AOD452A TM N-Channel SDMOS POWER Transistor General Description Features The AOD452A/L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. AOD452A and AOD452AL are electrically identical. VDS (V) = 25V ID = 55A RDS(ON) < 8mΩ RDS(ON) <14mΩ -RoHS Compliant -AOD452AL is Halogen Free TO-252 D-PAK Top View D 100% UIS Tested! 100% Rg Tested! Bottom View D G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG TC=25°C C Pulsed Forward Diode CurrentC Avalanche Current C Repetitive avalanche energy L=50µH C TC=25°C Power Dissipation B Power Dissipation ±20 V 43 120 ISM 120 IAR 35 EAR 31 Junction and Storage Temperature Range A Maximum Junction-to-TAB B Alpha & Omega Semiconductor, Ltd. Steady-State W 2.5 W 1.6 TJ, TSTG t ≤ 10s Steady-State Steady-State mJ 25 -55 to 175 °C RθJC Typ 14.2 39 2.5 Max 20 50 3 Units °C/W °C/W °C/W RθJC-TAB 2.7 3.2 °C/W Symbol A A 50 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case B Units V ID IDM PD TC=100°C TA=25°C A Maximum 25 55 TC=100°C Pulsed Drain Current (V GS = 10V) (V GS = 10V) (V GS = 4.5V) RθJA www.aosmd.com AOD452A Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V 10 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 120 RDS(ON) Static Drain-Source On-Resistance TJ=55°C 50 VGS=10V, ID=30A TJ=125°C VGS=4.5V, ID=20A Forward Transconductance VSD IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=30A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time Units V VDS=25V, VGS=0V Zero Gate Voltage Drain Current gFS Max 25 IDSS IS Typ VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=30A 2 µA 100 nA 3 V A 6 8 8.6 12 11.5 14 mΩ 1 V 55 A mΩ 50 0.7 S 990 1180 1450 pF 210 275 350 pF 125 175 245 pF 1.1 1.7 2.5 Ω 18 21.7 26 nC 9 11 13 nC 3 4 5 nC 6.4 9 nC 4.5 VGS=10V, VDS=12.5V, RL=0.42Ω, RGEN=3Ω 6.8 ns 13.8 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=30A, dI/dt=500A/µs 8.4 10.6 Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs 13 16 21.5 ns 8.7 ns 13 20 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev0 : July 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD452A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 5V VDS=5V 6V 80 80 4.5V 7V 60 ID(A) ID (A) 60 4V 40 40 VGS=3.5V 20 125°C 20 25°C 0 0 0 1 2 3 4 0 5 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 18 2 RDS(ON) (mΩ) 14 Normalized On-Resistance 16 VGS=4.5V 12 10 8 VGS=10V 6 4 2 1.8 VGS=10V ID=30A 1.6 17 5 2 10 1.4 1.2 VGS=4.5V ID=20A 1 0 0 5 0.8 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 0 200 Temperature (°C) 18 Figure 4: On-Resistance vs. Junction Temperature 30 1.0E+02 ID=30A 1.0E+01 25 40 1.0E+00 IS (A) RDS(ON) (mΩ) 20 125°C 15 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 10 25°C 1.0E-04 5 1.0E-05 0 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD452A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1800 1400 Capacitance (pF) VGS (Volts) 1600 VDS=12.5V ID=30A 8 6 4 Ciss 1200 1000 800 600 Coss 400 2 200 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 25 0 RDS(ON) limited 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 10.0 100µs 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 25 TJ(Max)=175°C TA=25°C 17 5 2 10 120 80 40 1 VDS (Volts) 10 100 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 160 10µs Power (W) 10µs 100.0 ID (Amps) 5 200 1000.0 ZθJC Normalized Transient Thermal Resistance Crss 0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 1 PD 0.1 Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD452A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 50 Power Dissipation (W) ID(A), Peak Avalanche Current 70 TA=25°C 40 TA=100°C 30 20 10 TA=125°C TA=150°C 50 40 30 20 10 0 0 0.000001 0.00001 0.0001 0 0.001 25 50 75 100 125 175 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 150 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 30 20 17 5 2 10 100 10 10 1 0 0 25 50 75 100 125 150 0 175 ZθJA Normalized Transient Thermal Resistance 10 1 0 0 0.01 0.1 1 10 100 1000 0 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 40 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD452A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS di/dt=800A/us 25 125ºC 125ºC Irm 5 trr (ns) Qrr 10 6 4 25ºC 2 10 15 20 8 25 S Irm 0 200 400 600 800 8 12 20 25 30 2.5 Is=20A 125ºC 9 2 1.5 25ºC 125º 6 2 3 0 1000 0 di/dt (A/µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 15 4 25ºC 0 10 6 125ºC 5 15 S Qrr 10 10 trr 25ºC 15 5 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current trr (ns) Qrr (nC) 125ºC 0.5 25ºC 0 0 Irm (A) Is=20A 1 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 20 1.5 125ºC 6 30 25 25ºC 2 0 5 trr 4 0 0 2 10 Irm (A) Qrr (nC) 15 2.5 125ºC 12 8 25ºC di/dt=800A/us 14 10 20 3 16 12 S 30 1 S 0.5 25ºC 0 200 400 600 800 0 1000 di/dt (A/µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com AOD452A Gate Charge Test Circuit & W aveform Vgs Qg 10V + VDC + Vds - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs Rg 90% + Vdd DUT VDC - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + Vdd VDC - IF t rr dI/dt I RM Vds Vdd www.aosmd.com