ACE632 N&P Pair Enhancement Mode MOSFET Description The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. Features N-Channel 20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V P-Channel -20V/1.0A,RDS(ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS(ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS(ON)= 950mΩ@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Typical Parameter Symbol Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 V 1.2 -1.0 0.9 -0.7 Continuous Drain Current (TJ=150℃) TA=25℃ TA=80℃ ID N-Channel P-Channel Pulsed Drain Current1) IDM 4 -3 Continuous Source Current (Diode Conduction) IS 0.6 -0.6 Power Dissipation TA=25℃ TA=70℃ PD 0.3 0.19 Unit A A W VER 1.3 1 ACE632 N&P Pair Enhancement Mode MOSFET Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TJ TSTG T≦10sec Steady State RθJA -55 to 150 O C -55 to 150 O C 360 360 400 400 O C/W Packaging Type SC-70-6 6 1 5 2 4 SC-70-6 Description 3 N-Channel 1 Source 1 2 Gate 1 3 Drain 2 4 Source 2 5 Gate 2 6 Drain 1 P-Channel Ordering information ACE632 XX + H Halogen - free Pb - free HM : SC-70-6 VER 1.3 2 ACE632 N&P Pair Enhancement Mode MOSFET Electrical Characteristics Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Drain-Source On Resistance V(BR)DSS RDS(ON) Gate Threshold Voltage VGS(th) Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(ON) Diode Forward Voltage VSD Forward Transconductance gfs VGS=0V, ID=250uA N-Ch 20 VGS=0V, ID=250uA P-Ch -20 VGS=4.5V, ID=0.95A N-Ch 0.26 0.38 VGS=-4.5V, ID=-1.0A P-Ch 0.42 0.52 VGS=2.5V, ID=0.75A N-Ch 0.32 0.45 VGS=-2.5V, ID=-0.8A P-Ch 0.58 0.70 VGS=1.8V, ID=0.65A N-Ch 0.42 0.80 VGS=-1.8V, ID=-0.5A P-Ch 0.75 0.95 VDS=VGS, ID=250uA N-Ch 0.35 1.0 VDS=VGS, ID=-250uA P-Ch -0.35 -1.0 VDS=0V, VGS=±12V N-Ch 100 VDS=0V, VGS=±12V P-Ch -100 VDS=20V, VGS=0V N-Ch 1 VDS=-20V, VGS=0V VDS=20V, VGS=0V TJ=55℃ VDS=-20V, VGS=0V TJ=55℃ VDS≧4.5V, VGS =5V P-Ch -1 N-Ch 5 P-Ch -5 V N-Ch 2 VDS≦-4.5V, VGS =-5V P-Ch -2 IS=0.5A, VGS=0V N-Ch 0.8 1.2 IS=-0.5A, VGS=0V P-Ch -0.8 -1.2 VDS=10V, ID=1.2A N-Ch 2.6 VDS=-10V, ID=-1.0A P-Ch 1.5 N-Ch 1.2 2.0 P-Ch 1.1 1.8 N-Ch 0.2 P-Ch 0.3 N-Ch 0.3 P-Ch 0.2 N-Ch 15 25 P-Ch 18 30 N-Ch 20 30 Ω V nA uA A V S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Time td(on) tr N-Channel VDS=10V, VGS=4.5V, ID≡1.2A P-Channel VDS=-10V, VGS=-4.5V, ID≡-1.0A N-Channel VDD=10V,RL=20Ω ID=0.5A, nC VER 1.3 ns 3 ACE632 N&P Pair Enhancement Mode MOSFET td(off) Turn-Off Time tf VGEN=4.5V,RG=6Ω P-Channel VDD=-10V,RL=20Ω ID=-0.5A, VGEN=-4.5V, RG=6Ω P-Ch 25 40 N-Ch 25 40 P-Ch 20 30 N-Ch 12 20 P-Ch 12 20 Typical Characteristics (N-Channel) VER 1.3 4 ACE632 N&P Pair Enhancement Mode MOSFET Typical Characteristics (N-Channel) VER 1.3 5 ACE632 N&P Pair Enhancement Mode MOSFET Typical Characteristics (N-Channel) VER 1.3 6 ACE632 N&P Pair Enhancement Mode MOSFET Typical Characteristics (P-Channel) VER 1.3 7 ACE632 N&P Pair Enhancement Mode MOSFET Typical Characteristics (P-Channel) VER 1.3 8 ACE632 N&P Pair Enhancement Mode MOSFET Typical Characteristics (P-Channel) VER 1.3 9 ACE632 N&P Pair Enhancement Mode MOSFET Packing Information SC-70-6 VER 1.3 10 ACE632 N&P Pair Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.3 11