AO3460 60V N-Channel MOSFET General Description Product Summary The AO3460 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected. VDS (V) = 60V ID = 0.65A (VGS = 10V) RDS(ON) < 1.7Ω (VGS = 10V) RDS(ON) < 2Ω (VGS = 4.5V) ESD protected SOT23 Top View D Bottom View D D G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage 60 VDS Gate-Source Voltage Continuous Drain Current A, F Pulsed Drain Current TA=25°C TA=70°C TA=25°C Power Dissipation A ±20 VGS B TA=70°C Maximum Junction-to-Lead C Rev.3.0: July 2013 V 0.65 ID A 0.5 IDM 1.6 1.4 PD °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 0.9 Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V RθJA RθJL www.aosmd.com Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 4 AO3460 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage ID(ON) On state drain current Conditions Min ID=250µA, VGS=0V Typ V 1 TJ=55°C 5 1 VGS=10V, VDS=5V ±10 µA 2.5 V 1.4 1.7 2.5 3 2 1.6 A Static Drain-Source On-Resistance VGS=4.5V, ID=0.5A 1.6 gFS Forward Transconductance VDS=5V, ID=0.65A 0.8 VSD Diode Forward Voltage IS=0.1A,VGS=0V 0.8 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=30V, ID=0.65A µA 2.2 VDS=0V, VGS=±20V VDS=VGS ID=250uA RDS(ON) Output Capacitance Units 60 VDS=60V, VGS=0V VGS=10V, ID=0.65A Coss Max Ω Ω S 1 V 1.2 A 22 27 pF 6 10 pF 2 6 pF 250 400 Ω 0.8 2 nC nC 0.4 1.5 0.17 1 nC 0.2 1 nC 5.3 12 ns VGS=10V, VDS=30V, RL=75Ω, RGEN=3Ω 2.8 6 ns 19.7 30 ns 5.5 11 ns IF=0.65A, dI/dt=100A/µs, VGS=-9V 11.3 14 Body Diode Reverse Recovery Charge IF=0.65A, dI/dt=100A/µs, VGS=-9V 7.5 ns nC Body Diode Reverse Recovery Time A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: July 2013 www.aosmd.com Page 2 of 4 AO3460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1 2 0.8 4.5V VDS=0V, VGS=±10V 4V 1 0.6 ID(A) ID (A) 1.5 VDS=5V 10V 6V 25°C 0.4 VDS=VGS ID=250µA 3.5V 0.5 0.2 125°C VGS=3.0V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 3 Normalized On-Resistance 2.2 2.5 RDS(ON) (Ω Ω) -40°C VGS=4.5V 2 1.5 VGS=10V 1 VGS=10V ID=0.65A 1.8 VGS=4.5V ID=0.5A 1.4 1.0 0.6 0 0.5 1 1.5 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 4 1.0E+00 ID=0.65A 3.5 125°C -40°C IS (A) 3 RDS(ON) (Ω Ω) 25°C 1.0E-01 2.5 1.0E-02 125°C 1.0E-03 2 25°C 1.5 1.0E-04 1 2 4 6 8 10 1.0E-05 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.3.0: July 2013 www.aosmd.com 0.0 0.4 0.8 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 4 AO3460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10 VDS=30V ID=0.65A Ciss 25 6 VDS=0V, VGS=±10V 4 VDS=VGS ID=250µA Capacitance (pF) VGS (Volts) 8 2 20 15 10 Coss 5 0 0.0 0.1 0.2 0.3 0.4 0.5 Crss 0 0.6 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 40 50 60 20 10µs 100µs 1ms 10ms RDS(ON) limited 0.100 0.1s 1s 10s DC 0.010 0.001 0.1 12 8 4 TJ(Max)=150°C TC=25°C 0.01 TJ(Max)=150°C TA=25°C 16 Power (W) 1.000 ID (Amps) 30 VDS (Volts) Figure 8: Capacitance Characteristics 10.000 1 10 100 0 0.0001 VDS (Volts) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev.3.0: July 2013 www.aosmd.com Page 4 of 4