AOD4140 TM N-Channel SDMOS POWER Transistor General Description Features The AOD4140 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS (V) = 25V ID = 43A RDS(ON) <7mΩ RDS(ON) <14mΩ 100% UIS Tested! 100% Rg Tested! -RoHS Compliant -Halogen Free* TO-252 D-PAK Top View D (V GS = 10V) (V GS = 10V) (V GS = 4.5V) D Bottom View G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain G Current C C Pulsed Forward Diode Current Avalanche Current C Repetitive avalanche energy L=50uH TC=25°C Power Dissipation B C Power Dissipation V Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A B Alpha & Omega Semiconductor, Ltd. 34 IDM ISM 120 120 IAR 35 EAR 61 mJ W 25 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State A 50 PDSM TA=70°C Maximum Junction-to-Case ±20 ID PD TC=100°C TA=25°C A Units V 43 TC=100°C Pulsed Drain Current Maximum 25 RθJA RθJC Typ 14.2 39 2.5 °C Max 20 50 3 Units °C/W °C/W °C/W www.aosmd.com AOD4140 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA ID(ON) On state drain current 50 1 VGS=10V, VDS=5V TJ=125°C VGS=4.5V, ID=20A 100 nA 3 V 5.7 7 8.6 10.5 11 14 A gFS Forward Transconductance VDS=5V, ID=30A 50 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance µA 2 120 VGS=10V, ID=30A Units V 10 TJ=55°C Static Drain-Source On-Resistance Max 25 VDS=25V, VGS=0V IDSS RDS(ON) Typ mΩ mΩ S 1 V 55 A 990 1180 1450 pF 210 275 350 pF 125 175 245 pF 1.1 1.7 2.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 18 21.7 26 nC Qg(4.5V) Total Gate Charge 9 11 13 nC 3 4 5 nC 4.5 6.4 9 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=30A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=30A, dI/dt=500A/µs 8.5 10.6 13 Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs 13 16 19 VGS=10V, VDS=12.5V, RL=0.42Ω, RGEN=3Ω 6.8 ns 13.8 ns 21.5 ns 8.7 ns ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Rev 1 : Oct 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4140 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 5V VDS=5V 6V 80 80 4.5V 7V 60 ID(A) ID (A) 60 4V 40 40 VGS=3.5V 20 125°C 20 25°C 0 0 0 1 2 3 4 0 5 1 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 18 2 14 Normalized On-Resistance 16 RDS(ON) (mΩ ) 2 VGS=4.5V 12 10 8 VGS=10V 6 4 2 1.8 VGS=10V ID=30A 1.6 17 5 2 VGS=4.5V10 1.4 1.2 ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18 Temperature 30 1.0E+02 ID=30A 1.0E+01 25 40 1.0E+00 IS (A) RDS(ON) (mΩ ) 20 125°C 15 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 10 25°C 1.0E-04 5 1.0E-05 0 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD4140 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1800 10 1400 Capacitance (pF) 8 VGS (Volts) 1600 VDS=12.5V ID=30A 6 4 Ciss 1200 1000 800 600 Coss 400 2 200 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 0 25 RDS(ON) limited 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 10.0 100µs 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 0.1 160 10µs Power (W) 10µs 100.0 ID (Amps) 5 25 200 1000.0 TJ(Max)=150°C TC=25°C 17 5 2 10 120 80 40 1 VDS (Volts) 10 100 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance Crss 0 0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4140 70 60 60 50 50 Power Dissipation (W) ID(A), Peak Avalanche Current TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS TA=25°C 40 TA=100°C 30 20 10 30 20 10 TA=125°C TA=150°C 40 0 0 0.000001 0.00001 0.0001 0 0.001 25 75 100 125 150 175 10000 50 TA=25°C 40 1000 Power (W) Current rating ID(A) 50 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 30 20 17 5 2 10 100 10 10 1 0 0 25 50 75 100 125 150 0 175 Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0 0 0.01 0.1 1 10 100 1000 0 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4140 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 16 12 di/dt=800A/us 25 125ºC 3 14 10 di/dt=800A/us 2.5 125ºC 12 6 Qrr 10 125ºC trr (ns) 25ºC 15 Irm 25ºC 2 15 20 25 1 S 0.5 25ºC 0 30 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 1.5 125ºC 2 0 10 25ºC 6 4 0 5 trr 8 4 5 0 2 10 S 8 Irm (A) Qrr (nC) 20 5 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 15 10 2.5 Is=20A Is=20A 125ºC 20 125ºC 12 8 2 Qrr 10 9 1.5 25ºC S 6 trr (ns) 25ºC 15 Irm (A) Qrr (nC) trr 125º 6 125º 4 25ºC 2 3 0 1000 0 1 S 5 Irm 0 0 200 400 600 800 µs) di/dt (A/µ Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 0.5 25ºC 0 200 400 600 800 0 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com AOD4140 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com