +150 Operating Temperature Range TJ Maximum Recurrent Peak Reverse Voltage VRRM 20 30 CONDITIONS 14 21 40 120 200 Volt 140 Volts 200 Volts Amp ℃/W PF ℃ - 65 to +175 ℃ Operating *1 *3 *4 V RMS*2 VR VF V RRM SYMBOLS temperature O (V) SYMBOL (V) FM120-MHTFM130-MH (V) (V) J , ( C) FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT CHARACTERISTICS Volt 0.9 Maximum Forward Voltage40 at 1.0A DC28 0.92 V0.55 F 0.50 0.70 0.85 40 FM840-T1 -55 to +125 *1 Repetitive peak reverse voltage 0.5 Maximum Average Reverse Current at @T A=25℃ 42 60 FM860-T1 60 IR0.70 mAm @T A=125℃ Rated DC Blocking Voltage *2 RMS10 voltage 100 70 0.85 100 FM8100-T1 -55 to +150 150 150 105 0.90 FM8150-T1 NOTES: *3 Continuous reverse voltage Storage Temperature Range Amp TSTG 1- Measured at 1 MHZ and applied 4.0 VDC. 0.92 200 reverse 140voltage of200 FM8200-T1 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 *4 Maximum forward voltage@I F=8.0A WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. FM120-M+ FM840-T1 WILLAS THRU THRU 8.0A SCHOTTKY BARRIER RECTIFIERS -40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER SMC-T1 RECTIFIERS PACKAGE -20V- 200V FM1200-M+ FM8200-T1 Pb Free Product SOD-123+ PACKAGE Rating and characteristic curvesoutline Package Features • Batch process design, excellent power dissipation offers SOD-123HFORWARD FIG.2-TYPICAL CHARACTERISTICS 0.146(3.7) 0.130(3.3) 840 1 0-T 820 -T1 100 120 140 160 180 200 LEAD TEMPERATURE,(°C) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H FIG.3-MAXIMUM NON-REPETITIVE FORWARD , • Terminals :PlatedSURGE terminals, solderable per MIL-STD-750 CURRENT PEAK FORWARD SURGE CURRENT,(A) • Polarity : Indicated by cathode band • 200 Mounting Position : Any • Weight : Approximated 0.011 gram 150 V-2 00V Dimensions in inches and (millimeters) .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) J Sinespecified. Wave Ratings 100 at 25℃ ambient temperature unless otherwise JEDEC Single phase half wave, 60Hz, resistive of inductive load. method For capacitive load, derate current by 20% 50 FIG.5 - TYPICAL REVERSE SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS Code 1 5 10 12 100 20 13 30 14 40 15 100 50 VRMS 14 21 28 VDC 20 30 40 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage NUMBER OF CYCLES AT 60Hz 50 IO FIG.4-TYPICAL JUNCTION CAPACITANCE 2800 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 2400 JUNCTION CAPACITANCE,(pF) 1600 Storage Temperature Range TSTG CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ 400 .05 .1 .5 1 5 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. REVERSE VOLTAGE,(V) 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 115 150 120 200 Vol 35 42 56 70 105 140 Vol 50 60 80 100 150 200 Vol 1.0 30 10 Am Am 40 120 1.0 ℃/ TJ=75 C PF -55 to +150 ℃ - 65 to +175 0.50 0.70 ℃ 0.85 0.5 IR @T A=125℃ Rated DC Blocking Voltage 16 CHARACTERISTICS 18 10 60 80 100 FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH .1 Maximum 800 Forward Voltage at 1.0A DC 0 -55 to +125 TJ Operating Temperature Range NOTES: .01 CJ Typical 2000 Junction Capacitance (Note 1) 1200 RΘJA Typical Thermal Resistance (Note 2) REVERSE LEAKAGE CURRENT, (mA) superimposed on rated load (JEDEC method) 0.040(1.0) TJ=25 C 0.024(0.6) Pulse Width 300us 1% Duty Cycle 0.031(0.8) Typ. 0.1 Maximum Average Forward Rectified Current 100 V 1.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 8.3ms Single Half T =25 C Maximum DC Blocking Voltage 0.071(1.8) 0.056(1.4) 150 Marking0 60V 10 0.031(0.8) Typ. Method 2026 250 40V INSTANTANEOUS FORWARD CURRENT,(A) M ~F -T1 860 FM 0 20 40 60 80 Mechanical data 0.012(0.3) Typ. 50 FM AVERAGE FORWARD CURRENT,(A) better reverse leakageCURRENT current and thermal resistance. FIG.1-TYPICAL FORWARD DERATING CURVE • Low profile surface mounted application in order to optimize board space. 12 • Low power loss, high efficiency. • High current capability, low forward voltage drop. 10 • High surge capability. 8 • Guardring for overvoltage protection. 6 • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. 4 • Lead-free parts meet environmental standards of MIL-STD-19500 /228 2 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0 TJ=25 C 0.9 0.92 mAm 10 50 100 .01 0 20 40 Vol 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. FM120-M+ FM840-T1 WILLAS THRUTHRU 8.0A SCHOTTKY BARRIER RECTIFIERS -40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER SMC-T1RECTIFIERS PACKAGE-20V- 200V FM1200-M+ FM8200-T1 Pb Free Product SOD-123+ PACKAGE Package outline Features Pinning information design, excellent power dissipation offers • Batch process better reverse leakage current and thermal resistance. SOD-123H surface mounted application in order to • Low profile Pin Simplified outline optimize board space. • Low power loss, high efficiency. High current capability, low forward voltage drop. • Pin1 cathode High surgeanode capability. • Pin2 1 • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of ReelMIL-STD-19500 packing /228 • RoHS product for packing code suffix "G" COMPONENT HalogenREEL free SIZE product for packing code suffix "H" BOX REEL PACKAGE SPACING Mechanical data (pcs) (m/m) rated flame retardant • Epoxy : UL94-V0 8.0 3,000 SMC-T1 13" 0.146(3.7) 0.130(3.3) 2 0.012(0.3) Typ. 1 2 0.071(1.8) 0.056(1.4) (pcs) INNER BOX (m/m) REEL DIA, (m/m) 6,000 337*337*37 330 • Case : Molded plastic, SOD-123H , Marking • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 Type number Symbol CARTON SIZE (m/m) CARTON (pcs) 350*330*360 APPROX. GROSS WEIGHT (kg) 0.040(1.0) 0.024(0.6) 17.2 48,000 0.031(0.8) Typ. 0.031(0.8) Typ. Marking code • Polarity : Indicated by cathode band FM840-T1-TH Position : Any • Mounting FM860-T1-TH • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) SS84 SS86 FM8100-T1-TH S810 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FM8150-T1-TH S815 Ratings at 25℃ ambient temperature unless otherwise specified. FM8200-T1-TH S820 Single phase half wave, 60Hz, resistive of inductive load. Note: T1: Package code, SMC-T1 For capacitive load, derate current by 20% -T: Taping Reel SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI RATINGS Marking Code Pb-Free package is available 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM RoHS product for packing code suffix ”G” Volts Maximum RMS Voltage Halogen freeVoltage product Maximum DC Blocking Maximum Average Forward Rectified Current 14 VRMS 21 for packing code suffix 20 “H” 30 VDC Suggested solder pad layout Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) SMC-T1 Storage Temperature Range 56 70 105 140 80 100 150 200 TSTG 40 120 -55 to +125 TJ Operating Temperature Range 42 60 1.0 30 CJ Typical Junction Capacitance (Note 1) 35 50 IO IFSM RΘJA Typical Thermal Resistance (Note 2) 28 40 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 0.061 (1.55) 0.134 (3.40) Volts ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.50 0.85 0.5 IR 0.134 (3.40) @T A=125℃ 0.70 0.197(5.00) 0.9 0.92 Volts 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.061 (1.55) 0.195 (4.95) 0.024 (0.60) Dimensions in inches and (millimeters) 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. FM120-M+ FM840-T1 WILLAS THRU THRU 8.0A SCHOTTKY BARRIER RECTIFIERS -40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER SMC-T1 RECTIFIERS PACKAGE -20V- 200V FM1200-M+ FM8200-T1 Pb Free Product SOD-123+ PACKAGE Package outline Packing information Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to P0 optimize board space. • Low power loss, high efficiency. P1 • High current capability, low forward voltage drop. d • High surge capability. • Guardring for overvoltage protection. E • Ultra high-speed switching. F• Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of • 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) W B MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) rated flame retardant • Epoxy : UL94-V0 A P • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) D2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS D1 T Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS C W1 D FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 42 Maximum DC Blocking Voltage VDC 20 30 40 50 IO IFSM Symbol Maximum Average Forward Rectified Current Item Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Tolerance 18 80 56 unit:mm 60 80 1.0 SMC-T1 30 115 150 120 200 Vo 70 105 140 Vo 100 150 200 Vo Am Am 5.1040 Carrier width A 0.1 RΘJA 7.20 B Carrier length 0.1 120 Typical Junction Capacitance (Note 1) CJ Carrier depth C -55 to +125 0.1 2.50 -55 to +150 Operating Temperature Range TJ 1.50 Sprocket hole d 0.1 - 65 to +175 Storage Temperature Range TSTG 330.00 13" Reel outside diameter D 2.0 50.00 13" Reel inner diameter D1 min CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 178.00 7" Reel outside diameter D 2.0 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 62.00 7" Reel inner diameter D1 min 0.5 Maximum Average Reverse Current at hole @T A=25℃ 13.00 Feed diameter D 2 0.5 IR @Thole A=125℃ Rated DC Blocking Voltage 1.7510 E Sprocket position 0.1 5.50 Punch hole position F 0.1 NOTES: 8.00 Punch hole pitch P 0.1 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 4.00 Sprocket hole pitch P0 0.1 2- Thermal Resistance From Junction to Ambient 2.00 Embossment center P1 0.1 0.23 T Overall tape thickness 0.1 12.00 Tape width W 0.3 18.00 Reel width W1 1.0 Typical Thermal Resistance (Note 2) 10 100 ℃/ PF ℃ ℃ UN Vo mA Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.