万和兴电子有限公司 www.whxpcb.com AO7414 20V N-Channel MOSFET General Description Product Summary The AO7414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT-323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DCDC converters. VDS ID (at VGS=4.5V) 20V 2A RDS(ON) (at VGS=4.5V) < 62mΩ RDS(ON) (at VGS=2.5V) < 70mΩ RDS(ON) (at VGS=1.8V) < 85mΩ Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A Pulsed Drain Current B Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead Rev.2.0: April 2013 C Steady-State Steady-State A 25 W 0.22 -55 to 150 TJ, TSTG Symbol t ≤ 10s V 0.35 PD TA=70°C ±8 1.5 IDM TA=25°C Units V 2 ID TA=70°C Maximum 20 RθJA RθJL www.aosmd.com Typ 300 340 280 °C Max 360 425 320 Units °C/W °C/W °C/W Page 1 of 4 AO7414 万和兴电子有限公司 www.whxpcb.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C VDS=0V, VGS=±8V Gate Threshold Voltage VDS=VGS，ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 25 VGS=4.5V, ID=2A TJ=125°C ±100 nA 0.68 1 V 50 62 70 90 A 56 70 mΩ VGS=1.8V, ID=1A 66 85 mΩ 1 V 0.35 A 320 pF gFS Forward Transconductance VDS=5V, ID=2A 15 Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 260 VGS=0V, VDS=10V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr S 48 pF 27 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs mΩ VGS=2.5V, ID=1.8A VSD Crss µA 5 Gate-Body leakage current Units V 1 IGSS Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V VGS(th) RDS(ON) Typ VGS=4.5V, VDS=10V, ID=2A pF 3 4.5 Ω 2.9 3.8 nC 0.4 nC 0.6 nC 2.5 ns VGS=4.5V, VDS=10V, RL=5Ω, RGEN=6Ω 3.2 ns 21 ns IF=2A, dI/dt=100A/µs 14 Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs 3.4 3 ns 19 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: April 2013 www.aosmd.com Page 2 of 4 AO7414 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 4.5V 18 20 16 2.5V 14 15 ID(A) ID (A) 12 2V 10 8 10 6 4 5 VGS=1.5V 25°C 0 0 0 1 2 3 4 0 5 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 120 Normalized On-Resistance 1.6 100 RDS(ON) (mΩ Ω) 125°C 2 VGS=1.8V 80 VGS=2.5V 60 VGS=4.5V 40 0 1 2 3 VGS=2.5V ID=1.8A VGS=1.8V ID=1A 1.4 1.2 1 VGS=4.5V ID=2A 17 5 2 10 0.8 -50 4 5 6 7 8 9 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) -25 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 120 ID=2A 1.0E+01 40 1.0E+00 80 IS (A) RDS(ON) (mΩ Ω) 100 125°C 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 60 25°C 1.0E-04 1.0E-05 40 1 2 3 4 5 6 7 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0: April 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 4 AO7414 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 400 VDS=10V ID=2A 350 4 Ciss Capacitance (pF) VGS (Volts) 300 3 2 250 200 150 100 1 Coss 50 0 Crss 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000 100.0 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 10µs 100 ID (Amps) Power (W) RDS(ON) limited 10.0 100us 1.0 1 1ms DC 10 10ms 100ms 1s 0.1 0.1 1 10s 10 0.1 0.000010.00010.001 0.01 0.1 1 10 100 1000 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=250°C/W 0.1 PD 0.01 Single Pulse 0.001 1E-05 0.0001 0.001 Ton 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: April 2013 www.aosmd.com Page 4 of 4