AO9926C 20V Dual N-Channel MOSFET General Description Product Summary The AO9926C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch. VDS 20V 7.6A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 23mΩ RDS(ON) (at VGS =4.5V) < 26mΩ RDS(ON) (at VGS=2.5V) < 34mΩ RDS(ON) (at VGS=1.8V) < 52mΩ 100% Rg Tested SOIC-8 Top View D1 Bottom View D2 Top View S2 1 8 D2 G2 S1 2 3 4 7 6 5 D2 D1 G1 G1 D1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Rev 0: Sep 2010 2 Steady-State Steady-State W 1.28 TJ, TSTG Symbol t ≤ 10s A 38 PD TA=70°C V 6.1 IDM TA=25°C Units V 7.6 ID TA=70°C Pulsed Drain Current Maximum 20 ±12 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 5 AO9926C Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ Max 20 V VDS=20V, VGS=0V 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=10V, VDS=5V 38 Units ±100 nA 0.75 1.1 V 16.5 23 25 30 VGS=4.5V, ID=7A 18.5 26 mΩ VGS=2.5V, ID=6A 24 34 mΩ VGS=1.8V, ID=2A 32 52 mΩ Forward Transconductance VDS=5V, ID=7.6A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current VGS=10V, ID=7.6A TJ=125°C RDS(ON) gFS Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz A mΩ S 1 V 2.5 A 420 525 630 pF 65 95 125 pF 45 75 105 pF 0.8 1.7 2.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12.5 nC Qg(4.5V) Total Gate Charge 6 nC VGS=10V, VDS=15V, ID=7.6A Qgs Gate Source Charge 1 nC Qgd Gate Drain Charge 2 nC tD(on) Turn-On DelayTime 3 ns 7.5 ns 20 ns 6 ns ns nC tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=1.3Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=7.6A, dI/dt=100A/µs 14 Qrr Body Diode Reverse Recovery Charge IF=7.6A, dI/dt=100A/µs 6 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep 2010 www.aosmd.com Page 2 of 5 AO9926C TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 10V 3.5V 2.5V 4.5V 15 IDD(A) IIDD (A) (A) 30 VDS=5V 20 10 1.8V 125°C 5 10 25°C VGS=3.5V 0 0 0 1 2 3 4 0 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 60 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2.5 1.8 Normalized On-Resistance 55 50 45 RDS(ON) (mΩ Ω) 0.5 40 VGS=1.8V 35 V GS=2.5V 30 25 VGS=4.5V 20 15 VGS=10V 10 0 5 VGS =4.5V ID =6A 1.6 VGS=2.5V ID=7A 1.4 17 VGS=1.8V 5 ID=2A 1.2 VGS=10V ID=7.6A 1 2 10 0.8 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 45 1.0E+02 ID=7.6A 1.0E+01 40 40 1.0E+00 30 IS (A) RDS(ON) (mΩ Ω) 35 125°C 25 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 15 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Sep 2010 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO9926C TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=10V ID=7.6A 800 Capacitance (pF) VGS (Volts) 8 6 4 600 400 Coss 2 200 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics Ciss Crss 0 15 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 10000 100.0 TA=25°C 1000 Power (W) ID (Amps) 10µs RDS(ON) limited 10.0 100µs 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 100 10 10s DC 1 0.0 0.00001 0.01 0.1 1 VDS (Volts) 10 Zθ JA Normalized Transient Thermal Resistance 1 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Sep 2010 www.aosmd.com Page 4 of 5 AO9926C Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D io d e R eco very T est C ircu it & W a vefo rm s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 0: Sep 2010 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5