AO7414

AO7414
20V N-Channel MOSFET
General Description
Product Summary
The AO7414 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V, in the small SOT-323 footprint. It
can be used for a wide variety of applications, including
load switching, low current inverters and low current DCDC converters.
VDS
RDS(ON) (at VGS=4.5V)
< 62mΩ
RDS(ON) (at VGS=2.5V)
< 70mΩ
RDS(ON) (at VGS=1.8V)
< 85mΩ
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
B
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead
Rev.2.0: April 2013
C
Steady-State
Steady-State
V
A
25
W
0.22
TJ, TSTG
Symbol
t ≤ 10s
±8
0.35
PD
TA=70°C
Units
V
1.5
IDM
TA=25°C
Maximum
20
2
ID
TA=70°C
20V
2A
ID (at VGS=4.5V)
RθJA
RθJL
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-55 to 150
Typ
300
340
280
°C
Max
360
425
320
Units
°C/W
°C/W
°C/W
Page 1 of 4
AO7414
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
25
TJ=55°C
±100
nA
1
V
50
62
70
90
VGS=2.5V, ID=1.8A
56
70
mΩ
VGS=1.8V, ID=1A
66
85
mΩ
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=2A
15
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
260
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=4.5V, VDS=10V, ID=2A
mΩ
S
1
V
0.35
A
320
pF
48
pF
27
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
µA
5
0.68
VGS=4.5V, ID=2A
Crss
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IDSS
RDS(ON)
Typ
pF
3
4.5
2.9
3.8
Ω
nC
0.4
nC
0.6
nC
2.5
ns
VGS=4.5V, VDS=10V, RL=5Ω,
RGEN=6Ω
3.2
ns
21
ns
IF=2A, dI/dt=100A/µs
14
Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs
3.4
3
ns
19
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: April 2013
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Page 2 of 4
AO7414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
4.5V
18
20
16
2.5V
14
15
ID(A)
ID (A)
12
2V
10
8
10
6
4
5
VGS=1.5V
25°C
0
0
0
1
2
3
4
0
5
0.5
1
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
120
Normalized On-Resistance
1.6
100
RDS(ON) (mΩ
Ω)
125°C
2
VGS=1.8V
80
VGS=2.5V
60
VGS=4.5V
40
0
1
2
3
VGS=2.5V
ID=1.8A
VGS=1.8V
ID=1A
1.4
1.2
1
VGS=4.5V
ID=2A
17
5
2
10
0.8
-50
4
5
6
7
8
9 10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
-25
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
120
1.0E+02
ID=2A
1.0E+01
40
1.0E+00
80
IS (A)
RDS(ON) (mΩ
Ω)
100
125°C
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
60
25°C
1.0E-04
1.0E-05
40
1
2
3
4
5
6
7
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0: April 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO7414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
400
VDS=10V
ID=2A
350
4
Ciss
Capacitance (pF)
VGS (Volts)
300
3
2
250
200
150
100
1
Coss
50
0
Crss
0
0
0.5
1
1.5
2
2.5
3
3.5
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100.0
TJ(Max)=150°C
TJ(Max)=150°C
TA=25°C
TA=25°C
10µs
100
ID (Amps)
Power (W)
RDS(ON)
limited
10.0
100us
1.0
1
1ms
DC
10
10ms
100ms
1s
0.1
0.1
1
10s
10
0.1
0.000010.00010.001 0.01
0.1
1
10
100 1000
100
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=250°C/W
0.1
PD
0.01
Single Pulse
0.001
1E-05
0.0001
0.001
Ton
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: April 2013
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Page 4 of 4