AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4914 uses advanced trench technology to provide Q1(N-Channel) excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V make a compact and efficient switch and synchronous ID= 8A (VGS=10V) rectifier combination for use in DC-DC converters. A R DS(ON) <20.5mΩ Schottky diode is co-packaged in parallel with the R DS(ON) <28mΩ synchronous MOSFET to boost efficiency further. Q2(N-Channel) 30V 8A (VGS=10V) RDS(ON) <20.5mΩ (VGS=10V) RDS(ON) <28mΩ (VGS=4.5V) ESD Protected 100% UIS Tested 100% Rg Tested ESD Protected 100% UIS Tested 100% Rg Tested SCHOTTKY VDS = 30V, IF = 3A, VF<0.5V@1A SOIC-8 Top View Bottom View D2 D1 Top View S1/A G1 S2 G2 K D1/K D1/K D2 G2 G1 A D2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS TA=25°C Continuous Drain Current TA=70°C C ID Max Q2 30 Units V ±20 ±20 V 8 8 6.5 6.5 40 A IDM 40 Avalanche Current C IAS, IAR 19 19 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 18 18 mJ Pulsed Drain Current Power Dissipation B TA=70°C PD 2 2 1.3 1.3 W Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Parameter Reverse Voltage Symbol VDS Max Schottky 30 Units V Continuous Forward Current TA=25°C TA=70°C Pulsed Diode Forward Current C TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range Rev 11: Mar. 2011 IF IFM PD TJ, TSTG www.aosmd.com 3 2.2 A 20 2 1.28 -55 to 150 W °C Page 1 of 9 AO4914 Thermal Characteristics - MOSFET Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ Max 48 62.5 Units °C/W 74 32 90 40 °C/W °C/W Typ Max Units 48 62.5 °C/W 74 32 90 40 °C/W °C/W Thermal Characteristics - Schottky Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 11: Mar. 2011 www.aosmd.com Page 2 of 9 AO4914 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Min Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS ID=250uA, VGS=0V V 0.05 VR=30V, TJ=125°C 10 VR=30V, TJ=150°C 20 IGSS Gate-Body leakage current VDS=0V,VGS=±16V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.2 VGS=10V, VDS=5V 40 VGS=10V, ID=8A 1.8 29 20.5 28 VDS=5V, ID=8A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.45 IS Maximum Body-Diode + Schottky Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance Qg(4.5V) Total Gate Charge Gate Source Charge Qgd mΩ mΩ S 0.5 V 3 A 575 730 865 pF VGS=0V, VDS=15V, f=1MHz 115 165 215 pF 50 82 120 pF VGS=0V, VDS=0V, f=1MHz 0.5 1.1 1.7 Ω 12 15 18 nC 6 7.5 9 nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs V 20.5 Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Ciss µA 17 gFS VGS=4.5V, ID=4A 10 2.4 23.5 Static Drain-Source On-Resistance TJ=125°C mA A RDS(ON) Output Capacitance Units 30 Zero Gate Voltage Drain Current by Schottky leakage) Coss Max VR=30V IDSS ID(ON) (Set Typ VGS=10V, VDS=15V, ID=8A 2.5 nC Gate Drain Charge 3 nC tD(on) Turn-On DelayTime 5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω IF=8A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 3.5 ns 19 ns 3.5 ns 8 ns nC 8 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 11: Mar. 2011 www.aosmd.com Page 3 of 9 AO4914 Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V VDS=5V 4V 3.5V 5V 25 25 20 3V ID(A) ID (A) 20 15 15 10 10 5 5 125°C 25°C VGS=2.5V 0 0 0 1 2 3 4 5 1 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.6 Normalized On-Resistance 30 25 RDS(ON) (mΩ Ω) 1.5 VGS=4.5V 20 15 VGS=10V 10 VGS=10V ID=8A 1.4 17 5 VGS=4.5V 2 ID=4A 10 1.2 1 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 50 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+01 ID=8A 125°C 1.0E+00 40 1.0E-01 125°C IS (A) RDS(ON) (mΩ Ω) 40 30 25°C 1.0E-02 1.0E-03 FET+Schottky 25°C 20 1.0E-04 10 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 11: Mar. 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 4 of 9 AO4914 Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=15V ID=8A 1200 Ciss Capacitance (pF) VGS (Volts) 8 6 4 900 600 Coss 2 300 0 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 15 100.0 Crss 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 1000 TA=25°C 10µs 100µs 1ms 1.0 10ms 0.1 TJ(Max)=150°C TA=25°C 100 Power (W) RDS(ON) limited 10.0 ID (Amps) 30 10 10s DC 1 0.0 0.01 0.1 1 VDS (Volts) 10 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 Rev 11: Mar. 2011 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 5 of 9 AO4914 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V VDS=30V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±16V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=8A ID(ON) Min Conditions gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance V 5 1.2 VGS=4.5V, ID=4A VDS=5V, ID=8A IS=1A,VGS=0V VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA 10 µA 1.8 2.4 V 17 20.5 23.5 29 20.5 28 40 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Units 1 TJ=125°C Static Drain-Source On-Resistance Max 30 TJ=55°C RDS(ON) Coss Typ A 30 0.75 mΩ mΩ S 1 V 2.5 A 600 740 888 pF 77 110 145 pF 50 82 115 pF 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 15 18 nC Qg(4.5V) Total Gate Charge 6 7.5 9 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=10V, VDS=15V, ID=8A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 2.5 nC 3 nC 5 ns 3.5 ns 19 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 6 8 10 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 14 18 22 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 11: Mar. 2011 www.aosmd.com Page 6 of 9 AO4914 Q2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V VDS=5V 4V 25 25 3.5V 5V 20 ID(A) ID (A) 20 3V 15 15 10 10 VGS=2.5V 5 25°C 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 5 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 30 Normalized On-Resistance 1.6 25 RDS(ON) (mΩ Ω) 125°C 5 VGS=4.5V 20 15 VGS=10V 10 VGS=10V ID=8A 1.4 17 5 VGS=4.5V 2 ID=4A 10 1.2 1 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 40 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=8A 1.0E+01 35 40 1.0E+00 125°C 25 -IS (A) RDS(ON) (mΩ Ω) 30 1.0E-01 125°C 1.0E-02 20 1.0E-03 15 25°C 25°C 1.0E-04 10 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 11: Mar. 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 9 AO4914 Q2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=8A 1000 8 Capacitance (pF) VGS (Volts) Ciss 6 4 800 600 400 Coss 2 200 0 0 Crss 0 3 6Q (nC) 9 12 g Figure 7: Gate-Charge Characteristics 0 15 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 1000 100.0 TA=25°C 10µs RDS(ON) 100µs 1ms 10ms 1.0 0.1 DC TJ(Max)=150°C TA=25°C 100 Power (W) 10.0 -ID (Amps) 30 10 10s 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 0.01 PD Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 11: Mar. 2011 www.aosmd.com Page 8 of 9 AO4914 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 11: Mar. 2011 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 9 of 9