RoHS MBR20200CT MBR20200CT SCHOTTKY BARRIER RECTIFIER ELECTRICAL CHARACTERISTICS (Tamb=25℃ Characteristic A IFSM 150 A IRRM 1 A R T IO C E L rated load (JEDEC Method) Repetitive Peak Reverse Surge Current @ t≤ 2.0µs Forward Voltage Drop J E E Peak Reverse Current N 20 VR 8.3ms Single half sine-wave superimposed on IC O @ IF=10A, TC=25℃ @IF=10A, TC=125℃ @ IF=20A, TC=25℃ 0.95 0.8 1.0 0.9 1 50 VFM @ IF=20A, TC=125℃ at Rated DC Blocking Voltage @ TC= 25℃ @ TC=125℃ Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range W C V Working Peak Reverse Voltage Non-Repetitive Peak Forward Surge Current O 123 200 VRRM @ TC=125℃ 3. ANODE Unit VRWM (Note 1) 2. CATHODE Value Peak Repetitive Reverse Voltage Average Rectified Output Current 1. ANODE unless otherwise specified) Symbol DC Blocking Voltage D T ,. L TO-220 FEATURES · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications IRM mA Cj 500 pF Tj, TSTG -65 to +150 ℃ Notes: 1. Thermal resistance junction to case mounted heat sink. 2. Measured at 1.OMHz and applied reverse voltage of 4.0V DC. WEJ ELECTRONIC CO. V Http:// www.wej.cn E-mail:[email protected]