NSC NM93C13M8

NM93C13/C14
256-/1024-Bit Serial EEPROM
General Description
Features
The NM93C13/C14 is 256/1024, respectively, bits of
CMOS electrically erasable memory divided into 16/64 16bit registers. They are fabricated using National Semiconductor’s floating-gate CMOS process for high speed, high
reliability and low power. The NM93C13/C14 is available in
an 8-pin SO package to save board space.
The serial interface of the NM93C13/C14 is MICROWIRETM
compatible for simple interface to standard microcontrollers
and microprocessors. There are 7 instructions: Read,
Erase/Write Enable, Erase, Erase All, Write, Write All, and
Erase/Write Disable.
All programming cycles are completely self-timed for simplified operation. The ready/busy status is available on the DO
pin to indicate the completion of a programming cycle.
Y
Y
Y
Y
Y
Y
Y
Y
Y
Typical active current 400 mA; Typical standby current
25 mA
Reliable CMOS floating gate technology
4.5V to 5.5V operation in all modes
MICROWIRE compatible serial I/O
Self-timed programming cycle
Device status indication during programming mode
15 years data retention
Endurance: 100,000 read/write cycles minimum
Packages available: 8-pin DIP, 8-pin SO
Block Diagram
TL/D/11291 – 1
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.
MICROWIRETM is a trademark of National Semiconductor Corporation.
C1995 National Semiconductor Corporation
TL/D/11291
RRD-B30M65/Printed in U. S. A.
NM93C13/C14 256-/1024-Bit Serial EEPROM
September 1994
Connection Diagrams
Alternate SO Pinout (TM8)
NM93C14 Only
Dual-In-Line Package (N)
and 8-Pin SO (M8)
TL/D/11291–2
TL/D/11291 – 3
Top View
See NS Package M08A
See NS Package Number
N08E and M08A
Ordering Information
Commercial Temp. Range (0§ C to a 70§ C)
Pin Names
Order Number*
CS
Chip Select
NM93C13N/NM93C14N
NM93C13M8/NM93C14M8
NM93C14TM8
SK
Serial Data Clock
DI
Serial Data Input
DO
Serial Data Output
2
GND
Ground
VCC
Power Supply
Absolute Maximum Ratings (Note 1)
Operating Conditions
b 65§ C to a 150§ C
Ambient Storage Temperature
All Input or Output Voltages
with Respect to Ground
Lead Temp. (Soldering, 10 sec.)
Ambient Operating Temperature
NM93C13 – NM93C14
a 6.5V to b 0.3V
0§ C to a 70§ C
Power Supply
4.5V to 5.5V
a 300§ C
ESD Rating
2000V
DC and AC Electrical Characteristics VCC e 5.0V g 10% (unless otherwise specified) (Note 2)
Symbol
ICC1
Parameter
Conditions
Min
Max
Units
4
mA
Operating Current
CS e VIH, SK e 1 MHz
ICC3
Standby Current
CS e 0V
IIL
Input Leakage
VIN e 0V to VCC
IOL
Output Leakage
VIN e 0V to VCC
VIL
VIH
Input Low Voltage
Input High Voltage
VOL1
Output Low Voltage
IOL e 2.1 mA
VOH1
Output High Voltage
IOH e b400 mA
VOL2
VOH2
Output Low Voltage
Output High Voltage
IOL e 10 mA
IOH e b10 mA
fSK
SK Clock Frequency
tSKH
SK High Time
(Note 3)
300
ns
tSKL
SK Low Time
(Note 3)
250
ns
tSKS
SK Setup Time
50
ns
tCS
Minimum CS Low Time
250
ns
tCSS
CS Setup Time
50
ns
tDH
D0 Hold Time
70
ns
tDIS
DI Setup Time
100
ns
tCSH
CS Hold Time
0
ns
tDIH
DI Hold Time
20
tPD1
Output Delay to ‘‘1’’
tPD0
Output Delay to ‘‘0’’
500
ns
tSV
CS to Status Valid
500
ns
tDF
CS to DO in TRI-STATEÉ
tWP
Write Cycle Time
b 10
200
mA
10
mA
mA
b 10
10
b 0.1
0.8
2
VCC a 1
0.4
2.4
V
V
0.2
VCC b 0.2
1
V
MHz
ns
500
CS e VIL
V
ns
100
ns
10
ms
Capacitance (Note 4)
AC Test Conditions
TA e 25§ C f e 1 MHz
Output Load
1 TTL Gate and CL e 100 pF
Input Pulse Levels
0.4V to 2.4V
Timing Measurement Reference Level
Input
1V and 2V
Output
0.8V and 2V
Max
Units
COUT
Symbol
Output Capacitance
Test
Typ
5
pF
CIN
Input Capacitance
5
pF
Note 1: Stress above those listed under ‘‘Absolute Maximum Ratings’’ may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note 2: 100% functional test; AC/DC parameters sample tested to 0.4% AQL.
Note 3: The SK frequency specification specifies a minimum SK clock period of 1 ms, therefore in an SK clock cycle tSKH a tSKL must be greater than or equal to
1 ms. For example, if the tSKL e 500 ns then the minimum tSKH e 500 ns in order to meet the SK frequency specification.
Note 4: This parameter is periodically sampled and not 100% tested.
3
Functional Description
The NM93C13/C14 have 7 instructions as described below.
Note that the MSB of any instruction is a ‘‘1’’ and is viewed
as a start bit in the interface sequence. For the C13 and C14
the next 8 bits carry the op code and the 6-bit address for
register selection.
Read (READ):
The READ instruction outputs serial data on the DO pin.
After a READ instruction is received, the instruction and address are decoded, followed by data transfer from the selected memory register into a 16-bit serial-out shift register.
A dummy bit (logical 0) precedes the 16-bit data output
string. Output data changes are initiated by a low to high
transition of the SK clock.
Erase/Write Enable (EWEN):
When VCC is applied to the part, it powers up in the Erase/
Write Disable (EWDS) state. Therefore, all programming
modes must be preceded by an Erase/Write Enable
(EWEN) instruction. Once an Erase/Write Enable instruction is executed, programming remains enabled until an
Erase/Write Disable (EWDS) instruction is executed or VCC
is removed from the part.
Erase (ERASE):
The ERASE instruction will program all bits in the specified
register to the logical ‘1’ state. CS is brought low following
the loading of the last address bit. This falling edge of the
CS pin initiates the self-timed programming cycle.
The DO pin indicates the READY/BUSY status of the chip if
CS is brought high after a minimum of 500 ns (tCS).
DO e logical ‘0’ indicates that programming is still in progress. DO e logical ‘1’ indicates that the register, at the
address specified in the instruction, has been erased, and
the part is ready for another instruction.
Write (WRITE):
The WRITE instruction is followed by 16 bits of data to be
written into the specified address. After the last bit of data is
put on the data-in (DI) pin, CS must be brought low before
the next rising edge of the SK clock. This falling edge of CS
initiates the self-timed programming cycle. The DO pin indicates the READY/BUSY status of the chip if CS is brought
high after a minimum of 500 ns (tCS). DO e logical 0 indicates that programming is still in progress. DO e logical 1
indicates that the register at the address specified in the
instruction has been written with the data pattern specified
in the instruction and the part is ready for another instruction.
Erase All (ERAL):
The ERAL instruction will simultaneously program all registers in the memory array and set each bit to the logical ‘1’
state. The Erase All cycle is identical to the ERASE cycle
except for the different op-code. As in the ERASE mode,
the DO pin indicates the READY/BUSY status of the chip if
CS is brought high after a minimum of 500 ns (tCS). The
ERASE ALL instruction is not required, see note below.
Write All (WRAL):
The WRAL instruction will simultaneously program all registers with the data pattern specified in the instruction. As in
the WRITE mode, the DO pin indicates the READY/BUSY
status of the chip if CS is brought high after a minimum of
500 ns (tCS).
Erase/Write Disable (EWDS):
To protect against accidental data disturb, the Erase/Write
Disable (EWDS) instruction disables all programming modes
and should follow all programming operations. Execution of
a READ instruction is independent of both the EWEN and
EWDS instructions.
Note: The NM93C13/C14 devices do not require an ‘ERASE’ or ‘ERASE ALL’ prior to the ‘WRITE’ and ‘WRITE ALL’ instructions. The ‘ERASE’ and ‘ERASE ALL’
instructions are included to maintain compatibility with the NMOS NMC9346.
Instruction Set for the NM93C13 and NM93C14
SB
Op Code
Address
READ
Instruction
1
10
A5–A0
Data
Reads data stored in memory at specified address.
Comments
EWEN
1
00
11XXXX
Write enable must precede all programming modes.
ERASE
1
11
A5–A0
WRITE
1
01
A5–A0
ERAL
1
00
10XXXX
WRAL
1
00
01XXXX
EWDS
1
00
00XXXX
Erase selected register.
D15 – D0
Writes selected register.
Erases all registers.
D15 – D0
Writes all registers.
Disables all programming instructions.
4
Timing Diagrams
Synchronous Data Timing
TL/D/11291 – 4
READ:
*Address bits A5 and A4 become ‘‘don’t care’’ for NM93C13.
TL/D/11291 – 5
EWEN:
*The NM93C13 and NM93C14 require a minimum of 9 clock cycles.
TL/D/11291 – 6
5
Timing Diagrams (Continued)
EWDS:
*The NM93C13 and NM93C14 require a minimum of 9 clock cycles.
TL/D/11291 – 7
WRITE:
*Address bit A5 and A4 become ‘‘don’t care’’ for NM93C13.
TL/D/11291 – 8
WRAL:
*The NM93C13 and NM93C14 require a minimum of 9 clock cycles.
TL/D/11291 – 9
6
Timing Diagrams (Continued)
ERASE:
*Address bits A5 and A4 are ‘‘don’t care’’ for NM93C13.
TL/D/11291 – 10
ERAL:
TL/D/11291 – 11
Physical Dimensions inches (millimeters)
Molded Small Out-Line Package (M8)
Order Number NM93C13M8 or NM93C14M8
NS Package Number M08A
7
NM93C13/C14 256-/1024-Bit Serial EEPROM
Physical Dimensions inches (millimeters) (Continued)
Molded Dual-In-Line Package (N)
Order Number NM93C13N or NM93C14N
NS Package Number N08E
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