AOSMD AOT20N25

AOT20N25
250V,20A N-Channel MOSFET
General Description
Product Summary
The AOT20N25 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
300V@150℃
20A
RDS(ON) (at VGS=10V)
< 0.17Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT20N25L
Top View
D
TO-220
G
D
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
AOT20N25
250
Units
V
±30
V
20
ID
14
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAS
4.5
A
Single pulsed avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
EAS
dv/dt
608
5
208
mJ
V/ns
W
1.7
-55 to 150
W/ oC
°C
300
°C
AOT20N25
65
Units
°C/W
0.5
0.6
°C/W
°C/W
Maximum Case-to-sink A
Maximum Junction-to-Case
Rev0: Oct 2011
51
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
RθJC
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Page 1 of 5
AOT20N25
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
250
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
ID=250µA, VGS=0V, TJ=150°C
300
V
ID=250µA, VGS=0V
0.25
V/ oC
VDS=250V, VGS=0V
1
VDS=200V, TJ=125°C
10
±100
3.2
µA
3.8
4.5
nΑ
V
0.17
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=10A
0.14
gFS
Forward Transconductance
VDS=40V, ID=10A
16
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
20
A
ISM
Maximum Body-Diode Pulsed Current
51
A
0.72
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=200V, ID=20A
1.9
S
1028
pF
167
pF
11
pF
3.9
5.9
20
25
Ω
nC
5.7
nC
Gate Drain Charge
8
nC
Turn-On DelayTime
27
ns
31
ns
VGS=10V, VDS=125V, ID=20A,
RG=25Ω
70
ns
25
ns
IF=20A,dI/dt=100A/µs,VDS=100V
179
Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/µs,VDS=100V
1.6
ns
µC
Body Diode Reverse Recovery Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.5A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Oct 2011
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Page 2 of 5
AOT20N25
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
30
VDS=40V
10V
25
-55°C
6.5V
ID(A)
ID (A)
125°C
10
20
15
6V
10
1
25°C
5
VGS=5.5V
0
0.1
0
5
10
15
20
25
30
2
4
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
0.30
Normalized On-Resistance
3
0.25
VGS=10V
RDS(ON) (Ω
Ω)
10
0.20
0.15
0.10
0.05
VGS=10V
ID=10A
2.5
2
1.5
1
0.5
0
0.00
0
5
10
15
20
-100
25
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1E+02
40
125°C
1E+00
IS (A)
BVDSS (Normalized)
1E+01
1.1
1
1E-01
25°C
1E-02
0.9
1E-03
0.8
1E-04
-100
50
100
150
200
TJ (°
°C)
Figure 5:Break Down vs. Junction Temparature
Rev0: Oct 2011
-50
0
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0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
1.0
Page 3 of 5
AOT20N25
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=200V
ID=20A
Ciss
1000
Capacitance (pF)
VGS (Volts)
12
9
6
100
Coss
10
Crss
3
1
0
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
35
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100
25
20
10
ID (Amps)
Current rating ID(A)
10µs
15
10
RDS(ON)
limited
100µs
1ms
DC
1
10ms
0.1
TJ(Max)=150°C
5
0.01
0
0
25
50
75
100
125
TCASE (°C)
Figure 9: Current De-rating (Note B)
150
0.1
1
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOT20N25 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
T
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT20N25 (Note F)
Rev0: Oct 2011
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Page 4 of 5
AOT20N25
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev0: Oct 2011
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 5 of 5