Datasheet

AO3460
60V N-Channel MOSFET
General Description
Product Summary
The AO3460 uses advanced trench technology to
provide excellent RDS(ON), low gate charge, and
operation with gate voltages as low as 4.5V, in the
small SOT-23 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
It is ESD protected.
VDS (V) = 60V
ID = 0.65A (VGS = 10V)
RDS(ON) < 1.7Ω (VGS = 10V)
RDS(ON) < 2Ω (VGS = 4.5V)
ESD protected
SOT23
Top View
D
Bottom View
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
60
VDS
Gate-Source Voltage
Continuous Drain
Current A, F
Pulsed Drain Current
TA=25°C
TA=70°C
TA=25°C
Power Dissipation A
±20
VGS
B
TA=70°C
Maximum Junction-to-Lead C
Rev.3.0: July 2013
V
0.65
ID
A
0.5
IDM
1.6
1.4
PD
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
0.9
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
RθJA
RθJL
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Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
Page 1 of 4
AO3460
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
ID(ON)
On state drain current
Conditions
Min
ID=250µA, VGS=0V
Typ
V
1
TJ=55°C
5
1
VGS=10V, VDS=5V
±10
µA
2.5
V
1.4
1.7
2.5
3
2
1.6
A
Static Drain-Source On-Resistance
VGS=4.5V, ID=0.5A
1.6
gFS
Forward Transconductance
VDS=5V, ID=0.65A
0.8
VSD
Diode Forward Voltage
IS=0.1A,VGS=0V
0.8
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=30V, ID=0.65A
µA
2.2
VDS=0V, VGS=±20V
VDS=VGS ID=250uA
RDS(ON)
Output Capacitance
Units
60
VDS=60V, VGS=0V
VGS=10V, ID=0.65A
Coss
Max
Ω
Ω
S
1
V
1.2
A
22
27
pF
6
10
pF
2
6
pF
250
400
Ω
0.8
2
nC
nC
0.4
1.5
0.17
1
nC
0.2
1
nC
5.3
12
ns
VGS=10V, VDS=30V, RL=75Ω,
RGEN=3Ω
2.8
6
ns
19.7
30
ns
5.5
11
ns
IF=0.65A, dI/dt=100A/µs, VGS=-9V
11.3
14
Body Diode Reverse Recovery Charge IF=0.65A, dI/dt=100A/µs, VGS=-9V
7.5
ns
nC
Body Diode Reverse Recovery Time
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0: July 2013
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Page 2 of 4
AO3460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
2
0.8
4.5V
VDS=0V, VGS=±10V
4V
1
0.6
ID(A)
ID (A)
1.5
VDS=5V
10V
6V
25°C
0.4
VDS=VGS ID=250µA
3.5V
0.5
0.2
125°C
VGS=3.0V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
3
Normalized On-Resistance
2.2
2.5
RDS(ON) (Ω
Ω)
-40°C
VGS=4.5V
2
1.5
VGS=10V
1
VGS=10V
ID=0.65A
1.8
VGS=4.5V
ID=0.5A
1.4
1.0
0.6
0
0.5
1
1.5
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
4
1.0E+00
ID=0.65A
3.5
125°C
-40°C
IS (A)
3
RDS(ON) (Ω
Ω)
25°C
1.0E-01
2.5
1.0E-02
125°C
1.0E-03
2
25°C
1.5
1.0E-04
1
2
4
6
8
10
1.0E-05
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev.3.0: July 2013
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0.0
0.4
0.8
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 4
AO3460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10
VDS=30V
ID=0.65A
Ciss
25
6
VDS=0V, VGS=±10V
4
VDS=VGS ID=250µA
Capacitance (pF)
VGS (Volts)
8
2
20
15
10
Coss
5
0
0.0
0.1
0.2
0.3
0.4
0.5
Crss
0
0.6
0
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
50
60
20
10µs
100µs
1ms
10ms
RDS(ON)
limited
0.100
0.1s
1s
10s
DC
0.010
0.001
0.1
12
8
4
TJ(Max)=150°C
TC=25°C
0.01
TJ(Max)=150°C
TA=25°C
16
Power (W)
1.000
ID (Amps)
30
VDS (Volts)
Figure 8: Capacitance Characteristics
10.000
1
10
100
0
0.0001
VDS (Volts)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
20
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev.3.0: July 2013
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Page 4 of 4