LMV242 Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller General Description Features The LMV242 is a power amplifier (PA) controller intended for use within an RF transmit power control loop in GSM/GPRS mobile phones. The LMV242 supports all single-supply PA’s including InGaP, HBT and bipolar power amplifiers. The device operates with a single supply from 2.6V to 5.5V. Included in the PA controller are an RF detector, a ramp filter and two selectable output drivers that function as error amplifiers for two different bands. The LMV242 input interface consists two analog and two digital inputs. The analog inputs are the RF input, Ramp voltage input. The digital inputs perform the function of “Band Select” and “Shutdown/ Transmit Enable” respectively. The “Band Select” function enables either of two outputs, namely OUT1 when BS = High, or output OUT2 when BS = Low. The output that is not enabled is pulled low to the minimum output voltage. The LMV242 is active in the case TX_EN = High. When TX_EN = Low the device is in a low power consumption shutdown mode. During shutdown both outputs will be pulled low to the minimum output voltage. Individual PA characteristics are accommodated by a user selectable external RC combination. The LMV242 is offered in fully tested die form as well as in a 10-lead LLP package and is therefore especially suitable for small footprint PA module solutions. n n n n n n n n n Support of InGaP HBT, bipolar technology Quad-band operation Shutdown mode for power save in RX slot Integrated ramp filter 50 dB RF detector GPRS compliant External loop compensation option Accurate temperature compensation LLP package 3x3 mm and fully tested die sales Applications n n n n n GSM/GPRS/TDMA/TD_SCDMA mobile phone Pulse RF control Wireless LAN GSM/GPRS power amplifier module Transmit module Typical Application 20079501 VIP ® is a registered trademark of National Semiconductor Corporation. © 2004 National Semiconductor Corporation DS200795 www.national.com LMV242 Dual Output, Quad-Band GSM/GPRS Power Controller July 2004 LMV242 Absolute Maximum Ratings (Note 1) Mounting Temperature Infrared or convection (20 sec) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Operating Ratings (Note 1) Supply Voltage VDD - GND Supply Voltage 6.5V Max 2 kV Machine Model 200V Storage Temperature Range Junction Temperature (Note 6) 2.6V to 5.5V Operating Temperature Range ESD Tolerance (Note 2) Human Body Model 235˚C −65˚C to 150˚C −40˚C to +85˚C VRAMP Voltage Range 0V to 2V RF Frequency Range 450 MHz to 2 GHz 150˚C Max 2.6V Electrical Characteristics Unless otherwise specified, all limits are guaranteed to TJ = 25˚C. VDD = 2.6V. Boldface limits apply at temperature extremes (Note 4). Symbol IDD Parameter Supply Current Typ Max Units VOUT = (VDD - GND)/2 Condition 6.9 9 12 mA In Shutdown (TX_EN = 0V) VOUT = (VDD - GND)/2 0.2 30 µA VHIGH Logic Level to Enable Power (Note 7) VLOW Logic Level to Disable Power (Note 7) TON Turn-on-Time from Shutdown IEN, IBS Current into TX_EN and BS Pin Min 1.8 V 0.8 V 3.6 6 µs 0.03 5 µA 206 265 mV 120 µA/V RAMP Amplifier VRD VRAMP Deadband 1/RRAMP Transconductance (Note 8) 70 96 IOUT RAMP Ramp Amplifier Output Current VRAMP = 2V 100 162 µA RF Input Power Range (Note 5) 20 kΩ // 68 pF between VCOMP1 and VCOMP2 −50 0 dBm −63 −13 dBV 155 RF Input PIN Logarithmic Slope (Note 9) @ 900 MHz, 20 kΩ // 68 pF between VCOMP1 and VCOMP2 −1.74 @ 1800 MHz, 20 kΩ // 68 pF between VCOMP1 and VCOMP2 −1.62 @ 1900 MHz, 20 kΩ // 68 pF −1.60 µA/dB between VCOMP1 and VCOMP2 Logarithmic Intercept (Note 9) @ 2000 MHz, 20 kΩ // 68 pF between VCOMP1 and VCOMP2 −1.59 @ 900 MHz, 20 kΩ // 68 pF between VCOMP1 and VCOMP2 –50.4 @ 1800 MHz, 20 kΩ // 68 if –52.3 between VCOMP1 and VCOMP2 @ 1900 MHz, 20 kΩ // 68 pF –51.9 dBm between VCOMP1 and VCOMP2 @ 2000 MHz, 20 kΩ // 68 pF between VCOMP1 and VCOMP2 RIN DC Resistance –52.3 (Note 8) 55.7 Ω (Note 8) 5.1 MHz Error Amplifier GBW Gain-Bandwidth Product www.national.com 2 LMV242 2.6V Electrical Characteristics Unless otherwise specified, all limits are guaranteed to TJ = 25˚C. VDD = 2.6V. Boldface limits apply at temperature extremes (Note 4). (Continued) Symbol VO IO Parameter Output Swing from Rail Condition Min Typ Max From Positive Rail, Sourcing, IO = 7 mA 47 90 115 From Negative Rail Sinking, IO = −7 mA 52 90 115 Output Short Circuit Current (Note 3) Sourcing, VO = 2.4V 10 29.5 Sinking, VO. = 0.2V 10 27.1 en Output Referred Noise fMEASURE = 10 KHz, RF Input = 1800 MHz, -10 dBm, 20 kΩ // 68 pF between VCOMP1 and VCOMP2, VOUT =1.4V, set by VRAMP, (Note 8) SR Slew Rate mV mA 700 2.1 Units nV/ 4.4 V/µs 5.0V Electrical Characteristics Unless otherwise specified, all limits are guaranteed to TJ = 25˚C. VDD = 5.0V. Boldface limits apply at temperature extremes (Note 4). Symbol IDD Parameter Supply Current Typ Max Units VOUT = (VDD - GND)/2 Condition 7.8 12 15 mA In Shutdown (TX_EN = 0V) VOUT = (VDD - GND)/2 0.4 30 µA VHIGH Logic Level to Enable Power (Note 7) VLOW Logic Level to Disable Power (Note 7) TON Turn-on-Time from Shutdown IEN, IBS Current into TX_EN and BS Pin Min 1.8 V 0.8 V 1.5 6 µs 0.03 5 µA RAMP Amplifier VRD VRAMP Deadband 155 206 265 mV 1/RRAMP Transconductance (Note 8) 70 96 120 µA/V IOUT RAMP Ramp Amplifier Output Current VRAMP = 2V 100 168 µA RF Input Power Range (Note 5) 20 kΩ // 68 pF between VCOMP1 and VCOMP2 −50 0 dBm −63 −13 dBV RF Input PIN Logarithmic Slope (Note 9) @ 900 MHz, 20 kΩ // 68 pF between VCOMP1 and VCOMP2 −1.79 @ 1800 MHz, 20 kΩ // 68 pF between VCOMP1 and VCOMP2 –1.69 @ 1900 MHz, 20 kΩ // 68 pF −1.67 µA/dB between VCOMP1 and VCOMP2 Logarithmic Intercept (Note 9) @ 2000 MHz, 20 kΩ // 68 pF between VCOMP1 and VCOMP2 –1.65 @ 900 MHz, 20 kΩ // 68 pF between VCOMP1 and VCOMP2 –50.2 @ 1800 MHz, 20 kΩ // 68 pF between VCOMP1 and VCOMP2 –52.5 @ 1900 MHz, 20 kΩ // 68 pF –52.5 dBm between VCOMP1 and VCOMP2 @ 2000 MHz, 20 kΩ // 68 pF between VCOMP1 and VCOMP2 RIN DC Resistance (Note 8) –52.9 55.7 3 Ω www.national.com LMV242 5.0V Electrical Characteristics Unless otherwise specified, all limits are guaranteed to TJ = 25˚C. VDD = 5.0V. Boldface limits apply at temperature extremes (Note 4). (Continued) Symbol Parameter Condition Min Typ Max Units Error Amplifier GBW Gain-Bandwidth Product (Note 8) 5.7 VO Output Swing from Rail From Positive Rail, Sourcing, IO = 7 mA 31 80 105 From Negative Rail Sinking, IO = −7 mA 35 80 105 IO Output Short Circuit Current (Note 3) Sourcing, VO = 4.8V 15 31.5 Sinking, VO = 0.2V 15 31.5 en Output Referred Noise fMEASURE = 10 kHz, RF Input = 1800 MHz, -10dBm, 20 kΩ // 68 pF between VCOMP1 and VCOMP2, VOUT = 1.4V, set by VRAMP, (Note 8) SR Slew Rate MHz mA 770 2.5 mV nV/ 4.9 V/µs Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics. Note 2: Human body model: 1.5 kΩ in series with 100 pF. Note 3: The output is not short circuit protected internally. External protection is necessary to prevent overheating and destruction or adverse reliability. Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. Note 5: Power in dBV = dBm + 13 when the impedance is 50Ω. Note 6: The maximum power dissipation is a function of TJ(MAX) , θJA and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/θJA. All numbers apply for packages soldered directly into a PC board. Note 7: All limits are guaranteed by design or statistical analysis. Note 8: Typical values represent the most likely parametric norm. Note 9: Slope and intercept are calculated from graphs "VOUT vs. RF input power" where the current is obtained by division of the voltage by 20 kΩ. Connection Diagrams LLP-10 Bond Pad Layout 20079502 Top View 20079503 Top View www.national.com 4 LMV242 Bond Pad mechanical Dimensions X/Y Coordinates Signal Name Pad Size Pad Number X Y X Y Out 1 1 −281 617 92 92 Out 2 2 −281 490 92 92 Comp2 3 −281 363 92 92 VDD 4 −281 236 92 92 RFIN 5 −281 −617 92 92 VRAMP 6 281 −617 92 92 TX_EN 7 281 −360 92 92 BS 8 281 −118 92 92 Comp1 9 281 20 92 92 GND 10 281 187 92 92 Note: Dimensions of the bond pad coordinates are in µm Origin of the coordinates: center of the die Coordinates refer to the center of the bond pad Pin Descriptions Power Supply Digital Inputs Analog Inputs Compensation Output Pin Name Description 4 VDD Positive Supply Voltage 10 GND Power Ground 7 TX_EN Schmitt-triggered logic input. A LOW shuts down the whole chip for battery saving purposes. A HIGH enables the chip. 8 BS Schmitt-triggered Band Select pin. When BS = H, channel 1 (OUT1) is selected, when BS = L, channel 2 (OUT2) is selected. 5 RFIN RF Input connected to the Coupler output with optional attenuation to measure the Power Amplifier (PA) / Antenna RF power levels. 6 VRAMP Sets the RF output power level. The useful input voltage range is from 0.2V to 1.8V, although voltages from 0V to VDD are allowed. 9 Comp1 Connects an external RC network between the Comp1 pin and the Comp2 pin for an overall loop compensation and to control the closed loop frequency response. Conventional loop stability techniques can be used in selecting this network, such as Bode plots. A good starting value for the RC combination will be C = 68 pF and R = 0Ω. 3 Comp2 Frequency compensation pin. The BS signal switches this pin either to OUT1 or to OUT2. 1 Out1 2 Out2 This pin is connected to the PA of either channel 1 or channel 2. Note: 1. All inputs and outputs are referenced to GND (pin 10). 2. For the digital inputs, a LOW is < 0.8V and a HIGH is > 1.8V. 3. RF power detection is performed internally in the LMV242 and only an RF power coupler with optional extra attenuation has to be used. 5 www.national.com LMV242 Ordering Information Package 10-Pin LLP Tested and Wafer Form Part Number LMV242LD LMV242LDX LMV242MDA LMV242MWA Package Marking Transport Media 1k Units Tape and Reel 242LD 4.5k Units tape and Reel No Mark NSC Drawing LDA10A 300 Units Waffle Pack DA0620035 25 Wafer/Vial W008 Block Diagram 20079504 www.national.com 6 Unless otherwise specified, VDD = +2.6V, TJ = 25˚C. VOUT and Log Conformance vs. RF Input Power Supply Current vs. Supply Voltage 20079506 20079505 VOUT and Log Conformance vs. RF Input Power @ 1800 MHz VOUT and Log Conformance vs. RF Input Power @ 900 MHz 20079507 20079508 VOUT and Log Conformance vs. RF Input Power @ 2000 MHz VOUT and Log Conformance vs. RF Input Power @ 1900 MHz 20079514 20079515 7 www.national.com LMV242 Typical Performance Characteristics LMV242 Typical Performance Characteristics Unless otherwise specified, VDD = +2.6V, TJ = 25˚C. (Continued) Logarithmic Slope vs. Frequency Logarithmic Intercept vs. Frequency 20079517 20079516 RF Input Impedance vs. Frequency @ Resistance and Reactance Gain and Phase vs. Frequency 20079519 20079518 ICOMP vs. VRAMP PIN vs. VRAMP 20079520 www.national.com 20079521 8 LMV242 Typical Performance Characteristics Unless otherwise specified, VDD = +2.6V, TJ = 25˚C. (Continued) Sourcing Current vs. Output Voltage Sinking Current vs. Output Voltage 20079510 20079511 Output Voltage vs. Sourcing Current Output Voltage vs. Sinking Current 20079513 20079512 Closed Loop POUT (PA) vs. VRAMP @ DCS 1800 MHz Band Closed Loop POUT (PA) vs. VRAMP @ GSM 900 MHz Band 20079522 20079523 9 www.national.com LMV242 Typical Performance Characteristics Unless otherwise specified, VDD = +2.6V, TJ = 25˚C. (Continued) Closed Loop POUT (PA) vs. VRAMP @ PCS 1900 MHz Band Closed Loop GSM- 900 MHz Band 20079525 20079524 Closed Loop DCS-1800 MHz Band Closed Loop PCS-1900 MHz Band 20079526 www.national.com 20079527 10 POWER CONTROL PRINCIPLES The LMV242 is a member of the power loop controller family of National Semiconductor, for quad-band TDMA/GSM solutions. The typical application diagram demonstrates a basic approach for implementing the quad-band solution around an RF Power Amplifier (PA). The LMV242 contains a 50 dB Logamp detector and interfaces directly with the directional coupler. The LMV242 Base Band (control-) interface consists of 3 signals: TX_EN to enable the device, BS to select either output 1 or output 2 and VRAMP to set the RF output power to the specified level. The LMV242 gives maximum flexibility to meet GSM frequency- and time mask criteria for many different single supply Power Amplifier types like HBT or MesFET in GaAs, SiGe or Si technology. This is accomplished by the programmable Ramp characteristic from the Base Band and the TX_EN signal along with the external compensation capacitor. Typical PA Closed Loop Control Setup A typical setup of PA control loop is depicted in Figure 1. Beginning at the output of the Power Amplifier (PA), this signal is fed, usually via a directional coupler, to a detector. The error between the detector output current IDET and the ramp current IRAMP, representing the selected power setting, drives the inverting input of an op amp, configured as an integrator. A reference voltage drives the non-inverting input of the op amp. Finally the output of the integrator op amp drives the gain control input of the power amplifier, which sets the output power. The loop is stabilized when IDET is equal to IRAMP . Lets examine how this circuit works in detail. POWER AMPLIFIER CONTROLLED LOOP This section gives a general overview and understanding of how a typical Power Amplifier control loop works and how to solve the most common problems confronted in the design. General Overview The key benefit of a PA control loop circuit is its immunity to changes in the PA gain control function. When a PA controller is used, the relationship between gain and gain control 20079528 FIGURE 1. PA Control Loop 11 www.national.com LMV242 voltage (VAPC) of the PA is of no consequence to the overall transfer function. It is a function of the controller’s VRAMP voltage. Based upon the value of VRAMP, the PA controller will set the gain control voltage of the PA to a level that is necessary to produce the desired output level. Any temperature dependency in the PA gain control function will be eliminated. Also, non-linearity’s in the gain transfer function of the PA do not appear in the overall transfer function (POUT vs. VRAMP). The only requirement is that the gain control function of the PA has to be monotonic. To achieve this, it is crucial, that the LMV242’s detector is temperature stable. Application Section LMV242 Application Section Using a closed loop to control the PA has benefits over the use of a directly controlled PA. Non-linearity’s and temperature variations present in the PA transfer function do not appear in the overall transfer function, POUT vs. VRAMP The response of a typical closed loop is given in Figure 3. The shape of this curve is determined by the response of the controller’s detector. Therefore the detector needs to be accurate, temperature stable and preferably linear in dB to achieve a accurately controlled output power. The only requirement for the control loop is that the gain control function of the PA has to be monotonic. With a linear in dB detector, the relation between VRAMP and PA output power becomes linear in dB as well, which makes calibration of the system easy. (Continued) We will assume initially that the output of the PA is at some low level and that the VRAMP voltage is at 1V. The V/I converter converts the VRAMP voltage to a sinking current IRAMP. This current can only come from the integrator capacitor C. Current flow from this direction increases the output voltage of the integrator. The output voltage, which drives the VAPC of the PA, increases the gain (we assume that the PA’s gain control input has a positive sense, that is, increasing voltage increases gain). The gain will increase, thereby increasing the amplifier’s output level until the detector output current equals the ramp current IRAMP. At that point, the current through the capacitor will decrease to zero and the integrator output will be held constant, thereby settling the loop. If capacitor charge is lost over time, output voltage will decrease. However, this leakage will quickly be corrected by additional current from the detector. The loop stabilizes to IDET = IRAMP thereby creating a direct relation between the VRAMP set voltage and the PA output power, independent of the PA’s VAPC-POUT characteristics. Power Control Over Wide Dynamic Range The circuit as described so far, has been designed to produce a temperature independent output power level. If the detector has a high dynamic range, the circuit can precisely set PA output levels over a wide power range. To set a PA output power level, the reference voltage, VRAMP, is varied. To estimate the response of POUT vs. VRAMP, PIN vs. VRAMP of the LMV242 should be known (POUT = PIN + attenuation as discussed is section 3). The relation between PIN and VRAMP can be constructed out of 2 curves: • ICOMP vs, VRAMP • VOUT vs. RF Input Power (detection curve) IOUT can be calculated by dividing the VOUT of the detection curve by the feedback resistor used for measuring. With the knowledge that ICOMP = IOUT in a closed loop the resulting function PIN vs. VRAMP is shown in Figure 2. Extra attenuation should be inserted between PA output and LMV242’s PIN to match their dynamic ranges. 20079522 FIGURE 3. Closed Loop Response The response time of the loop can be controlled by varying the RC time constant of the integrator. Setting this at a low level will result in fast output settling but can result in ringing in the output envelope. Setting the RC time constant to a high value will give the loop good stability but will increase settling time. ATTENUATION BETWEEN COUPLER AND LMV242 DETECTOR Figure 4 shows a practical RF power control loop realized by using the National’s LMV242 with integrated RF detector. The RF signal from the PA passes through a directional coupler on its way to the antenna. Directional couplers are characterized by their coupling factor, which is in the 10 dB to 30 dB range, typical 20 dB. Because the coupled output must in its own right deliver some power (in this case to the detector), the coupling process takes some power from the main output. This manifests itself as insertion loss, the insertion loss being higher for lower coupling factors. It is very important to choose the right attenuation between PA output and detector input to achieve power control over the full output power range of the PA. A typical value for the output power of the PA is +35.5 dBm for GSM and +30 dBm for PCS/DCS. In order to accommodate these levels into the LMV242 detection range the minimum required total attenuation is about 35 dBm (please refer to typical performance characteristics in the datasheet and Figure 2). A typical coupler factor is 20 dB. An extra attenuation of about 15 dB should be inserted. 20079521 FIGURE 2. PIN vs. VRAMP www.national.com 12 about 206 mV, so offset voltages in the DAC or amplifier supplying the RAMP signal will not cause excess RF signal output and increased power consumption. (Continued) Extra attenuation Z between the coupler and the RF input of the LMV242 can be achieved by 2 resistors RX and RY according to Figure 3, where Transmit Enable Power consumption requirements are supported by the TX_EN function, which puts the entire chip into a power saving mode to enable maximum standby and talk time while ensuring the output does not glitch excessively during Power-up and Power-down. The device will be active in the case TX_EN = High, or otherwise go to a low power consumption shutdown mode. During shutdown the output is pulled low to minimize the output voltage. Z = 20 LOG (RIN / [RIN + RY]) or e.g. RY = 300Ω results in an attenuation of 16.9 dB. Band Select To prevent reflection back to the coupler the impedance seen by the coupler should be 50Ω (RO). The impedance consists of RX in parallel with RY + RIN. RX can be calculated with the formula: RX = [RO * (RY + RIN)] / RY RX = 50 * [1 + (50 / RY)] e.g. with RY = 300Ω, RIN = 50Ω → RX = 58Ω. The LMV242 is especially suitable for PA control loops with 2 PA’s. The 2 outputs to steer the VAPCS of the PA’s can be controlled with the band select pin. When the band select is LOW output2 is selected, while output1 is selected when band select is HIGH. The not-selected output is pulled low. Analog Output The output is driven by a rail-to-rail amplifier capable of both sourcing and sinking. Several curves are given in the “Typical performance characteristics”-section regarding the output. The output voltage vs. sourcing/sinking current curves show the typical voltage drop from the rail over temperature. The sourcing/sinking current vs. output voltage characteristics show the typical charging/discharging current, which the output is capable of delivering at a certain voltage. The output is free from glitches when enabled by TX_EN. When TX_EN is low, the selected output voltage is fixed or near GND. FREQUENCY COMPENSATION To compensate and prevent the closed loop arrangement from oscillations and overshoots at the output of the RF detector/error amplifier of the LMV242, the system can be adjusted by means of external RC components connected between Comp1 and Comp2. Exact values heavily depend on PA characteristics. A good starting point is R = 0Ω and C = 68 pF. The vast combination of PA’s and couplers available preclude a generalized formula for choosing these components. Additional frequency compensation of the closed loop system can be achieved by adding a resistor (and if needed an inductor) between the LMV242’s output and the VAPC input of the PA. Please contact National Semiconductor for additional support. 20079530 FIGURE 4. Simplified PA Control Loop with Extra Attenuation BASEBAND CONTROL OF THE LMV242 The LMV242 has 3 baseband-controlled inputs: • VRAMP signal (Base band DAC ramp signal) TIMING DIAGRAM In order to meet the timemask specifications for GSM, a good timing between the control signals and the RF signal is essential. According to the specifications the PA’s RF output power needs to ramp within 28 µsec with minimum overshoot. To achieve this, the output of the PA controller should ramp at the same time as the RF signal from the Base Band. The ramp signal sets the controllers output to the required value, where the loop needs a certain time to set this output. Therefore the ramp should be set high some time before the output has to be high. How much time depends on the setup and the PA used. If the controllers shutdown functionality is used, the shutdown should be set high about 6 µsec before the ramp is set high. • TX_EN is a digital signal (performs the function “Shutdown/Transmit Enable”). • Band Select (BS) VRAMP Signal The actual VRAMP input value sets the RF output power. By applying a certain mask shape to the “Ramp in” pin, the output voltage level of the LMV242 is adjusting the PA control voltage to get a power level (POUT/dBm) out of the PA, which is proportional to the single ramp voltage steps. The recommended VRAMP voltage range for RF power control is 0.2V to 2.0V. The VRAMP input will tolerate voltages from 0V to VDD without malfunction or damage. The VRAMP input does not change the output level until the level reaches 13 www.national.com LMV242 Application Section LMV242 Application Section • • • (Continued) The control loop can be configured by the following variables: Lead time VRAMP vs. start GSM burst Ramp profile Loop compensation • Lead time TX_EN event vs. start GSM burst 20079531 FIGURE 5. Timing VRAMP vs. RF Signal www.national.com 14 LMV242 10-Pad Bare Die 20079503 Die / Wafer Characteristics General Die Information Fabrication Attributes Physical Die Identification LMV242A Die Step A Physical Attributes Wafer Diameter 200 mm Die Size (Drawn) 889 µm x 1562 µm Bond Pad Opening Size (min) 92 µm x 92µm Bond Pad Metallization 0.5% Copper_Bal. Aluminum Passivation VOM Nitride Back Side Metal Bare Back Back Side Connection Floating 35.0 mils x 61.5 mils Thickness 216 µm Nominal Min Pitch 123 µm Nominal Note: Note: Actual die size is rounded to the nearest micron 15 www.national.com LMV242 Dual Output, Quad-Band GSM/GPRS Power Controller Physical Dimensions inches (millimeters) unless otherwise noted 10-Pin LLP NS Package Number LDA10A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. BANNED SUBSTANCE COMPLIANCE National Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain no ‘‘Banned Substances’’ as defined in CSP-9-111S2. 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