AO8810 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. VDS 20V 7A ID (at VGS=4.5V) RDS(ON) (at VGS= 4.5V) < 20mΩ RDS(ON) (at VGS = 4.0V) < 20.5mΩ RDS(ON) (at VGS = 3.1V) < 21.5mΩ RDS(ON) (at VGS = 2.5V) < 23mΩ RDS(ON) (at VGS = 1.8V) < 28mΩ ESD protected Top View TSSOP8 Bottom View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 Gate-Source Voltage VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Rev 8: Oct. 2012 Steady-State Steady-State ±8 V A 1.5 W 1.0 TJ, TSTG Symbol t ≤ 10s Units V 25 PD TA=70°C Maximum 20 5.7 IDM TA=25°C S2 7 ID TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1.8KΩ S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Power Dissipation B G2 1.8KΩ Pin 1 Continuous Drain Current D2 D1 TSSOP-8 Top View RθJA RθJL www.aosmd.com -55 to 150 Typ 64 89 53 °C Max 83 120 70 Units °C/W °C/W °C/W Page 1 of 5 AO8810 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±8V VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 25 ±10 VGS=4.5V, ID=7A TJ=125°C VGS=4.0V, ID=7A 0.7 1.1 16 20 22 30 16.2 20.5 mΩ 17 21.5 mΩ VGS=2.5V, ID=6.5A 18 23 mΩ VGS=1.8V, ID=5A 21 28 mΩ 1 V 2 A Forward Transconductance VDS=5V, ID=7A 50 Diode Forward Voltage IS=1A,VGS=0V 0.62 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mΩ VGS=3.1V, ID=6.5A gFS Output Capacitance µA V A VSD Coss µA 5 Gate Threshold Voltage Units V 1 VGS(th) Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V IGSS RDS(ON) Typ S 1295 pF VGS=0V, VDS=10V, f=1MHz 160 pF 87 pF VGS=0V, VDS=0V, f=1MHz 1.8 KΩ SWITCHING PARAMETERS Qg Total Gate Charge 10 VGS=4.5V, VDS=10V, ID=7A 14 nC Qgs Gate Source Charge 4.2 nC Qgd Gate Drain Charge 2.6 nC tD(on) Turn-On DelayTime 280 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=4.5V, VDS=10V, RL=1.54Ω, RGEN=3Ω 328 ns 3.76 us 2.24 us ns nC trr Body Diode Reverse Recovery Time IF=7A, dI/dt=100A/µs, VGS=-9V 31 Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs, VGS=-9V 6.8 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 8: Oct. 2012 www.aosmd.com Page 2 of 5 AO8810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 VDS=5V 2.5V 25 1.8V 20 3.1V 20 4.5V ID(A) ID (A) 15 15 10 VGS=1.5V 10 25°C 5 5 0 0 0 1 2 3 4 0 5 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 24 VGS=1.8V 20 VGS=2.5V VGS=3.1V 18 16 VGS=4.5V VGS=4.0V 14 Normalized On-Resistance 1.6 22 RDS(ON) (mΩ Ω) 125°C VGS=4.5V ID=7A VGS=4.0V ID=7A 1.4 VGS=3.1V ID=6.5A 1.2 17 VGS=2.5V ID=6.5A 5 2 10 VGS=1.8V ID=5A 1 0.8 12 0 2 0 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 40 1.0E+01 ID=7A 1.0E+00 40 1.0E-01 125°C IS (A) RDS(ON) (mΩ Ω) 30 1.0E-02 125°C 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 8: Oct. 2012 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO8810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1800 VDS=10V ID=7A 1600 1400 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 1200 1000 800 600 400 1 Coss 200 0 Crss 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 10000 100.0 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 1000 100µs 1ms 1.0 10ms 100ms 0.1 TJ(Max)=150°C TA=25°C Power (W) 10.0 ID (Amps) 20 100 10 10s DC 1 0.0 0.00001 0.01 0.1 1 VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=120°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 8: Oct. 2012 www.aosmd.com Page 4 of 5 AO8810 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 8: Oct. 2012 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5