ADVANCED
LINEAR
DEVICES, INC.
ALD1115
COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET
GENERAL DESCRIPTION
APPLICATIONS
The ALD1115 is a monolithic complementary N-channel and P-channel
transistor pair intended for a broad range of analog applications. These
enhancement-mode transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS silicon gate CMOS process. It consists of
a N-channel MOSFET and a P-channel MOSFET in one package. The
ALD1115 is a dual version of the quad complementary ALD1105.
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The ALD1115 offers high input impedance and negative current
temperature coefficient. The transistor pair is designed for precision
signal switching and amplifying applications in +1V to +12V systems
where low input bias current, low input capacitance and fast switching
speed are desired. Since these are MOSFET devices, they feature very
large (almost infinite) current gain in a low frequency, or near DC,
operating environment. When connected in parallel with sources, drains
and gates connected together, a CMOS analog switch can be constructed.
In addition, the ALD1115 is intended as a building block for CMOS
inverters, differential amplifier input stages, transmission gates, and
multiplexer applications.
The ALD1115 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the field effect
transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which
is specified at 30pA at room temperature. V+ is connected to the
substrate, which is the most positive voltage potential of the ALD1115,
usually SP (5). Similarly, V- is connected to the most negative voltage
potential of the ALD1115, usually SN (1).
FEATURES
• Thermal tracking between N-channel and P-channel
• Low threshold voltage of 0.7V for both N-channel
and P-channel MOSFETs
• Low input capacitance
• High input impedance -- 1013Ω typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 109
• Single N-channel MOSFET and single P-channel
MOSFET in one package
Precision current mirrors
Complementary push-pull linear drives
Discrete analog switches
Analog signal choppers
Differential amplifier input stage
Voltage comparator
Data converters
Sample and Hold
Analog current inverter
Precision matched current sources
CMOS inverter stage
Diode clamps
Source followers
PIN CONFIGURATION
SN
1
8
V+
GN
2
7
DP
DN
3
6
GP
V-
4
5
SP
TOP VIEW
SAL, PAL PACKAGES
BLOCK DIAGRAM
GN (2)
DN (3)
SN (1)
V- (4)
ORDERING INFORMATION ("L"suffix for lead free version)
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
GP (6)
DP (7)
SP (5)
V+ (8)
ALD1115SAL
ALD1115PAL
* Contact factory for leaded (non-RoHS) or high temperature versions.
Rev 2.0 ©2011 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range SAL, PALpackages
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
Parameter
Symbol
Gate Threshold VT
Voltage
N - Channel
Min Typ
Max
0.4
Gate Threshold
Temperature
TCVT
Drift
0.7
1.0
-1.2
On Drain
Current
IDS (ON)
3
4.8
Trans-.
conductance
Gfs
1
1.8
Output
Conductance
GOS
200
Drain Source
RDS(ON)
ON Resistance
350
Unit
Test
Conditions
V
IDS = 1µA VGS = VDS
Unit
-0.4
V
mV/°C
mA
500
10
-0.7 -1.0
-1.3
VGS = VDS = 5V
-1.3
-2
mmho
VDS = 5V IDS= 10mA
0.25
µmho
Test
Conditions
IDS = -1µA VGS = VDS
mV/°C
mA
VGS = VDS = -5V
0.67
mmho
VDS = -5V IDS= -10mA
VDS = 5V IDS = 10mA
40
µmho
VDS = -5V IDS = -10mA
Ω
VDS = 0.1V VGS = 5V
1200
Ω
VDS = -0.1V VGS = -5V
V
IDS = 1µA VGS =0V
V
IDS = -1µA VGS =0V
Drain Source
Breakdown
Voltage
BVDSS
Off Drain
Current
IDS(OFF)
10
400
4
pA
nA
VDS =10V IGS = 0V
TA = 125°C
Gate Leakage
Current
IGSS
0.1
30
1
pA
nA
VDS = 0V VGS =10V
TA = 125°C
Input
Capacitance
CISS
1
3
pF
ALD1115
P - Channel
Min Typ Max
Advanced Linear Devices
1800
-10
10
400
4
pA
nA
VDS = -10V VGS = 0V
TA = 125°C
1
30
1
pA
nA
VDS = 0V VGS =-10V
TA = 125°C
1
3
pF
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TYPICAL P-CHANNEL PERFORMANCE CHARACTERISTICS
LOW VOLTAGE OUTPUT
CHARACTERISTICS
OUTPUT CHARACTERISTICS
-10
VGS = -12V
VBS = 0V
TA = 25°C
-7.5
DRAIN SOURCE CURRENT
(µA)
DRAIN SOURCE CURRENT
(mA)
500
-10V
-8V
-5.0
-6V
-2.5
-4V
VGS = -12V
VBS = 0V
TA = 25°C
250
-6V
-4V
-2V
0
-250
-2V
-500
0
0
-2
-4
-6
-8
-10
-320
-12
-160
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE VOLTAGE (V)
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
-20
1.0
IDS = -5mA
VBS = 0V
f = 1KHz
0.5
0.2
0.1
TA = +125°C
TA = +25°C
0.05
IDS = -1mA
0.02
0.01
0
VBS = 0V
DRAIN SOURCE CURRENT
(µA)
FORWARD TRANSCONDUCTANCE
(mmho)
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
-10
-5
VGS = VDS
TA = 25°C
0
-2
-4
-6
-8
-10
0
-12
-0.8
-2.4
-3.2
-4.0
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
OFF DRAIN SOURCE CURRENT
(pA)
100
VDS = 0.4V
VBS = 0V
10
-1.6
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
RDS (ON) vs. GATE SOURCE VOLTAGE
DRAIN SOURCE ON RESISTANCE
(KΩ)
4V
6V
8V
10V
12V
2V
-15
DRAIN SOURCE VOLTAGE (V)
TA = +125°C
1
TA = +25°C
1000
VDS = -12V
VGS = VBS = 0V
100
10
1
0.1
0
-2
-4
-6
-8
-10
-12
-50
-25
0
+25
+50
+75
+100 +125
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE (V)
ALD1115
320
160
0
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TYPICAL N-CHANNEL PERFORMANCE CHARACTERISTICS
LOW VOLTAGE OUTPUT
CHARACTERISTICS
OUTPUT CHARACTERISTICS
20
VBS = 0V
TA = 25°C
10V
15
8V
10
6V
5
4V
2V
0
4
6
8
10
4V
2V
0
-500
-80
0
80
160
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE
vs. DRAIN SOURCE VOLTAGE
TRANSFER CHARACTERISTIC
WITH SUBSTRATE BIAS
20
IDS = 10mA
5
TA = +25°C
TA = +125°C
VGS = VDS
TA = 25°C
DRAIN SOURCE CURRENT
(µA)
VBS = 0V
f = 1KHz
10
2
1
0.5
15
VBS = 0V
2
4
6
-6V
-8V
-10V
5
-12V
0
8
10
12
0
0.8
1.6
2.4
3.2
DRAIN SOURCE VOLTAGE (V)
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE
RDS (ON) vs. GATE SOURCE VOLTAGE
OFF DRAIN CURRENT vs.
AMBIENT TEMPERATURE
100
VDS = 0.2V
VBS = 0V
10
TA = +125°C
1
TA = +25°C
0.1
-4V
-2V
10
IDS = 1mA
0.2
0
2
4.0
1000
VDS = +12V
VGS = VBS = 0V
100
10
1
4
6
8
10
12
-50
-25
0
+25
+50
+75
+100 +125
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE (V)
ALD1115
6V
-1000
-160
12
VGS = 12V
500
20
0
DRAIN SOURCE ON RESISTANCE
(KΩ)
2
OFF DRAIN SOURCE CURRENT
(pA)
FORWARD TRANSCONDUCTANCE
(mmho)
0
VBS = 0V
TA = 25°C
DRAIN SOURCE CURRENT
(µA)
DRAIN SOURCE CURRENT
(mA)
1000
VGS = 12V
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TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
CURRENT SOURCE WITH GATE CONTROL
V+ = +5V
V+ = +5V
V+ = +5V
Q4
Q3
ISET
Q3
Q4
RSET
ISET
I SOURCE
RSET
ISOURCE
Digital Logic Control
of Current Source
Q1
Q2
Q1, Q2: N - Channel MOSFET
Q3, Q4: P - Channel MOSFET
I SOURCE = ISET
= V+ -Vt
RSET
~
=
4
RSET
Q1
ON
OFF
: N - Channel MOSFET
Q1
Q3,Q4 : P - Channel MOSFET
CMOS ANALOG SWITCH
CMOS INVERTER
CONTROL
V+
OUT
IN
IN
V+
OUT
CONTROL
ALD1115
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TYPICAL APPLICATIONS (cont.)
DIODE-CONNECTED CONFIGURATION
V+
SOURCE FOLLOWER
V+
V+
R
VOUT = V+ - V DS
IN
OUT
VOUT = V DS
RA
RB
R
CASCODE CURRENT SOURCES
V+ = +5V
V+ = +5V
ISET
RSET
ISOURCE
Q4
Q2
Q1
Q2
Q3
Q4
Q3
Q1
ISET
ISOURCE = ISET =
Q1, Q2, Q3, Q4: N - Channel MOSFET
(1/2 ALD1105 ALD1116)
ALD1115
ISOURCE
RSET
V+ - 2Vt
RSET
~
=
3
RSET
Q1, Q2, Q3, Q4: P - Channel MOSFET
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SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Dim
S (45°)
D
A
Min
1.35
Max
1.75
Min
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-8
4.69
5.00
0.185
0.196
E
3.50
4.05
0.140
0.160
1.27 BSC
e
A
A1
e
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
ø
0°
8°
0°
8°
S
0.25
0.50
0.010
0.020
b
S (45°)
H
L
ALD1115
C
ø
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PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
Millimeters
E
E1
D
S
A2
A1
e
b
A
L
Dim
Min
Max
Min
Max
A
3.81
5.08
0.105
0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-8
9.40
11.68
0.370
0.460
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
7.37
7.87
0.290
0.310
L
2.79
3.81
0.110
0.150
S-8
1.02
2.03
0.040
0.080
0°
15°
0°
15°
ø
b1
Inches
c
e1
ALD1115
ø
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