AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) ADATA Technology Corp. Memory Module Data Sheet DDR3-1600(CL11) 240-Pin R-DIMM 4GB (512M x 72-bits) Version 1.0 Document Number : R11-0834 1 AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) Revision History Version Changes Page Date 0.0 Initial release - 2012/01/13 1.0 Update Ordering Information(SU->AD) - 2012/07/23 2 AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) Table of Contents 1. General Description .................................................................................... 4 2. Features ..................................................................................................... 4 3. Pin Assignment ................................................................................... ….5~6 4. Pin Description ....................................................................................... 7~8 5. Block Diagram............................................................................................. 9 6. Absolute Maximum Ratings ..................................................................... 10 7. DC Operating Condition .......................................................... ……………10 8. Input DC & AC Logic Level for single-ended signals…………………..…11 9. Input AC Logic Level for single-ended signals…………………………….11 10. IDD Specification……………………………………………………………….12 11.Speed Bins and CL,tRCD,tRP,tRC and tRAS for Corresponding Bin …………………………………………………………….12 12. Timing Parameters …………..……………………………………………13~14 13. Package Dimensions……………………..……………………………………15 14. Ordering Information…………..……………...…….…………………………16 3 AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) General Description： The ADATA’s module is a 512Mx72 bits 4GB(4096MB) DDR3-1600(CL11)-11-11-28 SDRAM memory module. The SPD is programmed to JEDEC standard latency 1600Mbps timing of 11-11-11-28 at 1.5V. The module is composed of eight-teen 256Mx8 bits CMOS DDR3 SDRAMs in FBGA package and one 2Kbit EEPROM in 8pin TDFN package on a 240pin glass–epoxy printed circuit board. The module is a Dual In-line Memory Module and intended for mounting onto 240-pins edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Features： • Power supply (Normal): VDD & VDDQ = 1.5V ± 0.075V • 1.5V (SSTL_15 compatible) I/O • MRS Cycle with address key programs - CAS Latency (5,6,7,8,9,10,11) - Burst Length (BL):8 and 4 with Burst Chop(BC) • Bi-directional, differential data strobe (DQS and /DQS) • Differential clock input (CK, /CK) operation • DLL aligns DQ and DQS transition with CK transition • Double-data-rate architecture; two data transfers per clock cycle • 8 independent internal bank • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ:240 ohm±1%) • Auto refresh and self refresh • Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C • 8-bit pre-fetch. • On Die Termination using ODT pin. • Lead-free products are RoHS Compliant 4 AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) Pin Assignment： Pin Front Pin Front Pin Front Pin Back Pin Back Pin Back 1 VREFDQ 41 VSS 81 DQ32 121 VSS 161 NC,DM8 201 DQ37 2 VSS 42 NC 82 DQ33 122 DQ4 162 NC 202 VSS 3 DQ0 43 NC 83 VSS 123 DQ5 163 VSS 203 DM4 4 DQ1 44 VSS 84 /DQS4 124 VSS 164 NC,CB6 204 NC 5 VSS 45 NC,CB2 85 DQS4 125 DM0 165 NC,CB7 205 VSS 6 /DQS0 46 NC,CB3 86 VSS 126 NC 166 VSS 206 DQ38 7 DQS0 47 VSS 87 DQ34 127 VSS 167 NC 207 DQ39 8 VSS 48 NC 88 DQ35 128 DQ6 168 /RESET 208 VSS 9 DQ2 49 NC 89 VSS 129 DQ7 169 CKE1,NC 209 DQ44 10 DQ3 50 CKE0 90 DQ40 130 VSS 170 VDD 210 DQ45 11 VSS 51 VDD 91 DQ41 131 DQ12 171 A15 211 VSS 12 DQ8 52 BA2 92 VSS 132 DQ13 172 A14 212 DM5 13 DQ9 53 NC 93 /DQS5 133 VSS 173 VDD 213 NC 14 VSS 54 VDD 94 DQS5 134 DM1 174 A12 214 VSS 15 /DQS1 55 A11 95 VSS 135 NC 175 A9 215 DQ46 16 DQS1 56 A7 96 DQ42 136 VSS 176 VDD 216 DQ47 17 VSS 57 VDD 97 DQ43 137 DQ14 177 A8 217 VSS 18 DQ10 58 A5 98 VSS 138 DQ15 178 A6 218 DQ52 19 DQ11 59 A4 99 DQ48 139 VSS 179 VDD 219 DQ53 20 VSS 60 VDD 100 DQ49 140 DQ20 180 A3 220 VSS 21 DQ16 61 A2 101 VSS 141 DQ21 181 A1 221 DM6 22 DQ17 62 VDD 102 /DQS6 142 VSS 182 VDD 222 NC 23 VSS 63 CK1,NC 103 DQS6 143 DM2 183 VDD 223 VSS 24 /DQS2 64 /CK1,NC 104 VSS 144 NC 184 CK0 224 DQ54 25 DQS2 65 VDD 105 DQ50 145 VSS 185 /CK0 225 DQ55 26 VSS 66 VDD 106 DQ51 146 DQ22 186 VDD 226 VSS 27 DQ18 67 VREFCA 107 VSS 147 DQ23 187 NC,/EVENT 227 DQ60 28 DQ19 68 NC 108 DQ56 148 VSS 188 A0 228 DQ61 29 VSS 69 VDD 109 DQ57 149 DQ28 189 VDD 229 VSS 30 DQ24 70 A10/AP 110 VSS 150 DQ29 190 BA1 230 DM7 31 DQ25 71 BA0 111 /DQS7 151 VSS 191 VDD 231 NC 32 VSS 72 VDD 112 DQS7 152 DM3 192 /RAS 232 VSS 33 /DQS3 73 /WE 113 VSS 153 NC 193 /S0 233 DQ62 5 AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) 34 DQS3 74 /CAS 114 DQ58 154 VSS 194 VDD 234 DQ63 35 VSS 75 VDD 115 DQ59 155 DQ30 195 ODT0 235 VSS 36 DQ26 76 /S1,NC 116 VSS 156 DQ31 196 A13 236 VDDSPD 37 DQ27 77 ODT1,NC 117 SA0 157 VSS 197 VDD 237 SA1 38 VSS 78 VDD 118 SCL 158 NC,CB4 198 NC 238 SDA 39 NC,CB0 79 NC 119 SA2 159 NC,CB5 199 VSS 239 VSS 40 NC,CB1 80 VSS 120 VTT 160 VSS 200 DQ36 240 VTT 6 AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) Pin Description： PIN NAME FUNCTION CK0~CK1, System Clock Active on the positive and negative edge to sample all inputs. /CK0~/CK1 Masks system clock to freeze operation from the next clock cycle. CKE should be enabled at CKE0~CKE1 Clock Enable least on cycle prior new command. Disable input buffers for power down in standby Disables or Enables device operation by masking or enabling all input except CK, CKE and /S0~/S1 Chip Select L(U)DQM Row / Column address are multiplexed on the same pins. A0~A14 Address (Row Address: A0~A14 , Column Address: A0~A9 , Auto precharge: A10/AP) Selects bank to be activated during row address latch time. BA0~BA2 Banks Select Selects bank for read / write during column address latch time. DQ0~DQ63 Data Data and check bit inputs / outputs are multiplexed on the same pins. CB0~CB7 DQS0~DQS8, Data Strobe Bi-directional Data Strobe DM0~DM8 Data Mask Mask input data when DM is high. /RAS Row Address Strobe /DQS0~/DQS8 /CAS Latches row addresses on the positive edge of the CK with /RAS low Column Address Strobe Latches Column addresses on the positive edge of the CK with /CAS low /WE Write Enable VDD / VSS Power Supply/Ground Enables write operation and row recharge. Power and Ground for the input buffers and the core logic. VREFDQ Power Supply reference Power Supply for reference.DQ,DM.VDD/2 VREFCA Power Supply reference Power Supply for reference. Command , address, & control.VDD/2 VDDQ Power Supply Power supply for the DDR3 SDRAM output buffers to provide improved noise immunity SDA Serial data I/O EEPROM serial data I/O 7 AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) SCL Serial clock SA0~SA2 Address in EEPROM ODT0~ODT1 On Die Termination EEPROM clock input EEPROM address input When high, termination resistance is enabled for all DQ, /DQ and DM pins, assuming the function is enabled in the Extended Mode Register Set. NC No Connection This pin is recommended to be left No Connection on the device. 8 AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) Block Diagram： 9 AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) Absolute Maximum Ratings： Parameter Symbol Value Unit VDD -0.4 ~ 1.975 V VDDQ -0.4 ~1.975 V VIN, Vout -0.4 ~ 1.975 V TStg -55 ~ +100 ℃ Voltage on VDD supply relative to Vss Voltage on VDDQ pin relative to Vss Voltage on any pin relative to Vss Storage temperature Note: DDR3 SDRAM component specification. Operation Temperature Condition Parameter Symbol Value Unit Note Normal Operating Temperature Range TC 0~+85 ℃ 1 Extended Temperature Range (Optional) TC +85~+95 ℃ 1 Note: (1) If the DRAM case temperature is above 85 ℃, the Auto-Refresh command interval has to be reduced to tREFI=3.9us. DC Operating Condition： Voltage referenced to Vss = 0V, VDD&VDDQ=1.5V±0.075V, Tc = 0 to 85 ℃ Parameter Symbol Min Max Unit Note VDD 1.425 1.575 V 1,2 VDDSPD 3 3.6 V VDDQ 1.425 1.575 V 1,2 I/O Reference Voltage(CMD/ADD) VREFCA, (DC) 0.49 x VDDQ 0.51 x VDDQ V 3,4 I/O Reference Voltage(DQ) VREFDQ, (DC) 0.49 x VDDQ 0.51 x VDDQ V 3,4 VTT VDDQ/2 - TBD VDDQ/2 +TBD V Supply Voltage Supply Voltage for Output Termination Voltage Note: (1) Under all conditions VDDQ must be less than or equal to VDD. (2) VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together. (3) The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ±1% VDD (for reference: approx. ±15mV) (4) For reference: approx. VDD/2 ±15mV 10 AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) Input DC & AC Logic Level for single-ended signals： Parameter Symbol Min Max Unit Note DC Input logic high voltage VIH (DC) VREF+100 VDD mV 1 DC Input logic low voltage VIL (DC) VSS VREF-100 mV 1 AC input logic high VIH(AC) VREF + 175 - mV 1,2 AC input logic low VIL(AC) - VREF – 175 mV 1,2 Note: 1. For DQ and DM, VREF = VREFDQ . For input only pins except RESET, or VREF = VREFCA. 2. See "Overshoot and Undershoot specifications" on component datasheet Input AC Logic Level for single-ended signals： Parameter Symbol Min Max Unit Note Differential input high VIHdiff +0.2 Note 3 V 1 Differential input low VILdiff Note 3 -0.2 V 1 Differential input high AC VIHdiff(AC) 2 (VIH(ac)-Vref) Note 3 V 2 Differential input low AC VILdiff (AC) Note 3 2 x (Vref - VIL(ac)) V 2 Notes: 1. Used to define a differential signal slew-rate. 2. For CK - CK use VIH/VIL(ac) of ADD/CMD and VREFCA; for DQS - DQS, DQSL - DQSL, DQSU - DQSU use VIH/VIL(ac) of DQs and VREFDQ; if a reduced ac-high or ac-low level is used for a signal group, then the reduced level applies also here. 3. These values are not defined, however they single-ended signals CK, /CK, DQS, /DQS, DQSL, /DQSL, DQSU, /DQSU need to be within the respective limits (VIH(dc) max, VIL(dc)min) for single-ended signals as well as the limitations for overshoot and undershoot on Component Datasheet. 11 AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) IDD Specification： Symbol Condition Typical Unit IDD0 Operating One Bank Active-Precharge Current 1188 mA IDD1 Operating One Bank Active-Read-Precharge Current 1368 mA IDD2P0 Precharge Power-Down Current Slow Exit 216 mA IDD2P1 Precharge Power-Down Current Fast Exit 810 mA IDD2Q Precharge Quiet Standby Current 1206 mA IDD2N Precharge Standby Current 1260 mA IDD3P Active Power-Down Current 810 mA IDD3N Active Standby Current 1206 mA IDD4W Operating Burst Write Current 2358 mA IDD4R Operating Burst Read Current 2358 mA IDD5B Burst Refresh Current 2448 mA IDD6 Self Refresh Current: Normal Temperature Range 108 mA IDD7 Operating Bank Interleave Read Current 5508 mA Note: IDD current measure method and detail patterns are described on DDR3 component datasheet. Only for reference. Speed Bins and CL,tRCD,tRP,tRC and tRAS for Corresponding Bin： Speed DDR3-1600 Bin(CL-tRCD-tRP) 11-11-11 Parameter min CL 11 tCK tRCD 13.125 ns tRC 48.125 ns tRRD 6 ns tCK 1.25 ns tRAS 35 ns tRP 13.125 ns tRFC 160 ns Units 12 AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) Timing Parameters: Symbol AC Characteristics Parameter tCK(DLL_OFF) Minimum Clock Cycle Time (DLL off mode) Min Max Unit 8 - ns tCH(avg) Average high pulse width 0.47 0.53 tCK(avg) tCL(avg) Average low pulse width 0.47 0.53 tCK(avg) - 125 ps 0.38 - tCK(avg) 30 - ps 65 - ps tDQSQ tQH DQS, DQS# to DQ skew, per group, per access DQ output hold time from DQS, DQS# Data setup time to DQS, DQS# referenced to Vih(ac) / Vil(ac) tDS(base) levels Data hold time from DQS, DQS# referenced to Vih(dc) / Vil(dc) tDH(base) levels tDIPW DQ and DM Input pulse width for each input 400 - ps tRPRE DQS,DQS# differential READ Preamble 0.9 - tCK(avg) tRPST DQS, DQS# differential READ Postamble 0.3 - tCK(avg) tQSH DQS, DQS# differential output high time 0.40 - tCK(avg) tQSL DQS, DQS# differential output low time 0.40 - tCK(avg) tWPRE DQS, DQS# differential WRITE Preamble 0.9 - tCK(avg) tWPST DQS, DQS# differential WRITE Postamble 0.3 - tCK(avg) -255 255 ps DQS, DQS# rising edge output access time from rising CK, tDQSCK CK# tLZ DQ, DQS and DQS# low-impedance time -500 250 ps tHZ DQ, DQS and DQS# high-impedance time - 250 ps tDQSL DQS, DQS# differential input low pulse width 0.45 0.55 tCK(avg) tDQSH DQS, DQS# differential input high pulse width 0.45 0.55 tCK(avg) tDQSS DQS, DQS# rising edge to CK, CK# rising edge -0.25 0.25 tCK(avg) tDSS DQS, DQS# falling edge setup time to CK, CK# rising edge 0.2 - tCK(avg) tDSH DQS, DQS# falling edge hold time from CK, CK# rising edge 0.2 - tCK(avg) tRTP Internal READ Command to PRECHARGE Command delay max(4nCK,7.5ns) - - max(4nCK,7.5ns) - - WRITE recovery time 15 - ns Mode Register Set command cycle time 4 - nCK Command and Address setup time to CK, CK# referenced to 65 - ps Delay from start of internal write transaction to internal read tWTR command tWR tMRD tIS(base) 13 AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) Vih(ac) / Vil(ac) levels Command and Address hold time from CK, CK# referenced to tIH(base) 140 - ps max(3nCK,6ns) - - max(3nCK,5.625ns) - - 85℃<TCASE <95℃ 0℃<TCASE <85℃ /3.9 /7.8 Vih(dc) / Vil(dc) levels Exit Power Down with DLL on to any valid command; Exit tXP Precharge Power Down with DLL frozen to commands not requiring a locked DLL tCKE CKE minimum pulse width tREFI Average Periodic Refresh interval us 14 AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) Package Dimensions： 15 AD3R1600C4G11 DDR3-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits) Ordering Information： 16