AOT5N60 600V,5A N-Channel MOSFET General Description Product Summary The AOT5N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 5A RDS(ON) (at VGS=10V) <1.8Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT5N60L Top View D TO-220 G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C Maximum 600 Units V ±30 V 5 ID 3.4 A Pulsed Drain Current C IDM 16 Avalanche Current C IAR 2.6 A Repetitive avalanche energy C EAR 100 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 200 5 132 mJ V/ns W 1.05 -55 to 150 W/ oC °C 300 °C Maximum Case-to-sink A Maximum Junction-to-Case Rev4: July 2010 PD TJ, TSTG TL Symbol RθJA RθCS Typical 54 Maximum 65 Units °C/W 0.76 0.5 0.95 °C/W °C/W RθJC www.aosmd.com Page 1 of 5 AOT5N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=5V ID=250µA VGS(th) ID=250µA, VGS=0V, TJ=150°C V 700 ID=250µA, VGS=0V V/ oC 0.65 VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 ±100 3 µA 3.9 4.5 nΑ V 1.8 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.5A 1.44 gFS Forward Transconductance VDS=40V, ID=2.5A 7.7 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 S IS Maximum Body-Diode Continuous Current 5 A ISM Maximum Body-Diode Pulsed Current 16 A pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=480V, ID=5A VGS=10V, VDS=300V, ID=5A, RG=25Ω IF=5A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V 466 583 700 46 58.4 70 pF 4.2 5.3 6.5 pF 2.9 3.7 5.6 Ω 16.8 20 nC 3.1 4 nC 8.5 11 nC 21 25 ns 44 55 ns 35 45 ns 37 45 ns 208 250 2.0 2.4 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=60mH, IAS=2.6A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev4: July 2010 www.aosmd.com Page 2 of 5 AOT5N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 100 10V VDS=40V 6.5V 8 -55°C 10 ID (A) 6 ID(A) 6V 125°C 4 1 2 25°C VGS=5.5V 0 0.1 0 5 10 15 20 25 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 3.0 8 10 Normalized On-Resistance 2.5 2.5 RDS(ON) (Ω ) 6 VGS(Volts) Figure 2: Transfer Characteristics VGS=10V 2.0 1.5 VGS=10V ID=2.5A 2 1.5 1 0.5 1.0 0 2 4 6 8 10 0 12 -100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.2 40 125°C 1.0E-01 IS (A) BVDSS (Normalized) 1.0E+00 1.1 1 1.0E-02 25°C 1.0E-03 0.9 1.0E-04 0.8 1.0E-05 -100 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature Rev4: July 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AOT5N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VDS=480V ID=5A 12 Ciss Capacitance (pF) VGS (Volts) 1000 9 6 Coss 100 Crss 10 3 0 1 0 5 10 15 20 25 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics 0 25 Qg (nC) Figure 7: Gate-Charge Characteristics 100 100 6 10µs RDS(ON) limited 1 100µs 1ms DC TJ(Max)=150°C TC=25°C 0.1 10ms 5 Current rating ID(A) 10 ID (Amps) 1 4 3 2 1 0.01 1 10 100 1000 VDS (Volts) 0 Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.95°C/W 50 75 100 125 150 TCASE (°C) Figure 10: Current De-rating (Note B) Figure 9: Maximum Forward Biased Safe Operating Area for AOT5N60 (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD Single Pulse 0.1 Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT5N60 (Note F) Rev4: July 2010 www.aosmd.com Page 4 of 5 AOT5N60 AOT5N60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev4: July 2010 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 5 of 5