AOD480 30V N-Channel MOSFET 1.4 General Description Features VGStechnology =10V, ID=18A The AOD480 uses advanced trench and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) = 30V ID = 25A (VGS = 10V) RDS(ON) <23 mΩ (VGS = 10V) RDS(ON) <33 mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View TO-252 D-PAK Bottom View D D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Maximum 30 Units V VGS ±20 V TC=25°C Continuous Drain TC=100°C Current G Pulsed Drain Current C ID 25 18 A IDM 64 Avalanche Current C IAR 12 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 7 mJ Gate-Source Voltage Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Maximum Junction-to-Case B Alpha & Omega Semiconductor, Ltd. 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 11 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A 21 PD RθJA RθJC Typ 16.7 40 4.5 °C Max 25 50 7 Units °C/W °C/W °C/W www.aosmd.com AOD480 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 64 Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Reverse Transfer Capacitance Rg Gate resistance 100 nA 2.6 V 18.5 23 26 32 25.4 33 mΩ 1 V 3.2 A A 373 VGS=0V, VDS=0V, f=1MHz µA 2.1 20 VGS=0V, VDS=15V, f=1MHz Units V 0.75 DYNAMIC PARAMETERS Ciss Input Capacitance Crss 1 5 VGS=4.5V, ID=8A Output Capacitance 0.004 TJ=55°C VGS=10V, ID=20A Coss Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ mΩ S 448 pF 67 pF 41 pF 2 2.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.7 7.1 8.6 nC Qg(4.5V) Total Gate Charge 2.7 3.5 4.2 nC VGS=10V, VDS=15V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 8.4 10.5 12.6 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 3.6 4.5 5.4 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 1.2 nC 1.6 nC 4.3 ns 2.8 ns 15.8 ns 3 ns ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current is limited by package. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev3: May. 2011 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD480 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 16 10V 50 6V VDS=5V 12 4.5V ID(A) ID (A) 40 30 20 8 VGS=3.5V 125°C 4 10 25°C 0 0 0 1 2 3 4 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 35 1.8 Normalized On-Resistance VGS=4.5V 30 RDS(ON) (mΩ Ω) 2 25 20 VGS=10V 15 VGS=10V ID=20A 1.6 1.4 VGS=4.5V ID=8A 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 ID=20A 1.0E+00 1.0E-01 40 IS (A) RDS(ON) (mΩ Ω) 50 125°C 125°C 1.0E-02 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25°C 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1.0E-04 25°C FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-05 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 www.aosmd.com AOD480 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 Capacitance (pF) VGS (Volts) 500 VDS=15V ID=20A 8 6 4 2 Ciss 400 300 1.4 200 Coss 494 692 100 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 593 830 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 193 18 100 100 RDS(ON) limited 10µs ID (Amps) 10 100µs DC 1ms 1 TJ(Max)=175°C TC=25°C Power (W) 80 TJ(Max)=175°C TC=25°C 60 40 20 0 0.1 0.1 1 10 100 VDS (Volts) 0.0001 30 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 59 0.1 1 10 142Width (s) Pulse Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=7°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD480 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 Power Dissipation (W) ID(A), Peak Avalanche Current 100 10 20 10 1 1 10 100 0 1000 0 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 25 50 75 100 125 150 TCASE (° °C) Figure 13: Power De-rating (Note B) 50 30 TA=25°C 40 20 Power (W) Current rating ID(A) 175 30 20 10 10 0 0 0 25 50 75 100 125 150 TCASE (° °C) Figure 14: Current De-rating (Note B) 175 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000 www.aosmd.com AOD480 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id Vgs Vgs + Vdd I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com