AOK22N50

AOK22N50
500V,22A N-Channel MOSFET
General Description
Product Summary
The AOK22N50 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
600V@150℃
22A
RDS(ON) (at VGS=10V)
< 0.26Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOK22N50L
Top View
D
TO-247
G
S
G
S
D
AOK22N50
Orderable Part Number
Package Type
AOK22N50L
TO-247 Green
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
TC=100°C
Pulsed Drain Current
Avalanche Current
C
Minimum Order Quantity
Tube
240
AOK22N50
500
Units
V
±30
V
22
ID
15
IDM
C
Form
A
88
IAR
7
A
EAR
735
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
B
o
Power Dissipation
Derate above 25 C
EAS
dv/dt
1470
5
417
mJ
V/ns
W
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
A,D
Maximum Junction-to-Ambient
Maximum Case-to-sink A
Maximum Junction-to-Case
TJ, TSTG
3.3
-55 to 150
W/ oC
°C
300
°C
AOK22N50
40
0.5
0.3
Units
°C/W
°C/W
°C/W
Repetitive avalanche energy
Rev1: April 2014
C
PD
TL
Symbol
RθJA
RθCS
RθJC
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Page 1 of 5
AOK22N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
500
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
600
V
ID=250µA, VGS=0V
0.57
V/ oC
VDS=500V, VGS=0V
1
VDS=400V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=11A
gFS
Forward Transconductance
VDS=40V, ID=11A
25
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
ISM
±100
µA
4
4.5
nΑ
V
0.21
0.26
Ω
1
V
Maximum Body-Diode Continuous Current
22
A
Maximum Body-Diode Pulsed Current
88
A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
Qgd
Gate Drain Charge
S
2465
3086
3710
pF
VGS=0V, VDS=25V, f=1MHz
200
290
380
pF
14
24
35
pF
VGS=0V, VDS=0V, f=1MHz
0.7
1.4
2.1
Ω
55
69
83
nC
17
22
27
nC
12
24
36
nC
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
3.4
VGS=10V, VDS=400V, ID=22A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=22A,dI/dt=100A/µs,VDS=100V
415
524
630
Qrr
Body Diode Reverse Recovery Charge IF=22A,dI/dt=100A/µs,VDS=100V
7.5
9.6
12
Body Diode Reverse Recovery Time
VGS=10V, VDS=250V, ID=22A,
RG=25Ω
60
ns
122
ns
124
ns
77
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=7A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: April 2014
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Page 2 of 5
AOK22N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
40
VDS=40V
10V
30
6.5V
20
-55°C
ID(A)
ID (A)
10
6V
125°C
1
10
VGS=5.5V
25°C
0
0
5
10
15
20
25
0.1
30
0
2
0.4
6
8
10
Normalized On-Resistance
3
0.3
RDS(ON) (Ω)
4
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=10V
0.2
0.1
5
10
15
20
2
1.5
1
0.5
0
-100
0.0
0
VGS=10V
ID=11A
2.5
25
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.0E+02
40
1.0E+00
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
125°C
1.0E-01
1.0E-02
25°C
0.9
1.0E-03
0.8
-100
1.0E-04
-50
0
50
100
150
200
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
Rev1: April 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AOK22N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
Ciss
VDS=400V
ID=22A
Capacitance (pF)
VGS (Volts)
12
9
6
1000
Coss
Crss
100
3
0
10
0
20
40
60
80
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
0.1
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
25
10µs
RDS(ON)
limited
20
100µs
10
1ms
ID (Amps)
Current rating ID(A)
100
15
10
10ms
1
DC
0.1
5
TJ(Max)=150°C
TC=25°C
0
0.01
0
25
50
75
100
125
150
TCASE (°C)
Figure 9: Current De-rating (Note B)
1
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOK22N50 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PPDD
0.01
TTonon
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
TT
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOK22N50 (Note F)
Rev1: April 2014
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Page 4 of 5
AOK22N50
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev1: April 2014
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 5 of 5